Light emitting device and method of manufacturing the same

• US 20050156172A1
• Filed: 02/18/2005
• Published: 07/21/2005
• Est. Priority Date: 12/27/2001
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Takayama, Toru, Murakami, Satoshi, Akimoto, Kengo
• Granted Patent: US 7,033,848 B2
• Time in Patent Office: Days
• US Class Current: 257/72
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H10K 50/844 Encapsulations
• CPC Class Codes: H10K 59/123 Connection of the pixel electrodes to the thin film transistors [TFT]
• CPC Class Codes: H10K 59/124 Insulating layers formed between TFT elements and OLED elements
• CPC Class Codes: H10K 59/873 Encapsulations
• CPC Class Codes: H10K 59/8731 multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers

Abstract

A light emitting device is provided which has a structure for preventing degradation of a light emitting element due to water and oxygen contained in an interlayer insulating film formed between a TFT and the light emitting element. A TFT is formed on a substrate, an inorganic insulating film is formed on the TFT from an inorganic material and serves as a first insulating film, an organic insulating film is formed on the first insulating film from an organic material and serves as a second insulating film, and an inorganic insulating film is formed on the second insulating film from an inorganic material and serves as a third insulating film. Thus obtained is a structure for preventing the second insulating film from releasing moisture and oxygen. In order to avoid defect in forming the film, a portion of the third insulating film where a contact hole is formed is removed alone. Then, a light emitting element composed of an anode, an organic compound layer, and a cathode is formed on the third insulating film. A TFT and a light emitting element in a light emitting device of this application are connected to each other through a wire formed in a contact hole.

Claims

1-8. -8. (canceled)

9. A method of manufacturing a light emitting device, comprising:

forming a thin film transistor on an insulating surface;

forming a first insulating film comprising an inorganic material over the thin film transistor;

forming a second insulating film comprising an organic material over the first insulating film by application;

forming a third insulating film comprising an inorganic material over the second insulating film by sputtering;

forming a conducting film over the third insulating film, the conductive film serving as a first electrode of a light emitting element;

forming the first electrode from the conductive film by first etching using a mask;

pattering the third insulating film by second etching to form a patterned third insulating film, thereby exposing portion of the second insulating film;

forming a contact hole in the first insulating film, the second insulating film, and a gate insulating film of the thin film transistor wherein the contact hole is located in the exposed portion of the second insulating film;

forming a wire in the contact hole wherein the wire is brought into contact with the thin film transistor and the first electrode;

forming an organic compound layer over the first electrode; and

forming a second electrode of the light emitting element over the organic compound layer.

12. A method of manufacturing a light emitting device according to claim 9, wherein the interlayer insulating film is formed by sputtering.

15. A method of manufacturing a light emitting device according to claim 9,

wherein the film formed from an inorganic material by sputtering uses silicon as the target and gas containing noble gas and nitrogen, and

wherein the silicon content ratio of the film is 25.0 atomic % or higher and 35.0 atomic % or lower and the nitrogen content ratio thereof is 35.0 atomic % or higher and 65.0 atomic % or lower.

18. A method of manufacturing a light emitting device according to claim 12,

wherein the film formed from an inorganic material by sputtering uses silicon as the target and gas containing noble gas and nitrogen, and

wherein the silicon content ratio of the film is 25.0 atomic % or higher and 35.0 atomic % or lower and the nitrogen content ratio thereof is 35.0 atomic % or higher and 65.0 atomic % or lower.

10. A method of manufacturing a light emitting device, comprising:

forming a thin film transistor on an insulating surface;

forming a first insulating film comprising an inorganic material over the thin film transistor;

forming a second insulating film comprising an organic material over the first insulating film by application;

forming a third insulating film comprising an inorganic material over the second insulating film by sputtering;

forming a conducting film over the third insulating film, the conductive film serving as a first electrode of a light emitting element;

forming the first electrode from the conductive film by wet etching using a mask; and

pattering the third insulating film by dry etching to form a patterned third insulating film, thereby exposing portion of the second insulating film.

13. A method of manufacturing a light emitting device according to claim 10, wherein the interlayer insulating film is formed by sputtering.

16. A method of manufacturing a light emitting device according to claim 10,

wherein the film formed from an inorganic material by sputtering uses silicon as the target and gas containing noble gas and nitrogen, and

wherein the silicon content ratio of the film is 25.0 atomic % or higher and 35.0 atomic % or lower and the nitrogen content ratio thereof is 35.0 atomic % or higher and 65.0 atomic % or lower.

19. A method of manufacturing a light emitting device according to claim 13,

wherein the film formed from an inorganic material by sputtering uses silicon as the target and gas containing noble gas and nitrogen, and

wherein the silicon content ratio of the film is 25.0 atomic % or higher and 35.0 atomic % or lower and the nitrogen content ratio thereof is 35.0 atomic % or higher and 65.0 atomic % or lower.

11. A method of manufacturing a light emitting device, comprising:

forming a thin film transistor on an insulating surface;

forming a first insulating film comprising an inorganic material over the thin film transistor;

forming a second insulating film comprising an organic material over the first insulating film by application;

forming a third insulating film comprising an inorganic material over the second insulating film by sputtering;

forming a conducting film over the third insulating film, the conductive film serving as a first electrode of a light emitting element;

forming the first electrode from the conductive film by wet etching using a mask;

pattering the third insulating film by dry etching to form a patterned third insulating film, thereby exposing portion of the second insulating film;

forming a contact hole in the first insulating film, the second insulating film, and a gate insulating film of the thin film transistor wherein the contact hole is located in the exposed portion of the second insulating film;

forming a wire in the contact hole wherein the wire is brought into contact with the thin film transistor and the first electrode;

forming an organic compound layer over the first electrode; and

forming a second electrode over the organic compound layer.

14. A method of manufacturing a light emitting device according to claim 11, wherein the interlayer insulating film is formed by sputtering.

17. A method of manufacturing a light emitting device according to claim 11,

wherein the film formed from an inorganic material by sputtering uses silicon as the target and gas containing noble gas and nitrogen, and

wherein the silicon content ratio of the film is 25.0 atomic % or higher and 35.0 atomic % or lower and the nitrogen content ratio thereof is 35.0 atomic % or higher and 65.0 atomic % or lower.

20. A method of manufacturing a light emitting device according to claim 14,

wherein the film formed from an inorganic material by sputtering uses silicon as the target and gas containing noble gas and nitrogen, and

wherein the silicon content ratio of the film is 25.0 atomic % or higher and 35.0 atomic % or lower and the nitrogen content ratio thereof is 35.0 atomic % or higher and 65.0 atomic % or lower.