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Low dielectric constant film produced from silicon compounds comprising silicon-carbon bonds

  • US 20050156317A1
  • Filed: 02/11/2005
  • Published: 07/21/2005
  • Est. Priority Date: 02/11/1998
  • Status: Abandoned Application
First Claim
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1. A substrate, comprising:

  • a conformal dielectric layer comprising silicon, oxygen bonded to the silicon, and carbon bonded to the silicon, wherein the conformal dielectric layer has a carbon content of at least 1% by atomic weight; and

    a silicon carbide layer adjacent the conformal dielectric layer.

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