SACRIFICIAL INORGANIC POLYMER INTERMETAL DIELECTRIC DAMASCENE WIRE AND VIA LINER
First Claim
1. A method of forming an interconnect structure comprising the steps of:
- providing a lower metal wiring layer having first metal lines located within a lower low-k dielectric;
depositing an upper low-k dielectric atop said lower metal wiring layer;
etching at least one portion of said upper low-k dielectric to provide at least one via to said first metal lines;
forming rigid dielectric sidewall spacers in said at least one via of said upper low-k dielectric, said dielectric sidewall spacers are of a material selected from the group consisting of SiCH, SiCOH, SiC and SiO2; and
forming second metal lines in said at least one portion of said upper low-k dielectric.
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Accused Products
Abstract
The present invention provides a method of forming a rigid interconnect structure, and the device therefrom, including the steps of providing a lower metal wiring layer having first metal lines positioned within a lower low-k dielectric; depositing an upper low-k dielectric atop the lower metal wiring layer; etching at least one portion of the upper low-k dielectric to provide at least one via to the first metal lines; forming rigid dielectric sidewall spacers in at least one via of the upper low-k dielectric; and forming second metal lines in at least one portion of the upper low-k dielectric. The rigid dielectric sidewall spacers may comprise of SiCH, SiC, SiNH, SiN, or SiO2. Alternatively, the via region of the interconnect structure may be strengthened with a mechanically rigid dielectric comprising SiO2, SiCOH, or doped silicate glass.
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Citations
24 Claims
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1. A method of forming an interconnect structure comprising the steps of:
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providing a lower metal wiring layer having first metal lines located within a lower low-k dielectric;
depositing an upper low-k dielectric atop said lower metal wiring layer;
etching at least one portion of said upper low-k dielectric to provide at least one via to said first metal lines;
forming rigid dielectric sidewall spacers in said at least one via of said upper low-k dielectric, said dielectric sidewall spacers are of a material selected from the group consisting of SiCH, SiCOH, SiC and SiO2; and
forming second metal lines in said at least one portion of said upper low-k dielectric. - View Dependent Claims (2, 3)
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- 4. (canceled)
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10. A method of forming an interconnect structure comprising the steps of:
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providing a lower metal wiring level having first metal lines positioned within a lower low-k dielectric;
depositing a mechanically rigid dielectric layer atop said lower metal wiring level, said mechanically rigid dielectric layer is a material selected from the group consisting of SiO2, a doped silicate glass, a carbon doped oxide and SiC;
forming at least one via through said mechanically rigid dielectric layer to a portion of said first metal lines; and
forming an upper metal wiring level having second metal lines positioned within a upper low-k dielectric, said second metal lines being electrically connected to said first metal lines through said via, wherein said via comprises a metal having a coefficient of thermal expansion that substantially matches said mechanically rigid dielectric layer, said mechanically rigid dielectric layer separating said upper metal wiring level from said lower metal wiring level. - View Dependent Claims (11, 13, 14, 15, 16, 17, 18)
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12. (canceled)
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19. An interconnect structure comprising:
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a lower metal wiring level comprising first metal lines positioned within a lower low-k dielectric;
an upper metal wiring level atop said lower metal wiring level, said upper metal wiring level comprising second metal lines positioned within an upper low-k dielectric;
and a plurality of vias through a portion of said upper low-k dielectric electrically connecting said lower metal wiring level and said upper metal wiring level, where said plurality of vias comprise a set of rigid dielectric sidewall spacers. - View Dependent Claims (20, 21)
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22. An interconnect structure comprising:
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a lower metal wiring level comprising first metal lines positioned within a lower low-k dielectric;
a mechanically rigid dielectric positioned on said lower metal wiring level, said mechanically rigid dielectric comprising a plurality of metal vias; and
an upper metal wiring level atop said mechanically rigid dielectric, said upper metal wiring level comprising second metal lines positioned within an upper low-k dielectric, where said plurality of metal vias electrically connect said lower metal wiring level and said upper metal wiring level. - View Dependent Claims (23, 24)
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Specification