High temperature environment tool system and method

• US 20050150691A1
• Filed: 11/18/2004
• Published: 07/14/2005
• Est. Priority Date: 11/18/2003
• Status: Active Grant

• Current Assignee: Halliburton Energy Services Incorporated (Halliburton Company)
• Original Assignee: Halliburton Energy Services Incorporated (Halliburton Company)
• Inventors: Schultz, Roger L., Rodney, Paul F., Freeman, James J.
• Granted Patent: US 7,017,662 B2
• Time in Patent Office: Days
• US Class Current: 175/57
• CPC Class Codes: B81B 2207/115 Protective layers applied directly to the device before packaging
• CPC Class Codes: E21B 47/002 by visual inspection
• CPC Class Codes: E21B 47/017 Protecting measuring instruments
• CPC Class Codes: E21B 47/0175 Cooling arrangements
• CPC Class Codes: G01V 1/40 specially adapted for well-logging
• CPC Class Codes: H01L 21/86 the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/73204 the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 2224/73253 Bump and layer connectors
• CPC Class Codes: H01L 23/3157 Partial encapsulation or coating mask layer used as insulation layer H01L21/31
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/3011 Impedance

Abstract

In at least some embodiments, a tool may comprise a tool body and one or more tool components. The tool may further comprise tool electronics located within the tool body, wherein the tool electronics are operable to sense and store tool component characteristics and environmental characteristics. At least some of the tool electronics are operable, at least for one week, when exposed to temperatures of at least 200 Celsius. The tool electronics may be integrated circuits formed on a silicon carbide substrate or a silicon on sapphire substrate. One illustrative embodiment of the tool is a drill bit for employment in a high temperature drill well.

Claims

1. A tool, comprising:

a tool body; and

tool electronics located within the tool body,

wherein the tool electronics comprise an integrated circuit formed on a substrate from a group consisting of silicon carbide substrates and sapphire substrates.

2. The tool of claim 1, wherein the tool electronics are configured to sense at least one tool component characteristic.

3. The tool of claim 1, wherein the tool electronics are configured to sense a characteristic of the tool environment.

4. The tool of claim 3, wherein the tool is a logging while drilling tool.

5. The tool of claim 3, wherein the tool is a wireline logging tool.

6. The tool of claim 3, wherein the tool is downhole, long-term well monitoring tool.

7. The tool of claim 3, wherein the tool is configured to transmit the sensed characteristic to a tool operator interface that is remotely located with respect to a location of the tool.

8. The tool of claim 1 wherein the integrated circuit is designed to maintain current densities in metal interconnects below about 10⁴ A/cm².

9. The tool of claim 1 wherein the integrated circuit is selected from the set consisting of analog-to-digital converters, digital-to-analog converters, operational amplifiers, digital logic gates, voltage references, oscillators, anti-fuse memories, state machines, floating poly-to-poly memories, microprocessors, micro electromechanical systems (MEMS), tag sensors, DC/DC voltage converters, digital memory, analog memory, processors, on-chip transformers, on-chip inductors, on-chip capacitors, on-chip resistors, programmable logic devices (PLDs), mixers, switches, and charge pumps.

10. The tool of claim 1, further comprising:

a rotating base; and

cutters mounted in the rotating base.

11. The tool of claim 10 wherein the substrate is mounted near at least one of the cutters, wherein the integrated circuit is configured to detect at least one characteristic in a group consisting of tool component characteristics and environmental characteristics, and wherein the integrated circuit is operable at temperatures in excess of 200 Celsius.

12. The tool of claim 1 wherein the tool electronics comprise:

a hybrid circuit that having multiple silicon on sapphire (SOS) dies, with each die being limited to a size limit calculated to optimize cost of the hybrid circuit,

wherein each die carries an integrated circuit that is a partitioned portion of a larger integrated circuit, and

wherein the hybrid circuit is operable when in temperature environments of at least 200 Celsius.

13. The tool of claim 1 wherein the tool electronics comprise a micro electromechanical system (MEMS) structure on the substrate.

14. The tool of claim 13 wherein the MEMS is configured to operate as a sensor selected from a group consisting of accelerometers, pressure sensors, gyros, temperature sensors, and thermal arrays.

15. The tool of claim 1 wherein the tool electronics comprise:

multiple integrated circuits disposed within a multi-chip module; and

a Peltier cooler disposed within the multi-chip module and configured to intermittently cool at least one of the multiple integrated circuits.

16. A tool, comprising:

a tool body;

tool electronics located within the tool body, wherein the tool electronics are operable to sense at least one characteristic from a group consisting of tool component characteristics and environmental characteristics, and are further operable to transmit the sensed characteristic to a tool operator interface remotely located with respect to a location of the tool,

wherein at least some of the tool electronics are operable when exposed to temperatures of at least 200 Celsius.

17. The tool of claim 16 wherein the tool electronics comprise an integrated circuit formed on at least one of a silicon carbide substrate and a sapphire substrate.

18. The tool of claim 17 wherein the integrated circuit employs a seal ring that prevents metallic corrosion.

19. The tool of claim 17 wherein the integrated circuit is designed to maintain current densities in metal interconnects below a predetermined limit.

20. The tool of claim 19, wherein the predetermined limit is between 5×

10³ and 5×

10⁴ A/cm².

21. The tool of claim 17 wherein the integrated circuit is covered by a passivation layer thicker than about 2 microns.

22. The tool of claim 17 wherein the integrated circuit is selected from the set of circuits consisting of analog-to-digital converters, digital-to-analog converters, operational amplifiers, digital logic gates, voltage references, oscillators, anti-fuse memories, state machines, floating poly-to-poly memories, microprocessors, micro electromechanical systems (MEMS), tag sensors, DC/DC voltage converters, digital memory, analog memory, processors, on-chip transformers, on-chip inductors, on-chip capacitors, on-chip resistors, programmable logic devices (PLDs), mixers, switches, and charge pumps.

23. The tool of claim 17 wherein the integrated circuit is configured to operate at a clock frequency in excess of about 100 MHz.

24. The tool of claim 17 further comprising:

a rotating base; and

cutters mounted in the rotating base.

25. The tool of claim 24 wherein the tool electronics comprise an electronic device mounted near at least one of the cutters and configured to detect said characteristic, wherein the electronic device is operable when exposed to temperatures of at least 200 Celsius.

26. The tool of claim 16 wherein the tool electronics comprise:

a hybrid circuit that includes multiple silicon on sapphire (SOS) dies, with each die being limited to a size limit calculated to optimize cost of the hybrid circuit,

wherein each die carries an integrated circuit that is a partitioned portion of a larger integrated circuit, and

wherein the hybrid circuit is operable when exposed to temperatures of at least 200 Celsius.

27. The tool of claim 16 wherein the tool electronics comprise:

multiple integrated circuits disposed within a multi-chip module; and

a Peltier cooler disposed within the multi-chip module and configured to intermittently cool a subset of the multiple integrated circuits.

28. A method, comprising:

positioning a tool in a high temperature environment having a temperature greater than 185 Celsius; and

sensing a parameter value using an integrated circuit formed on a substrate from the group consisting of silicon carbide substrates and sapphire substrates.

29. The method of claim 28, wherein the parameter is indicative of tool performance.

30. The method of claim 28 further comprising removing the tool from the high temperature environment if the parameter value indicates that performance of the tool is below a threshold value.

31. The method of claim 28 further comprising maintaining the tool in the high temperature environment for at least one week.

32. The method of claim 28 further comprising storing the parameter values using an integrated circuit formed on the substrate.

33. The method of claim 28 further comprising transmitting the parameter values to a tool operator interface positioned in a remote location with respect to the tool.

34. The method of claim 28 wherein the parameter is selected from a group of parameters consisting of:

acceleration, pressure, rotation, vibration and temperature.

35. The method of claim 28, wherein the parameter is indicative of a property of a fluid in contact with the tool.

36. The method of claim 28, wherein the parameter is indicative of a property of a formation penetrated by the tool.

37. A micro electromechanical system (MEMS), comprising:

a deformable element; and

a support circuit coupled to the deformable element,

wherein the deformable element component and the support circuit are formed on a substrate from a group consisting of silicon carbide substrates and sapphire substrates.

38. The MEMS of claim 37, wherein the MEMS is operable when exposed to temperatures of at least 200 Celsius.

39. The MEMS of claim 37 further comprising a thick passivation layer that covers the support circuit.

40. The MEMS of claim 39, wherein the passivation layer has a thickness greater than 2 microns.

41. The MEMS of claim 37 wherein the MEMS is configured, at least in part, to operate as a sensor selected from the group consisting of accelerometers, pressure sensors, gyros, temperature sensors, and thermal arrays.

42. The MEMS of claim 37 wherein the MEMS is attached to a drill bit that is configured to operate in a drill well in temperatures of at least 200 Celsius.

43. The MEMS of claim 37, wherein the substrate is a sapphire substrate.

44. The MEMS of claim 37, wherein the substrate is a silicon carbide substrate.

45. The MEMS of claim 37, wherein the deformable element is fabricated from the substrate material.

46. The MEMS of claim 37, further comprising electrodes having a capacitance that varies when the deformable element deforms.

47. The MEMS of claim 37, further comprising a piezoresistive or piezoelectric element to detect changes in the deformable element.

48. The MEMS of claim 37, wherein the support circuit determines acceleration from deformation of the deformable element.

49. The MEMS of claim 37, wherein the support circuit determines pressure from deformation of the deformable element.

50. The MEMS of claim 37, wherein the support circuit determines orientation from deformation of the deformable element.

51. The MEMS of claim 37, wherein the support circuit determines temperature from deformation of the deformable element.

52. A well control method comprising:

positioning a device in a well bore, said device having a control circuit fabricated on a substrate from the group consisting of silicon carbide substrates and sapphire substrates; and

operating the device in the well bore to regulate a fluid flow.

53. The method of claim 52, wherein the device controls injection of a fluid.

54. The method of claim 52, wherein the device controls a heating rate.

55. The method of claim 52, wherein the device controls production of a fluid.