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Semiconductor chip and manufacturing method for the same, and semiconductor device

  • US 20050151228A1
  • Filed: 12/06/2004
  • Published: 07/14/2005
  • Est. Priority Date: 12/04/2003
  • Status: Active Grant
First Claim
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1. A semiconductor chip manufacturing method comprising the steps of:

  • forming a concave portion extending in the thickness direction of a semiconductor substrate that has a front surface and a rear surface and has a function device formed on the front surface, from the front surface;

    forming an oxidation preventive film made of an inert first metal material by supplying the first metal material onto the inner wall surface of the concave portion;

    supplying a second metal material containing a metal that is oxidized more easily than the first metal material into the concave portion after the step of forming the oxidation preventive film;

    electrically connecting the second metal material supplied into the concave portion and the function device; and

    thinning the semiconductor substrate, so that the thickness thereof becomes thinner than the depth of the concave portion by removing the semiconductor substrate from the rear surface while leaving the oxidation preventive film, the concave portion is formed into a through hole penetrating the semiconductor substrate in the thickness direction, and the second metal material disposed inside the concave portion is formed into a penetrating electrode that electrically connects the front surface side and the rear surface side of the semiconductor substrate and a rear side protruding electrode protruding from the rear surface side of the semiconductor substrate.

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