Method and device for laser beam processing of silicon substrate, and method and device for laser beam cutting of silicon wiring

• US 20050150877A1
• Filed: 01/24/2005
• Published: 07/14/2005
• Est. Priority Date: 07/29/2002
• Status: Abandoned Application

• Current Assignee: Sumitomo Precision Products Company Limited (Sumitomo Corporation)
• Original Assignee: Sumitomo Precision Products Company Limited (Sumitomo Corporation)
• Inventors: Araki, Ryuta
• Application Number:
  US11/042,363
• Publication Number:
  US 20050150877A1
• Time in Patent Office: Days
• US Class Current: 219/121.670
• CPC Class Codes: B23K 2101/40 Semiconductor devices
• CPC Class Codes: B23K 2103/50 Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
• CPC Class Codes: B23K 26/40 taking account of the properties of the material involved

Abstract

(1) A laser processing method for silicon substrates wherein a roughness (Ra) of a surface of a silicon substrate is adjusted to 0.05 micron-1 micron after which a laser is applied. (2) A laser processing device for silicon substrates including: means for adjusting a surface of a silicon substrate to 0.05 micron-1 micron; and means for applying a laser. This method and device is able to prevent spattering of melted silicon and provides superior processing precision and allows efficient formation of holes and cutting on a silicon substrate. In particular, the present invention is useful for opening short-circuit sections disposed in silicon wiring.

Claims

1. A laser processing method for silicon substrates comprising the steps of:

adjusting a roughness (Ra) of a surface of a silicon substrate to 0.05 micron-1 micron; and

applying a laser beam on the surface of the silicon substrate.

2. A laser processing device for silicon substrates comprising:

means for adjusting a roughness of a surface of a silicon substrate to 0.05 micron-1 micron; and

means for applying a laser beam on the surface of the silicon substrate.

3. A method for cutting silicon wiring with a laser comprising the steps of:

adjusting a roughness of a surface of a silicon substrate to 0.05 micron-1 micron; and

applying a laser beam on the surface of the silicon substrate.

4. A device for cutting silicon wiring with a laser comprising:

means for adjusting a roughness of a surface of a silicon substrate to 0.05 micron-1 micron; and

means for applying a laser beam on surface of the silicon substrate.

5. A method of processing holes with a laser comprising the steps of:

adjusting a roughness of a surface of a silicon to 0.05 micron-1 micron; and

applying a laser beam on the surface of the silicon substrate.

6. A device for processing holes with a laser comprising:

means for adjusting a roughness of a surface of a silicon to 0.05 micron-1 micron; and

means for applying a laser beam on the surface of the silicon substrate.

7. A mass balancing adjusting method for silicon comprising:

adjusting a roughness of a surface of a silicon to 0.05 micron-1 micron; and

applying a laser beam on the surface of the silicon substrate.

8. A mass balancing adjusting device for silicon comprising:

means for adjusting a roughness of a surface of a silicon substrate to 0.05 micron-1 micron; and

means for applying a laser beam on the surface of the silicon substrate.

9. A laser processing method for an oscillating gyroscope comprising:

adjusting a roughness of a surface of an oscillating gyroscope having silicon material to 0.05 micron-1 micron; and

applying a laser beam on the surface of the oscillating gyroscope.

10. A laser processing device for an oscillating gyroscope comprising:

means for adjusting a roughness of a surface of an oscillating gyroscope having silicon material to 0.05 micron-1 micron; and

means for applying a laser beam on the surface of the oscillating gyroscope.

11. A laser processing method comprising:

providing indentations and projections of between 0.05 micron and 1 micron on a surface of a silicon substrate; and

applying a laser beam on the surface of the silicon substrate.

12. The laser processing method according to claim 11, wherein the indentations and projections on the silicon substrate surface are more preferably adjusted to within a range of 0.1 micron to 0.5 micron.

13. The laser processing method according to claim 11, wherein the roughness is provided on the surface of the silicon substrate by patterning using photolithography technology.

14. The laser processing method according to claim 11, wherein the roughness is provided on the surface of the silicon substrate by plasma etching.

15. The laser processing method according to claim 11, wherein the roughness is provided on the surface of the silicon substrate by single-ion beam technology.

16. The laser processing method according to claim 11, wherein the roughness is provided on the surface of the silicon substrate by surface grinding technology.

17. The laser processing method according to claim 11, wherein the roughness is provided on the surface of the silicon substrate by inkjet system.

18. The laser processing method according to claim 11, wherein the laser beam is applied to cutting silicon wirings on the silicon substrate surface.

19. The laser processing method according to claim 11, wherein the laser beam is applied to cutting holes in the silicon substrate surface.

20. The laser processing method according to claim 11, wherein the laser beam is applied to cut holes in the silicon substrate to balance the mass of the silicon substrate, where the silicon substrate is part of a oscillating gyroscope.