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Examination apparatus for biological sample and chemical sample

  • US 20050156207A1
  • Filed: 09/03/2004
  • Published: 07/21/2005
  • Est. Priority Date: 01/21/2004
  • Status: Abandoned Application
First Claim
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1. A semiconductor integrated circuit device formed on an SOI substrate, comprising:

  • a first semiconductor region of second conductivity type which is formed on said SOI substrate and in which a plurality of MOS transistors of first conductivity type are formed;

    a second semiconductor region of first conductivity type which is formed on said SOI substrate and in which a plurality of MOS transistors of second conductivity type are formed;

    a plurality of wirings formed on said first and second semiconductor regions; and

    an oxide layer for electrically isolating said wirings or said wirings from said SOI substrate, wherein sidewalls of said oxide layer are covered with an ion impermeable insulating film.

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