Magnetoresistive device, magnetoresistive head and magnetic recording-reproducing apparatus
0 Assignments
0 Petitions
Accused Products
Abstract
A magnetoresistive device includes a magnetization pinned layer, a magnetization free layer, a nonmagnetic intermediate layer formed between the magnetization pinned layer and the magnetization free layer, and electrodes allowing a sense current to flow in a direction substantially perpendicular to the plane of the stack including the magnetization pinned layer, the nonmagnetic intermediate layer and the magnetization free layer. At least one of the magnetization pinned layer and the magnetization free layer is substantially formed of a binary or ternary alloy represented by the formula FeaCobNic (where a+b+c=100 at %, and a≦75 at %, b≦75 at %, and c≦63 at %), or formed of an alloy having a body-centered cubic crystal structure.
32 Citations
42 Claims
-
1-24. -24. (canceled)
-
25. A magnetoresistive device, comprising:
-
a magnetization pinned layer of which magnetization direction is substantially pinned to one direction;
a magnetization free layer of which magnetization direction is changed in accordance with an external magnetic field;
a nonmagnetic intermediate layer formed between the magnetization pinned layer and the magnetization free layer; and
electrodes allowing a sense current to flow in a direction substantially perpendicular to the plane of the stack including the magnetization pinned layer, the nonmagnetic intermediate layer and the magnetization free layer, at least one of the magnetization pinned layer and the magnetization free layer comprising a ferromagnetic layer, the ferromagnetic layer is substantially formed of an alloy represented by the general formula (A) given below;
Fe100-aCoa
(A)where 0 at %≦
a≦
20 at %;
and the alloy having a body-centered cubic crystal structure. - View Dependent Claims (26, 27, 28, 29, 30, 31, 32, 33)
-
-
34. A magnetoresistive device, comprising:
-
a magnetization pinned layer of which magnetization direction is substantially pinned to one direction;
a magnetization free layer of which magnetization direction is changed in accordance with an external magnetic field;
a nonmagnetic intermediate layer formed between the magnetization pinned layer and the magnetization free layer; and
electrodes allowing a sense current to flow in a direction substantially perpendicular to the plane of the stack including the magnetization pinned layer, the nonmagnetic intermediate layer and the magnetization free layer, at least one of the magnetization pinned layer and the magnetization free layer comprising a ferromagnetic layer, the ferromagnetic layer is substantially formed of an alloy represented by general formula (A) given below;
(Fe(100-a)/100Coa/100)100-xMx
(A)where 0 at %≦
a≦
20 at %;
0.1 at %≦
x≦
20 at %, and M is at least one element selected from the group consisting of Mn, Cu, Re, Ru, Pd, Pt, Ag, Au and Al;
and the alloy having a body-centered cubic crystal structure. - View Dependent Claims (35, 36, 37, 38, 39, 40, 41, 42)
-
Specification