Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor
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Accused Products
Abstract
Components of semiconductor processing apparatus comprise thermal sprayed yttria-containing coatings that provide erosion, corrosion and/or corrosion-erosion resistance in plasma atmospheres. The coatings can protect substrates from physical and/or chemical attack.
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Citations
34 Claims
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1. (canceled)
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- 16. A process of manufacturing a component of a semiconductor processing apparatus, comprising applying a coating consisting essentially of yttria over a surface of a substrate by thermal spraying, the coating comprising an outermost surface of the component.
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20. A process of etching a semiconductor substrate, comprising:
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placing a semiconductor substrate in a chamber of a plasma etch reactor, the plasma etch reactor comprising at least one component including a substrate having a surface and a thermal sprayed coating consisting essentially of yttria disposed over the surface, the coating including an outermost surface of the component;
introducing a process gas into the chamber;
generating a plasma from the process gas; and
etching the semiconductor substrate with the plasma, wherein the coating is exposed to the plasma during the etching. - View Dependent Claims (21, 22, 23, 24)
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25. A process of reducing contamination of a semiconductor wafer by erosion of a component in a chamber of a plasma etch reactor during etching of the semiconductor wafer in the plasma etch reactor, comprising:
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placing a semiconductor wafer in a chamber of a plasma etch reactor, the plasma etch reactor comprising at least one component including a substrate comprised of a material and having a surface and a thermal sprayed coating consisting essentially of yttria disposed over the surface, the coating including an outermost surface of the component;
introducing a process gas into the chamber, the process gas being erosive with respect to the substrate material;
generating a plasma from the process gas; and
etching the semiconductor wafer with the plasma while exposing the coating to the plasma, wherein the coating minimizes contamination of the semiconductor wafer by the substrate material and yttria during the etching. - View Dependent Claims (26, 27, 28, 29, 30, 31, 32, 33, 34)
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Specification