Lithography device for semiconductor circuit pattern generation

• US 20050156265A1
• Filed: 01/24/2005
• Published: 07/21/2005
• Est. Priority Date: 04/08/1992
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: ELM TECHNOLOGY CORPORATION
• Inventors: Leedy, Glenn Joseph
• Granted Patent: US 7,615,837 B2
• Time in Patent Office: Days
• US Class Current: 257/432
• CPC Class Codes: G02F 1/13452 Conductors connecting driver circuitry and terminals of panels
• CPC Class Codes: G02F 1/136281 having a transmissive semiconductor substrate
• CPC Class Codes: G03F 7/70658 Electrical testing
• CPC Class Codes: G11C 29/006 at wafer scale level, i.e. wafer scale integration [WSI]
• CPC Class Codes: H01L 21/762 Dielectric regions , e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
• CPC Class Codes: H01L 21/76264 SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
• CPC Class Codes: H01L 21/76289 Lateral isolation by air gap
• CPC Class Codes: H01L 21/764 Air gaps H01L21/76264 takes precedence
• CPC Class Codes: H01L 21/8221 Three dimensional integrated circuits stacked in different levels
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/05552 in top view
• CPC Class Codes: H01L 2224/0557 the external layer being disposed on a via connection of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/13009 Bump connector integrally formed with a via connection of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/16227 the bump connector connecting to a bond pad of the item
• CPC Class Codes: H01L 2224/80001 by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
• CPC Class Codes: H01L 23/538 the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates H05K takes precedence; manufacture or treatment H01L21/4846 ; mountings per se H01L23/12; materials H01L23/49866
• CPC Class Codes: H01L 23/5381 Crossover interconnections, e.g. bridge stepovers
• CPC Class Codes: H01L 23/5383 Multilayer substrates H01L23/5385 takes precedence; multilayer metallisation on monolayer substrates H01L23/538
• CPC Class Codes: H01L 23/5386 Geometry or layout of the interconnection structure
• CPC Class Codes: H01L 23/5387 : Flexible insulating substrates H01L23/5388 takes precedence
• CPC Class Codes: H01L 25/0652 : the devices being arranged next and on each other, i.e. mixed assemblies
• CPC Class Codes: H01L 25/0655 : the devices being arranged next to each other
• CPC Class Codes: H01L 25/50 : Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 27/0207 : Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00011 : Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/0002 : Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/0102 : Calcium [Ca]
• CPC Class Codes: H01L 2924/01057 : Lanthanum [La]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15153 : the die mounting substrate comprising a recess for hosting the device
• CPC Class Codes: H01L 2924/15165 : Monolayer substrate
• CPC Class Codes: H01L 2924/15312 : being a pin array, e.g. PGA
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: Y10S 148/135 : Removal of substrate
• CPC Class Codes: Y10S 438/928 : Front and rear surface processing
• CPC Class Codes: Y10S 438/938 : Lattice strain control or utilization
• CPC Class Codes: Y10S 438/942 : Masking
• CPC Class Codes: Y10S 438/967 : Semiconductor on specified insulator
• CPC Class Codes: Y10S 438/977 : Thinning or removal of substrate
• CPC Class Codes: Y10T 29/49128 : Assembling formed circuit to base
• CPC Class Codes: Y10T 29/49162 : by using wire as conductive path
• CPC Class Codes: Y10T 29/49165 : by forming conductive walled aperture in base
• CPC Class Codes: Y10T 29/49171 : with encapsulating
• CPC Class Codes: Y10T 29/4921 : with bonding

Abstract

General purpose methods for the fabrication of integrated circuits from flexible membranes formed of very thin low stress dielectric materials, such as silicon dioxide or silicon nitride, and semiconductor layers. Semiconductor devices are formed in a semiconductor layer of the membrane. The semiconductor membrane layer is initially formed from a substrate of standard thickness, and all but a thin surface layer of the substrate is then etched or polished away. In another version, the flexible membrane is used as support and electrical interconnect for conventional integrated circuit die bonded thereto, with the interconnect formed in multiple layers in the membrane. Multiple die can be connected to one such membrane, which is then packaged as a multi-chip module. Other applications are based on (circuit) membrane processing for bipolar and MOSFET transistor fabrication, low impedance conductor interconnecting fabrication, flat panel displays, maskless (direct write) lithography, and 3D IC fabrication.

Claims

1-76. -76. (canceled)

77. A semiconductor processing lithography apparatus for maskless pattern generation comprising:

an array of radiation source cells arranged in rows and columns, the array being formed with at least one flexible dielectric layer; and

control logic underlying the at least one flexible dielectric layer for controlling the array of radiation source cells, wherein each cell comprises;

a source of radiation;

a target on which the radiation is incident for generating X-rays; and

an aperture for emitting the X-rays from the target onto a surface to be exposed.

78. The apparatus of claim 77, wherein each cell has an area less than about 50 microns by 50 microns.

79. The apparatus of claim 77, wherein the array of radiation source cells includes at least one million cells.

80. The apparatus of claim 77, wherein the radiation source cells expose separate areas of the surface to be exposed.

81. The apparatus of claim 80, wherein the separate areas are substantially non-overlapping.

82. The apparatus of claim 80, wherein a substantial portion of the separate areas are exposed simultaneously.

83. The apparatus of claim 77, wherein the at least one flexible dielectric layer is a stress-controlled dielectric layer.

84. The apparatus of claim 77, wherein the at least one flexible dielectric layer is elastic.

85. The apparatus of claim 77, wherein the at least one flexible dielectric layer is capable of forming a free standing membrane.

86. The apparatus of claim 77, further comprising a plurality of interconnect conductors formed within the at least one flexible dielectric layer.

87. The apparatus of claim 77, further comprising a plurality of interconnect conductors formed on the at least one flexible dielectric layer.

88. The apparatus of claim 77, wherein the at least one flexible dielectric layer is selected from the group consisting of silicon dioxide and silicon nitride.

89. The apparatus of claim 77, wherein the at least one flexible dielectric layer is formed by Chemical Vapor Deposition.

90. The apparatus of claim 77, wherein the at least one flexible dielectric layer is formed by multiple RF energy sources.

91. The apparatus of claim 77, wherein the at least one flexible dielectric layer is formed at a temperature of about 400°

C.

92. The apparatus of claim 77, wherein the stress of the at least one flexible dielectric layer is less than about 8×

10⁸ dynes/cm².

93. The apparatus of claim 92, wherein the stress is tensile.

94. The apparatus of claim 77, wherein the stress of the at least one flexible dielectric layer is 2 to 100 times less than the fracture strength of the at least one flexible dielectric layer.

95. The apparatus of claim 94, wherein the stress is tensile.

96. The apparatus of claim 77, wherein the thickness of the at least one flexible dielectric layer is about 50 microns or less.

97. The apparatus of claim 77, further comprising at least one thinned flexible substrate that has integrated circuits formed thereon and that is bonded to the at least one flexible dielectric layer.

98. The apparatus of claim 77, further comprising at least one thinned flexible substrate that has integrated circuits formed thereon and that overlies the at least one flexible dielectric layer.

99. A lithography pattern generating device comprising:

an array of cells arranged in rows and columns, the array being formed with at least one flexible dielectric layer, each cell being individually controlled to permit passage of charged particles from an external source; and

control logic underlying the at least one flexible dielectric layer for controlling each cell;

wherein each cell comprises an aperture for emitting the particles onto a surface to be exposed.

100. The device of claim 99, wherein each cell has an area less than about 50 microns by 50 microns.

101. The device of claim 99, wherein the array of cells includes at least one million cells.

102. The device of claim 99, wherein each cell exposes separate areas of the surface to be exposed.

103. The device of claim 102, wherein the separate areas are substantially non-overlapping.

104. The device of claim 102, wherein a substantial portion of the separate areas are exposed simultaneously.

105. The device of claim 99, wherein the charged particles are selected from the group consisting of electrons and protons.

106. The device of claim 99, wherein the at least one flexible dielectric layer is a stress-controlled dielectric layer.

107. The device of claim 99, wherein the at least one flexible dielectric layer is elastic.

108. The device of claim 99, wherein the at least one flexible dielectric layer is capable of forming a free standing membrane.

109. The device of claim 99, further comprising a plurality of interconnect conductors formed within the at least one flexible dielectric layer.

110. The device of claim 99, further comprising a plurality of interconnect conductors formed on the at least one flexible dielectric layer.

111. The device of claim 99, wherein the at least one flexible dielectric layer is selected from the group consisting of silicon dioxide and silicon nitride.

112. The device of claim 99, wherein the at least one flexible dielectric layer is formed by Chemical Vapor Deposition.

113. The device of claim 99, wherein the at least one flexible dielectric layer is formed by multiple RF energy sources.

114. The device of claim 99, wherein the at least one flexible dielectric layer is formed at a temperature of about 400°

C.

115. The device of claim 99, wherein the stress of the at least one flexible dielectric layer is less than about 8×

10⁸ dynes/cm².

116. The device of claim 115, wherein the stress is tensile.

117. The device of claim 99, wherein the stress of the at least one flexible dielectric layer is 2 to 100 times less than the fracture strength of the at least one flexible dielectric layer.

118. The device of claim 117, wherein the stress is tensile.

119. The device of claim 99, wherein the thickness of the at least one flexible dielectric layer is about 50 microns or less.

120. The device of claim 99, further comprising at least one thinned flexible substrate that has integrated circuits formed thereon and that is bonded to the at least one flexible dielectric layer.

121. The device of claim 99, further comprising at least one thinned flexible substrate that has integrated circuits formed thereon and that overlies the at least one flexible dielectric layer.

122. A semiconductor processing lithography apparatus for maskless pattern generation comprising:

an array of radiation source cells arranged in rows and columns, the array being formed with at least one flexible dielectric layer; and

control logic for controlling the array of radiation source cells, wherein each cell comprises;

a source of radiation;

a target on which the radiation is incident for generating X-rays; and

an aperture for emitting the X-rays from the target onto a surface to be exposed.

123. The apparatus of claim 122, wherein each cell has an area less than about 50 microns by 50 microns.

124. The apparatus of claim 122, wherein the array of radiation source cells includes at least one million cells.

125. The apparatus of claim 122, wherein each radiation source cell exposes separate areas of the surface to be exposed.

126. The apparatus of claim 125, wherein the separate areas are substantially non-overlapping.

127. The apparatus of claim 125, wherein a substantial portion of the separate areas are exposed simultaneously.

128. The apparatus of claim 122, wherein the at least one flexible dielectric layer is a stress-controlled dielectric layer.

129. The apparatus of claim 122, wherein the at least one flexible dielectric layer is elastic.

130. The apparatus of claim 122, wherein the at least one flexible dielectric layer is capable of forming a free standing membrane.

131. The apparatus of claim 122, further comprising a plurality of interconnect conductors formed within the at least one flexible dielectric layer.

132. The apparatus of claim 122, further comprising a plurality of interconnect conductors formed on the at least one flexible dielectric layer.

133. The apparatus of claim 122, wherein the at least one flexible dielectric layer is selected from the group consisting of silicon dioxide and silicon nitride.

134. The apparatus of claim 122, wherein the at least one flexible dielectric layer is formed by Chemical Vapor Deposition.

135. The apparatus of claim 122, wherein the at least one flexible dielectric layer is formed by multiple RF energy sources.

136. The apparatus of claim 122, wherein the at least one flexible dielectric layer is formed at a temperature of about 400°

C.

137. The apparatus of claim 122, wherein the stress of the at least one flexible dielectric layer is less than about 8×

10⁸ dynes/cm².

138. The apparatus of claim 137, wherein the stress is tensile.

139. The apparatus of claim 122, wherein the stress of the at least one flexible dielectric layer is 2 to 100 times less than the fracture strength of the at least one flexible dielectric layer.

140. The apparatus of claim 139, wherein the stress is tensile.

141. The apparatus of claim 122, wherein the thickness of the at least one flexible dielectric layer is about 50 microns or less.

142. The apparatus of claim 122, further comprising at least one thinned flexible substrate that has integrated circuits formed thereon and that is bonded to the at least one flexible dielectric layer.

143. The apparatus of claim 122, further comprising at least one thinned flexible substrate that has integrated circuits formed thereon and that overlies the at least one flexible dielectric layer.

144. A lithography pattern generating device comprising:

an array of cells arranged in rows and columns, the array being formed with at least one flexible dielectric layer, each cell being individually controlled to permit passage of charged particles from an external source; and

control logic for controlling each cell;

wherein each cell comprises an aperture for emitting the particles onto a surface to be exposed.

145. The device of claim 144, wherein each cell has an area less than about 50 microns by 50 microns.

146. The device of claim 144, wherein the array of cells includes at least one million cells.

147. The device of claim 144, wherein each cell exposes separate areas of the surface to be exposed.

148. The device of claim 147, wherein the separate areas are substantially non-overlapping.

149. The device of claim 147, wherein a substantial portion of the separate areas are exposed simultaneously.

150. The device of claim 144, wherein the charged particles are selected from the group consisting of electrons and protons.

151. The device of claim 144, wherein the at least one flexible dielectric layer is a stress-controlled dielectric layer.

152. The device of claim 144, wherein the at least one flexible dielectric layer is elastic.

153. The device of claim 144, wherein the at least one flexible dielectric layer is capable of forming a free standing membrane.

154. The device of claim 144, further comprising a plurality of interconnect conductors formed within the at least one flexible dielectric layer.

155. The device of claim 144, further comprising a plurality of interconnect conductors formed on the at least one flexible dielectric layer.

156. The device of claim 144, wherein the at least one flexible dielectric layer is selected from the group consisting of silicon dioxide and silicon nitride.

157. The device of claim 144, wherein the at least one flexible dielectric layer is formed by Chemical Vapor Deposition.

158. The device of claim 144, wherein the at least one flexible dielectric layer is formed by multiple RF energy sources.

159. The device of claim 144, wherein the at least one flexible dielectric layer is formed at a temperature of about 400°

C.

160. The device of claim 144, wherein the stress of the at least one flexible dielectric layer is less than about 8×

10⁸ dynes/cm².

161. The device of claim 160, wherein the stress is tensile.

162. The device of claim 144, wherein the stress of the at least one flexible dielectric layer is 2 to 100 times less than the fracture strength of the at least one flexible dielectric layer.

163. The device of claim 162, wherein the stress is tensile.

164. The device of claim 144, wherein the thickness of the at least one flexible dielectric layer is about 50 microns or less.

165. The device of claim 144, further comprising at least one thinned flexible substrate that has integrated circuits formed thereon and that is bonded to the at least one flexible dielectric layer.

166. The device of claim 144, further comprising at least one rigid substrate.

167. The device of claim 144, further comprising at least one thinned flexible substrate that has integrated circuits formed thereon and that overlies the at least one flexible dielectric layer.

168. A lithography pattern generating device comprising:

an array of cells arranged in rows and columns, the array being formed with at least one flexible dielectric layer, each cell defining an aperture to permit passage of charged particles from a source;

a movable shutter for covering each aperture to block the passage; and

control logic underlying the at least one flexible dielectric layer for controlling movement of the shutter for each aperture.

169. The device of claim 168, wherein each cell has an area less than about 50 microns by 50 microns.

170. The device of claim 168, wherein the array of cells includes at least one million cells.

171. The device of claim 168, wherein the aperture of each cell exposes separate areas of a surface to be exposed.

172. The device of claim 171, wherein the separate areas are substantially non-overlapping.

173. The device of claim 171, wherein a substantial portion of the separate areas are exposed simultaneously.

174. The device of claim 168, wherein the charged particles are selected from the group consisting of electrons and protons.

175. The device of claim 168, wherein the at least one flexible dielectric layer is a stress-controlled dielectric layer.

176. The device of claim 168, wherein the at least one flexible dielectric layer is elastic.

177. The device of claim 168, wherein the at least one flexible dielectric layer is capable of forming a free standing membrane.

178. The device of claim 168, further comprising a plurality of interconnect conductors formed within the at least one flexible dielectric layer.

179. The device of claim 168, further comprising a plurality of interconnect conductors formed on the at least one flexible dielectric layer.

180. The device of claim 168, wherein the at least one flexible dielectric layer is selected from the group consisting of silicon dioxide and silicon nitride.

181. The device of claim 168, wherein the at least one flexible dielectric layer is formed by Chemical Vapor Deposition.

182. The device of claim 168, wherein the at least one flexible dielectric layer is formed by multiple RF energy sources.

183. The device of claim 168, wherein the at least one flexible dielectric layer is formed with a temperature of about 400°

C.

184. The device of claim 168, wherein the stress of the at least one flexible dielectric layer is less than about 8×

10⁸ dynes/cm².

185. The device of claim 184, wherein the stress is tensile.

186. The device of claim 168, wherein the stress of the at least one flexible dielectric layer is 2 to 100 times less than the fracture strength of the at least one flexible dielectric layer.

187. The device of claim 186, wherein the stress is tensile.

188. The device of claim 168, wherein the thickness of the at least one flexible dielectric layer is about 50 microns or less.

189. The device of claim 168, further comprising at least one thinned flexible substrate with integrated circuits formed thereon bonded to the at least one flexible dielectric layer.

190. The device of claim 168, further comprising at least one thinned flexible substrate that has integrated circuits formed thereon and that overlies the at least one flexible dielectric layer.

191. A lithography pattern generating device comprising:

an array of cells arranged in rows and columns, the array being formed with at least one flexible dielectric layer, each cell defining an aperture to permit passage of charged particles from a source;

a movable shutter for covering each aperture to block the passage; and

control logic for controlling movement of each shutter.

192. The device of claim 191, wherein each cell has an area less than about 50 microns by 50 microns.

193. The device of claim 191, wherein the array of cells includes at least one million cells.

194. The device of claim 191, wherein the aperture for each cell exposes separate areas of a surface to be exposed.

195. The device of claim 194, wherein the separate areas are substantially non-overlapping.

196. The device of claim 194, wherein a substantial portion of the separate areas are exposed simultaneously.

197. The device of claim 191, wherein the charged particles are selected from the group consisting of electrons and protons.

198. The apparatus of claim 191, wherein the at least one flexible dielectric layer is a stress-controlled dielectric layer.

199. The apparatus of claim 191, wherein the at least one flexible dielectric layer is elastic.

200. The apparatus of claim 191, wherein the at least one flexible dielectric layer is capable of forming a free standing membrane.

201. The apparatus of claim 191, further comprising a plurality of interconnect conductors formed within the at least one flexible dielectric layer.

202. The apparatus of claim 191, further comprising a plurality of interconnect conductors formed on the at least one flexible dielectric layer.

203. The apparatus of claim 191, wherein the at least one flexible dielectric layer is selected from the group consisting of silicon dioxide and silicon nitride.

204. The apparatus of claim 191, wherein the at least one flexible dielectric layer is formed by Chemical Vapor Deposition.

205. The apparatus of claim 191, wherein the at least one flexible dielectric layer is formed by multiple RF energy sources.

206. The apparatus of claim 191, wherein the at least one flexible dielectric layer is formed at a temperature of about 400°

C.

207. The apparatus of claim 191, wherein the stress of the at least one flexible dielectric layer is less than about 8×

10⁸ dynes/cm².

208. The apparatus of claim 207, wherein the stress is tensile.

209. The apparatus of claim 191, wherein the stress of the at least one flexible dielectric layer is 2 to 100 times less than the fracture strength of the at least one flexible dielectric layer.

210. The apparatus of claim 209, wherein the stress is tensile.

211. The apparatus of claim 191, wherein the thickness of the at least one flexible dielectric layer is about 50 microns or less.

212. The apparatus of claim 191, further comprising at least one thinned flexible substrate that has integrated circuits formed thereon and that is bonded to the at least one flexible dielectric layer.

213. The apparatus of claim 191, further comprising at least one thinned flexible substrate that has integrated circuits formed thereon and that overlies the at least one flexible dielectric layer.

214. A lithography tool comprising:

an array of radiation source cells formed on a first substrate with a major portion of the first substrate removed, wherein each radiation source cell selectively irradiates a minute area of a second substrate placed in proximity to the lithography tool; and

control circuitry integrated with the first substrate for individually controlling each of the radiation source cells.

215. The apparatus of claim 214, wherein each cell has an area less than about 50 microns by 50 microns.

216. The apparatus of claim 214, wherein the array of radiation source cells includes at least one million cells.

217. The apparatus of claim 214, wherein each cell exposes separate areas of a surface to be exposed.

218. The apparatus of claim 217, wherein the separate areas are substantially non-overlapping.

219. The apparatus of claim 217, wherein a substantial portion of the separate areas are exposed simultaneously.

220. The apparatus of claim 214, wherein the radiation from a source cell is selected from the group consisting of charged particles and electromagnetic.

221. The apparatus of claim 220, wherein the electromagnetic radiation is selected from the group consisting of optical, UV, and X-ray.

222. The apparatus of claim 214, wherein the first substrate is a semiconductor substrate.

223. The apparatus of claim 214, further comprising at least one flexible dielectric layer.

224. The apparatus of claim 223, wherein the at least one flexible dielectric layer is a stress-controlled dielectric layer.

225. The apparatus of claim 223, wherein the at least one flexible dielectric layer is elastic.

226. The apparatus of claim 223, wherein the at least one flexible dielectric layer is capable of forming a free standing membrane.

227. The apparatus of claim 223, further comprising a plurality of interconnect conductors formed within the at least one flexible dielectric layer.

228. The apparatus of claim 223, further comprising a plurality of interconnect conductors formed on the at least one flexible dielectric layer.

229. The apparatus of claim 223, wherein the at least one flexible dielectric layer is selected from the group consisting of silicon dioxide and silicon nitride.

230. The apparatus of claim 223, wherein the at least one flexible dielectric layer is formed by Chemical Vapor Deposition.

231. The apparatus of claim 223, wherein the at least one flexible dielectric layer is formed by multiple RF energy sources.

232. The apparatus of claim 223, wherein the at least one flexible dielectric layer is formed at a temperature of about 400°

C.

233. The apparatus of claim 223, wherein the stress of the at least one flexible dielectric layer is less than about 8×

10⁸ dynes/cm².

234. The apparatus of claim 233, wherein the stress is tensile.

235. The apparatus of claim 223, wherein the stress of the at least one flexible dielectric layer is 2 to 100 times less than the fracture strength of the at least one flexible dielectric layer.

236. The apparatus of claim 235, wherein the stress is tensile.

237. The apparatus of claim 223, wherein the thickness of the at least one flexible dielectric layer is about 50 microns or less.

238. The apparatus of claim 223, further comprising at least one thinned flexible substrate that has integrated circuits formed thereon and that is bonded to the at least one flexible dielectric layer.

239. The apparatus of claim 223, further comprising at least one thinned flexible substrate that has integrated circuits formed thereon and that overlies the at least one flexible dielectric layer.