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Lithography mask and lithography system for direction-dependent exposure

  • US 20050153216A1
  • Filed: 11/26/2004
  • Published: 07/14/2005
  • Est. Priority Date: 11/28/2003
  • Status: Abandoned Application
First Claim
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1. A lithography mask having a structure for the fabrication of semiconductor components for a direction-dependent exposure device, the lithography mask comprising:

  • a mask substrate;

    a plurality of main structures disposed over the mask substrate; and

    at least one auxiliary structure disposed over the mask substrate, the at least one auxiliary structure for minimizing scattered light, the auxiliary structure essentially being arranged in a low-resolution exposure direction of the direction-dependent exposure device for the mask.

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