×

Method of manufacturing a closed cell trench MOSFET

  • US 20050148128A1
  • Filed: 01/20/2005
  • Published: 07/07/2005
  • Est. Priority Date: 12/02/2003
  • Status: Active Grant
First Claim
Patent Images

1. A method of fabrication a closed cell trench metal-oxide-semiconductor field effect transistor (TMOSFET) comprising:

  • depositing a first semiconductor layer upon a substrate, wherein said first semiconductor layer is doped with a first type of impurity;

    etching a plurality of trenches in said first semiconductor layer, wherein a first set of said plurality of trenches are substantially parallel with respect to each other and a second set of said plurality of trenches are substantially normal-to-parallel with respect to said first set of said plurality of trenches;

    forming a dielectric proximate said plurality of trenches;

    doping said first semiconductor layer proximate the bottoms of said first set of said plurality of trenches;

    depositing a second semiconductor layer in said plurality of trenches;

    doping a first portion of said first semiconductor layer with a second type of impurity; and

    doping a second portion of said first semiconductor layer proximate said dielectric with said first type of impurity.

View all claims
  • 3 Assignments
Timeline View
Assignment View
    ×
    ×