Lithography mask and lithography system for direction-dependent exposure
First Claim
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1. A lithography mask having a structure for the fabrication of semiconductor components for a direction-dependent exposure device, the lithography mask comprising:
- a mask substrate;
a plurality of main structures disposed over the mask substrate; and
at least one auxiliary structure disposed over the mask substrate, the at least one auxiliary structure for minimizing scattered light, the auxiliary structure essentially being arranged in a low-resolution exposure direction of the direction-dependent exposure device for the mask.
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Abstract
Lithography mask having a structure for the fabrication of semiconductor components, in particular memory components, for a direction-dependent exposure device, featuring at least one auxiliary structure (1) for minimizing scattered light, the auxiliary structure (1) essentially being arranged in a low-resolution exposure direction of the direction-dependent exposure device (11, 11a, 11b) for the mask (10, 10a, 10b). A means for reducing scattered light is thus created by the auxiliary structure in a simple manner.
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Citations
21 Claims
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1. A lithography mask having a structure for the fabrication of semiconductor components for a direction-dependent exposure device, the lithography mask comprising:
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a mask substrate;
a plurality of main structures disposed over the mask substrate; and
at least one auxiliary structure disposed over the mask substrate, the at least one auxiliary structure for minimizing scattered light, the auxiliary structure essentially being arranged in a low-resolution exposure direction of the direction-dependent exposure device for the mask. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A lithography system comprising:
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a lithography mask that includes at least one auxiliary structure disposed over a mask substrate, the at least one auxiliary structure for minimizing scattered light, the auxiliary structure essentially being arranged in a low-resolution exposure direction of the direction-dependent exposure device for the mask; and
a direction-dependent exposure device configured to expose the lithography mask. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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21. A method of fabricating a semiconductor wafer, the method comprising:
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providing a mask that includes a plurality of main structures and at least one auxiliary structure disposed over a mask substrate, the at least one auxiliary structure for minimizing scattered light, the auxiliary structure essentially being arranged in a low-resolution exposure direction of the direction-dependent exposure device for the mask;
providing a wafer with a light sensitive layer formed thereon;
transmitting a light beam through the mask and toward the wafer so that a structure of the mask is transferred into the light sensitive layer on the wafer.
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Specification