Lithography mask and lithography system for direction-dependent exposure

• US 20050153216A1
• Filed: 11/26/2004
• Published: 07/14/2005
• Est. Priority Date: 11/28/2003
• Status: Abandoned Application

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Moller, Holger, Ziebold, Ralf, Bauch, Lothar, Crell, Christian
• Application Number:
  US10/998,300
• Publication Number:
  US 20050153216A1
• Time in Patent Office: Days
• US Class Current: 430/5
• CPC Class Codes: G03F 1/36 Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes

Abstract

Lithography mask having a structure for the fabrication of semiconductor components, in particular memory components, for a direction-dependent exposure device, featuring at least one auxiliary structure (1) for minimizing scattered light, the auxiliary structure (1) essentially being arranged in a low-resolution exposure direction of the direction-dependent exposure device (11, 11a, 11b) for the mask (10, 10a, 10b). A means for reducing scattered light is thus created by the auxiliary structure in a simple manner.

Claims

1. A lithography mask having a structure for the fabrication of semiconductor components for a direction-dependent exposure device, the lithography mask comprising:

a mask substrate;

a plurality of main structures disposed over the mask substrate; and

at least one auxiliary structure disposed over the mask substrate, the at least one auxiliary structure for minimizing scattered light, the auxiliary structure essentially being arranged in a low-resolution exposure direction of the direction-dependent exposure device for the mask.

2. The lithography mask as claimed in claim 1, wherein the direction-dependent exposure is effected by means of a dipole element, a quadrupole element, a multipole element and/or an annular element.

3. The lithography mask as claimed in claim 2, wherein the direction-dependent exposure is effected by means of a dipole element.

4. The lithography mask as claimed in claim 2, wherein the direction-dependent exposure is effected by means of a quadrupole element.

5. The lithography mask as claimed in claim 2, wherein the direction-dependent exposure is effected by means of a multipole element.

6. The lithography mask as claimed in claim 2, wherein the direction-dependent exposure is effected by means of an annular element.

7. The lithography mask as claimed in claim 1, wherein the at least one auxiliary structure is formed as a line pattern, as an interrupted line pattern, as a dashed-dotted line pattern and/or as a dotted line pattern for producing a gray scale.

8. The lithography mask as claimed in claim 1, wherein the at least one auxiliary structure is formed as a line pattern.

9. The lithography mask as claimed in claim 1, wherein the at least one auxiliary structure is formed as an interrupted line pattern.

10. The lithography mask as claimed in claim 1, wherein the at least one auxiliary structure is formed as a dashed-dotted line pattern.

11. The lithography mask as claimed in claim 1, wherein the at least one auxiliary structure is formed as a dotted line pattern.

12. The lithography mask as claimed in claim 1, wherein the lithography mask includes a structure for the fabrication of semiconductor memory components.

13. A lithography system comprising:

a lithography mask that includes at least one auxiliary structure disposed over a mask substrate, the at least one auxiliary structure for minimizing scattered light, the auxiliary structure essentially being arranged in a low-resolution exposure direction of the direction-dependent exposure device for the mask; and

a direction-dependent exposure device configured to expose the lithography mask.

14. The lithography system as claimed in claim 13, wherein the exposure device includes a dipole element.

15. The lithography system as claimed in claim 14, wherein the dipole element includes two circular openings.

16. The lithography system as claimed in claim 14, wherein the dipole element includes two circle-segment-shaped openings.

17. The lithography system as claimed in claim 13, wherein the exposure device has a quadrupole element.

18. The lithography system as claimed in claim 17, wherein the quadrupole element has four circular openings.

19. The lithography system as claimed in claim 17, wherein the quadrupole element has four circle-segment-shaped openings.

20. The lithography system as claimed in claim 13, wherein the exposure device has an annular element.

21. A method of fabricating a semiconductor wafer, the method comprising:

providing a mask that includes a plurality of main structures and at least one auxiliary structure disposed over a mask substrate, the at least one auxiliary structure for minimizing scattered light, the auxiliary structure essentially being arranged in a low-resolution exposure direction of the direction-dependent exposure device for the mask;

providing a wafer with a light sensitive layer formed thereon;

transmitting a light beam through the mask and toward the wafer so that a structure of the mask is transferred into the light sensitive layer on the wafer.