Nonplanar transistors with metal gate electrodes
First Claim
1. A semiconductor device comprising:
- a semiconductor body formed on an insulating substrate, said semiconductor body having a top surface and a first and second laterally opposite sidewalls;
a gate dielectric formed on said top surface of said semiconductor body and on said first and second laterally opposite sidewalls of said semiconductor body;
a gate electrode formed on said gate dielectric on said top surface of said semiconductor body and adjacent to said gate dielectric on said first and said second laterally opposite sidewalls of said semiconductor body, wherein said gate electrode comprises a metal film formed directly adjacent to said gate dielectric; and
a pair of source/drain regions formed in said semiconductor body on opposite sides of said gate electrode.
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Accused Products
Abstract
A semiconductor device comprising a semiconductor body having a top surface and a first and second laterally opposite sidewalls as formed on an insulating substrate. A gate dielectric is formed on the top surface of the semiconductor body and on the first and second laterally opposite sidewalls of the semiconductor body. A gate electrode is then formed on the gate dielectric on the top surface of the semiconductor body and adjacent to the gate dielectric on the first and second laterally opposite sidewalls of the semiconductor body. The gate electrode comprises a metal film formed directly adjacent to the gate dielectric layer. A pair of source and drain regions are uniformed in the semiconductor body on opposite sides of the gate electrode.
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Citations
19 Claims
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1. A semiconductor device comprising:
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a semiconductor body formed on an insulating substrate, said semiconductor body having a top surface and a first and second laterally opposite sidewalls;
a gate dielectric formed on said top surface of said semiconductor body and on said first and second laterally opposite sidewalls of said semiconductor body;
a gate electrode formed on said gate dielectric on said top surface of said semiconductor body and adjacent to said gate dielectric on said first and said second laterally opposite sidewalls of said semiconductor body, wherein said gate electrode comprises a metal film formed directly adjacent to said gate dielectric; and
a pair of source/drain regions formed in said semiconductor body on opposite sides of said gate electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A semiconductor integrated circuit comprising:
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a first semiconductor device comprising;
a first semiconductor body formed on an insulating substrate, said first semiconductor body having a top surface and a first and second laterally opposite sidewalls;
a first gate dielectric formed on said top surface of said first semiconductor body and on said first and second laterally opposite sidewalls of said first semiconductor body;
a first gate electrode formed on said first gate dielectric on said top surface of said first semiconductor body and adjacent to said gate dielectric on said first and second laterally opposite sidewalls of said semiconductor body, wherein said first gate electrode comprises a first metal film formed directly adjacent to said first gate dielectric; and
a first pair of source/drain regions having p type conductivity formed in said first semiconductor body on opposite sides of said first gate electrode; and
a second semiconductor device comprising;
a second semiconductor body formed on said insulating substrate, said second semiconductor body having a top surface and a first and second laterally opposite sidewalls;
a second gate dielectric formed on said top surface of said second semiconductor body and on said first and second laterally opposite sidewalls of said second semiconductor body;
a second gate electrode formed on said second gate dielectric on said top surface of said second semiconductor body and adjacent to said gate dielectric on said first and second laterally opposite sidewalls of said second semiconductor body, wherein second gate electrode comprises a second metal film formed directly adjacent to said second gate dielectric wherein said second metal film is different than said first metal film; and
a second pair of source/drain regions having n type conductivity formed in said second semiconductor body on opposite sides of said second gate electrode. - View Dependent Claims (14, 15, 16, 17, 18)
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19-42. -42. (canceled)
Specification