Low dielectric constant film produced from silicon compounds comprising silicon-carbon bonds
First Claim
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1. A substrate, comprising:
- a conformal dielectric layer comprising silicon, oxygen bonded to the silicon, and carbon bonded to the silicon, wherein the conformal dielectric layer has a carbon content of at least 1% by atomic weight; and
a silicon carbide layer adjacent the conformal dielectric layer.
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Abstract
A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH3SiH3, and N2O.
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16 Claims
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1. A substrate, comprising:
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a conformal dielectric layer comprising silicon, oxygen bonded to the silicon, and carbon bonded to the silicon, wherein the conformal dielectric layer has a carbon content of at least 1% by atomic weight; and
a silicon carbide layer adjacent the conformal dielectric layer. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A structure, comprising:
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an oxidized organosilane layer on a substrate, wherein the oxidized organosilane layer comprises silicon, oxygen bonded to the silicon, and carbon bonded to the silicon and wherein the oxidized organosilane layer has a carbon content of at least 1% by atomic weight; and
a silicon carbide layer on the oxidized organosilane layer. - View Dependent Claims (8, 9, 10, 11, 12)
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13. A method of forming a structure, comprising:
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depositing an oxidized organosilane layer on a substrate, wherein the oxidized organosilane layer comprises silicon, oxygen bonded to the silicon, and carbon bonded to the silicon and wherein the oxidized organosilane layer has a carbon content of at least 1% by atomic weight; and
forming a silicon carbide layer on the oxidized organosilane layer. - View Dependent Claims (14, 15, 16)
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Specification