Liquid crystal display device and manufacturing method therefor

US 20050157236A1
Filed: 09/28/2004
Published: 07/21/2005
Est. Priority Date: 09/29/2003
Status: Abandoned Application

First Claim

Patent Images

1. A liquid crystal display device made by filling liquid crystal between a first transparent insulating substrate (an active substrate) in which unit pixels having at least an insulating gate type transistor, a signal line doubling as a source wire and a scan line doubling as a gate electrode for the aforementioned insulating gate type transistor, and a pixel electrode connected to a drain wire are arranged in a two-dimensional matrix on a main surface and a second transparent insulating substrate or color filter opposite the aforementioned first transparent insulating substrate, wherein:

a source wire of an insulating gate type transistor comprising a laminate made of a transparent conductive layer and a low resistance metal layer is connected to a first semiconductor layer not containing impurities for forming a channel through a second semiconductor layer containing impurities and a heat resistant metal layer, and a transparent conductive pixel electrode is connected to the aforementioned first semiconductor layer through a second semiconductor layer containing impurities and a heat resistant metal layer.

View all claims

2 Assignments

Timeline View

Assignment View

0 Petitions

Accused Products

Abstract

When the channel length is shortened in a conventional manufacturing method with a reduced numbers of processes, the manufacturing margin is decreased, causing a lower yield. A four-mask process and a three-mask process proposal are constructed for a TN type liquid crystal display device made by combining a novel technology for streamlining the signal wire formation process and pixel electrode formation process by adopting a half-tone exposure technology, a novel technology for streamlining the electrode terminal protective layer formation process by adopting a half-tone exposure technology in a publicly known source and drain wiring anodization process, and a novel technology for streamlining the scan line formation process and the semiconductor layer formation process, the scan line formation process and the etch stop layer formation process, and the scan line formation process and the contact formation process.

Citations

50 Claims

1. A liquid crystal display device made by filling liquid crystal between a first transparent insulating substrate (an active substrate) in which unit pixels having at least an insulating gate type transistor, a signal line doubling as a source wire and a scan line doubling as a gate electrode for the aforementioned insulating gate type transistor, and a pixel electrode connected to a drain wire are arranged in a two-dimensional matrix on a main surface and a second transparent insulating substrate or color filter opposite the aforementioned first transparent insulating substrate, wherein:
- a source wire of an insulating gate type transistor comprising a laminate made of a transparent conductive layer and a low resistance metal layer is connected to a first semiconductor layer not containing impurities for forming a channel through a second semiconductor layer containing impurities and a heat resistant metal layer, and a transparent conductive pixel electrode is connected to the aforementioned first semiconductor layer through a second semiconductor layer containing impurities and a heat resistant metal layer.
- View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
- - 2. The display device recited in claim 1 made by filling liquid crystal between a first transparent insulating substrate (active substrate) and a second transparent insulating substrate or color filter opposite the aforementioned first transparent insulating substrate, wherein at least;
    - a scan line comprising a first metal layer of one or more layers is formed on a main surface of a first transparent insulating substrate, a first semiconductor layer not containing impurities is formed in an island form through a gate insulating layer of one or more layers above a gate electrode, a protective insulating layer is formed finer than the aforementioned gate electrode on the first semiconductor layer, an opening is formed in a gate insulating layer on a scan line to expose a part of the scan line in the opening outside an image display region, a pair of source and drain electrodes comprising a laminate of a heat resistant metal layer and a second semiconductor layer containing impurities is formed on a part of the aforementioned protective insulating layer and on a first semiconductor layer, a signal line comprising a laminate made of a low resistance metal layer having a photosensitive organic insulating layer on its surface and a transparent conductive layer is formed on the aforementioned source electrode and gate insulating layer, a transparent conductive pixel electrode is formed on the aforementioned drain electrode and gate insulating layer, and a transparent conductive electrode terminal of a scan line is formed containing the aforementioned opening, and the aforementioned photosensitive organic insulating layer and low resistance metal layer on the signal line are removed outside an image display region to expose a transparent conductive electrode terminal of a signal line.
  - 3. The liquid crystal display device recited in claim 1 made by filling liquid crystal between a first transparent insulating substrate (active substrate) and a second transparent insulating substrate or color filter opposite the aforementioned first transparent insulating substrate, wherein at least;
    - a scan line comprising a first metal layer of one or more layers is formed on a main surface of a first transparent insulating substrate, a first semiconductor layer not containing impurities is formed in an island form through a gate insulating layer of one or more layers above a gate electrode, a protective insulating layer is formed finer than the aforementioned gate electrode on the first semiconductor layer, an opening is formed in a gate insulating layer on a scan line to expose a part of the scan line in the opening outside an image display region, a pair of source and drain electrodes comprising a laminate made of an anodizable heat resistant metal layer having an anodized layer on its side and a second semiconductor layer containing impurities and having a silicon oxide layer on its side is formed on a part of the aforementioned protective insulating layer and on a first semiconductor layer except in a region where a pixel electrode and a signal line overlap, a signal line comprising a laminate made of an anodizable low resistance metal layer having an anodized layer on its surface and a transparent conductive layer is formed on the aforementioned source electrode and gate insulating layer, and a transparent conductive pixel electrode is formed on the aforementioned drain electrode and gate insulating layer, and a transparent conductive electrode terminal of a scan line is formed containing the aforementioned opening, and an anodized layer and a low resistance metal layer on the aforementioned signal line are removed outside an image display region to expose a transparent conductive electrode terminal of a signal line.
  - 4. The liquid crystal display device recited in claim 1 made by filling liquid crystal between a first transparent insulating substrate (active substrate) and a second transparent insulating substrate or color filter opposite the aforementioned transparent insulating substrate, wherein at least;
    - a scan line comprising a first metal layer of one or more layers is formed on a main surface of a first transparent insulating substrate, a first semiconductor layer not containing impurities is formed in an island form through a gate insulating layer of one or more layers above a gate electrode, a protective insulating layer is formed finer than the aforementioned gate electrode on the first semiconductor layer, an opening is formed in a gate insulating layer on a scan line to expose a part of the scan line in the opening outside an image display region, a pair of source and drain electrodes comprising a laminate of a heat resistant metal layer and a second semiconductor layer containing impurities is formed on a part of the aforementioned protective insulating layer and on a first semiconductor layer, a signal line comprising a laminate made of a low resistance metal layer having a photosensitive organic insulating layer on its surface and a transparent conductive layer is formed on the aforementioned source electrode and gate insulating layer, a transparent conductive pixel electrode is formed on the aforementioned drain electrode and gate insulating layer, and a transparent conductive electrode terminal of a scan line is formed on an intermediate electrode comprising a laminate of a heat resistant metal layer and a second semiconductor layer formed containing the aforementioned opening and a first semiconductor layer in its periphery, and the aforementioned photosensitive organic insulating layer and low resistance metal layer on the signal line are removed outside an image display region to expose a transparent conductive electrode terminal of a signal line.
  - 5. The liquid crystal display device recited in claim 1 made by filling liquid crystal between a first transparent insulating substrate (active substrate) and a second transparent insulating substrate or color filter opposite the aforementioned transparent insulating substrate, wherein at least;
    - a scan line comprising a first metal layer of one or more layers is formed on a main surface of a first transparent insulating substrate, a first semiconductor layer not containing impurities is formed in an island form through a gate insulating layer of one or more layers above a gate electrode, a protective insulating layer is formed finer than the aforementioned gate electrode on the first semiconductor layer, an opening is formed in a gate insulating layer on a scan line to expose a part of the scan line in the opening outside an image display region, a pair of source and drain electrodes comprising a laminate made of an anodizable heat resistant metal layer having an anodized layer on its side and a second semiconductor layer containing impurities and having a silicon oxide layer on its side is formed on a part of the aforementioned protective insulating layer and on a first semiconductor layer except in a region where a pixel electrode and a signal line overlap, a signal line comprising a laminate made of an anodizable low resistant metal layer having an anodized layer on its surface and a transparent conductive layer is formed on the aforementioned source electrode and gate insulating layer, a transparent conductive pixel electrode is formed on the aforementioned drain electrode and gate insulating layer, and a transparent conductive electrode terminal of a scan line is formed on an intermediate electrode comprising a laminate of a heat resistant metal layer and a second semiconductor layer formed containing the aforementioned opening and a first semiconductor layer in its periphery, and an anodized layer and a low resistance metal layer on the aforementioned signal line are removed outside an image display region to expose a transparent conductive electrode terminal of a signal line.
  - 6. The liquid crystal display device recited in claim 1 made by filling liquid crystal between a first transparent insulating substrate (active substrate) and a second transparent insulating substrate or color filter opposite the aforementioned transparent insulating substrate, wherein at least;
    - a scan line having an insulating layer in a side thereof and comprising a first metal layer of one or more layers is formed on a main surface of a first transparent insulating substrate, a gate insulating layer of one or more layers is formed on the aforementioned scan line, a first semiconductor layer not containing impurities is formed in an island form on a gate insulating layer above a gate electrode, a protective insulating layer is formed finer than the aforementioned gate electrode on the first semiconductor layer, an opening is formed in a gate insulating layer on a scan line to expose a part of the scan line in the opening outside an image display region, a pair of source and drain electrodes comprising a laminate of a heat resistant metal layer and a second semiconductor layer containing impurities is formed on a part of the aforementioned protective insulating layer, on a first semiconductor layer and on a first transparent insulating substrate, a signal line comprising a laminate made of a low resistance metal layer having a photosensitive organic insulating layer on its surface and a transparent conductive layer is formed on the aforementioned source electrode and a first transparent insulating substrate, a transparent conductive pixel electrode is formed on the aforementioned drain electrode and on a first transparent insulating substrate, and a transparent conductive electrode terminal of a scan line is formed on an intermediate electrode comprising a laminate made of a heat resistant metal layer and a second semiconductor layer formed containing the aforementioned opening and a protective insulating layer and a first semiconductor layer in the periphery of the opening, and the aforementioned photosensitive organic insulating layer and low resistance metal layer on the signal line are removed outside an image display region to expose a transparent conductive electrode terminal of a signal line.
  - 7. The liquid crystal display device recited in claim 1 made by filling liquid crystal between a first transparent insulating substrate (active substrate) and a second transparent insulating substrate or color filter opposite the aforementioned transparent insulating substrate, wherein at least;
    - a scan line having an insulating layer in a side thereof and comprising a first metal layer of one or more layers is formed on a main surface of a first transparent insulating substrate, a gate insulating layer of one or more layers is formed on the aforementioned scan line, a first semiconductor layer not containing impurities is formed in an island form on a gate insulating layer above a gate electrode, a protective insulating layer is formed finer than the aforementioned gate electrode on the first semiconductor layer, an opening is formed in a gate insulating layer on a scan line to expose a part of the scan line in the opening outside an image display region, a pair of source and drain electrodes comprising a laminate made of an anodizable heat resistant metal layer having an anodized layer on its side and a second semiconductor layer containing impurities and having a silicon oxide layer on its side is formed on a part of the aforementioned protective insulating layer, on a first semiconductor layer and on a first transparent insulating substrate except in a region where a pixel electrode and a signal line overlap, a signal line comprising a laminate made of an anodizable low resistance metal layer having an anodized layer on its surface and a transparent conductive layer is formed on the aforementioned source electrode and a first transparent insulating substrate, a transparent conductive pixel electrode is formed on the aforementioned drain electrode and a first transparent insulating substrate, and a transparent conductive electrode terminal of a scan line is formed on an intermediate electrode comprising a laminate made of a heat resistant metal layer and a second semiconductor layer formed containing the aforementioned opening, a protective insulating layer and a first semiconductor layer in the periphery of the opening, and an anodized layer and a low resistance metal layer on the aforementioned signal line are removed outside an image display region to expose a transparent conductive electrode terminal of a signal line.
  - 8. The liquid crystal display device recited in claim 1 made by filling liquid crystal between a first transparent insulating substrate (active substrate) and a second transparent insulating substrate or color filter opposite the aforementioned transparent insulating substrate, wherein at least;
    - a scan line having an insulating layer in a side thereof and comprising a first metal layer of one or more layers is formed on a main surface of a first transparent insulating substrate, a gate insulating layer of one or more layers is formed on the aforementioned scan line, a first semiconductor layer not containing impurities is formed in an island form on a gate insulating layer above a gate electrode, a protective insulating layer is formed finer than the aforementioned gate electrode on the first semiconductor layer, an opening is formed in a gate insulating layer on a scan line to expose a part of the scan line in the opening outside an image display region, a pair of source and drain electrodes comprising a laminate of a heat resistant metal layer and a second semiconductor layer containing impurities is formed on a part of the aforementioned protective insulating layer, on a first semiconductor layer and on a first transparent insulating substrate, a signal line comprising a laminate made of a low resistance metal layer having a photosensitive organic insulating layer on its surface and a transparent conductive layer is formed on the aforementioned source electrode and a first transparent insulating substrate, a transparent conductive pixel electrode is formed on the aforementioned drain electrode and a first transparent insulating substrate, and a transparent conductive electrode terminal of a scan line is formed containing the aforementioned opening, and the aforementioned photosensitive organic insulating layer and low resistance metal layer on the signal line are removed outside an image display region to expose a transparent conductive electrode terminal of a signal line.
  - 9. The liquid crystal display device recited in claim 1 made by filling liquid crystal between a first transparent insulating substrate (active substrate) and a second transparent insulating substrate or color filter opposite the aforementioned transparent insulating substrate, wherein at least;
    - a scan line having an insulating layer in a side thereof and comprising a first metal layer of one or more layers is formed on a main surface of a first transparent insulating substrate, a gate insulating layer of one or more layers is formed on the aforementioned scan line, a first semiconductor layer not containing impurities is formed in an island form on a gate insulating layer above a gate electrode, a protective insulating layer is formed finer than the aforementioned gate electrode on the first semiconductor layer, an opening is formed in a gate insulating layer on a scan line to expose a part of the scan line in the opening outside an image display region, a pair of source and drain electrodes comprising a laminate made of an anodizable heat resistant metal layer having an anodized layer on its side and a second semiconductor layer containing impurities and having a silicon oxide layer on its side is formed on a part of the aforementioned protective insulating layer, on a first semiconductor layer and on a first transparent insulating substrate except in a region where a pixel electrode and a signal line overlap, a signal line comprising a laminate made of an anodizable low resistance metal layer having an anodized layer on its surface and a transparent conductive layer is formed on the aforementioned source electrode and a first transparent insulating substrate, a transparent conductive pixel electrode is formed on the aforementioned drain electrode and a first transparent insulating substrate, and a transparent conductive electrode terminal of a scan line is formed containing the aforementioned opening, and an anodized layer and a low resistance metal layer on the aforementioned signal line are removed outside an image display region to expose a transparent conductive electrode terminal of a signal line.
  - 10. The liquid crystal display device recited in claim 1 made by filling liquid crystal between a first transparent insulating substrate (active substrate) and a second transparent insulating substrate or color filter opposite the aforementioned transparent insulating substrate, wherein at least:
    - a scan line having an insulating layer in a side thereof and comprising a first metal layer of one or more layers is formed on a main surface of a first transparent insulating substrate, a gate insulating layer of one or more layers is formed on the aforementioned scan line, a first semiconductor layer not containing impurities is formed in an island form on a gate insulating layer above a gate electrode, a protective insulating layer is formed finer than the aforementioned gate electrode on the first semiconductor layer, an opening is formed in a gate insulating layer on a scan line to expose a part of the scan line in the opening outside an image display region, a pair of source and drain electrodes comprising a laminate of a heat resistant metal layer and a second semiconductor layer containing impurities is formed on a part of the aforementioned protective insulating layer and on a first semiconductor layer, a signal line comprising a laminate made of a low resistance metal layer having a photosensitive organic insulating layer on its surface and a transparent conductive layer is formed on the aforementioned source electrode and a first transparent insulating substrate, a transparent conductive pixel electrode is formed on the aforementioned drain electrode and a first transparent insulating substrate, and a transparent conductive electrode terminal of a scan line is formed containing the aforementioned opening, and a heat resistant metal layer, a second semiconductor layer and a first semiconductor layer in the periphery of the opening, and the aforementioned photosensitive organic insulating layer and low resistance metal layer on the signal line are removed outside an image display region to expose a transparent conductive electrode terminal of a signal line.
  - 11. The liquid crystal display device recited in claim 1 made by filling liquid crystal between a first transparent insulating substrate (active substrate) and a second transparent insulating substrate or color filter opposite the aforementioned transparent insulating substrate, wherein at least:
    - a scan line having an insulating layer in a side thereof and comprising a first metal layer of one or more layers is formed on a main surface of a first transparent insulating substrate, a gate insulating layer of one or more layers is formed on the aforementioned scan line, a first semiconductor layer not containing impurities is formed in an island form on a gate insulating layer above a gate electrode, a protective insulating layer is formed finer than the aforementioned gate electrode on the first semiconductor layer, an opening is formed in a gate insulating layer on a scan line to expose a part of the scan line in the opening outside an image display region, a pair of source and drain electrodes comprising a laminate made of an anodizable heat resistant metal layer having an anodized layer on its side and a second semiconductor layer containing impurities and having a silicon oxide layer on its side is formed on a part of the aforementioned protective insulating layer and on a first semiconductor layer except in a region where a pixel electrode and a signal line overlap, a signal line comprising a laminate made of an anodizable low resistance metal layer having an anodized layer on its surface and a transparent conductive layer is formed on the aforementioned source electrode and a first transparent insulating substrate, a transparent conductive pixel electrode is formed on the aforementioned drain electrode and a first transparent insulating substrate, and a transparent conductive electrode terminal of a scan line is formed containing the aforementioned opening, a heat resistant metal layer, a second semiconductor layer, and a first semiconductor layer (having an anodized layer and silicon oxide layer in the side respectively) in the periphery of the opening, and an anodized layer and a low resistance metal layer on a signal line are removed outside an image display region to expose a transparent conductive electrode terminal of a signal line.
  - 12. The liquid crystal display device recited in claim 1 made by filling liquid crystal between a first transparent insulating substrate (active substrate) and a second transparent insulating substrate or color filter opposite the aforementioned transparent insulating substrate, wherein at least:
    - a scan line comprising a first metal layer of one or more layers is formed on a main surface of a first transparent insulating substrate, a first semiconductor layer not containing impurities is formed in an island form through a gate insulating layer of one or more layers above a gate electrode, a pair of source and drain electrodes comprising a laminate made of a second semiconductor layer containing impurities and a heat resistant metal layer is formed on the aforementioned first semiconductor layer, an opening is formed in a gate insulating layer on a scan line to expose a part of the scan line in the opening outside an image display region, a signal line comprising a laminate made of a low resistance metal layer and a transparent conductive layer is formed on the aforementioned source electrode and gate insulating layer, a transparent conductive pixel electrode is formed on the aforementioned drain electrode and gate insulating layer, an electrode terminal of a scan line comprising a laminate made of a low resistance metal layer and a transparent conductive layer or a transparent conductive layer is formed containing the aforementioned opening, and an electrode terminal of a signal line comprising a laminate made of a low resistance metal layer and a transparent conductive layer or a transparent conductive layer comprising a part of the signal line is formed outside an image display part region, and passivating insulating layer having openings on the aforementioned pixel electrode and on the aforementioned electrode terminals of the scan line and signal line is formed on the aforementioned first transparent insulating substrate.
  - 13. The liquid crystal display device recited in claim 1 made by filling liquid crystal between a first transparent insulating substrate (active substrate) and a second transparent insulating substrate or color filter opposite the aforementioned transparent insulating substrate, wherein at least:
    - a scan line comprising a first metal layer of one or more layers is formed on a main surface of a first transparent insulating substrate, a first semiconductor layer not containing impurities is formed in an island form through a gate insulating layer of one or more layers above a gate electrode, a pair of source and drain electrodes comprising a laminate made of an anodizable heat resistant metal layer having an anodized layer on its side and a second semiconductor layer containing impurities and having a silicon oxide layer on its side is formed on the aforementioned first semiconductor layer except in a region where a pixel electrode and a signal line overlap, a silicon oxide layer is formed on a first semiconductor layer between the aforementioned source and drain electrodes, an opening is formed in a gate insulating layer on a scan line to expose a part of the scan line in the opening outside an image display region, a signal line comprising a laminate made of an anodizable low resistance metal layer having an anodized layer on its surface and a transparent conductive layer is formed on the aforementioned source electrode and gate insulating layer, a transparent conductive pixel electrode is formed on the aforementioned drain electrode and gate insulating layer, a transparent conductive electrode terminal of a scan line is formed containing the aforementioned opening, and an anodized layer and a low resistance metal layer on a signal line are removed outside an image display region to expose a transparent conductive electrode terminal of a signal line.
  - 14. The liquid crystal display device recited in claim 1 made by filling liquid crystal between a first transparent insulating substrate (active substrate) and a second transparent insulating substrate or color filter opposite the aforementioned transparent insulating substrate, wherein at least:
    - a scan line having an insulating layer in a side thereof and comprising a first metal layer of one or more layers is formed on a main surface of a first transparent insulating substrate, a gate insulating layer of one or more layers is formed on the aforementioned scan line, a first semiconductor layer not containing impurities is formed in an island form on a gate insulating layer above a gate electrode, a pair of source and drain electrodes comprising a laminate made of a second semiconductor layer containing impurities and a heat resistant metal layer is formed on the aforementioned first semiconductor layer, an opening is formed in a gate insulating layer on a scan line to expose a part of the scan line in the opening outside an image display region, a signal line comprising a laminate made of a low resistance metal layer and a transparent conductive layer is formed on the aforementioned source electrode and first transparent insulating substrate, and a transparent conductive pixel electrode is formed on the aforementioned drain electrode and a first transparent insulating substrate, an electrode terminal of a scan line comprising a laminate made of a low resistance metal layer and a transparent conductive layer or a transparent conductive layer is formed containing the aforementioned opening and a heat resistant metal layer, a second semiconductor layer and a first semiconductor layer in the periphery of the opening, and an electrode terminal of a signal line comprising a laminate made of a low resistance metal layer and a transparent conductive layer or a transparent conductive layer comprising a part of a signal line is formed outside an image display part region, and a passivating insulating layer having openings on the aforementioned pixel electrode and on the aforementioned electrode terminals of the scan line and the signal line is formed on the aforementioned first transparent insulating substrate.
  - 15. The liquid crystal display device recited in claim 1 made by filling liquid crystal between a first transparent insulating substrate (active substrate) and a second transparent insulating substrate or color filter opposite the aforementioned transparent insulating substrate, wherein at least:
    - a scan line having an insulating layer in a side thereof and comprising a first metal layer of one or more layers is formed on a main surface of a first transparent insulating substrate, a gate insulating layer of one or more layers is formed on the aforementioned scan line, a first semiconductor layer not containing impurities is formed in an island form on a gate insulating layer above a gate electrode, a pair of source and drain electrodes comprising a laminate made of an anodizable heat resistant metal layer having an anodized layer on its side and a second semiconductor layer containing impurities and having a silicon oxide layer on its side is formed on the aforementioned first semiconductor layer except in a region where a pixel electrode and a-signal line overlap, a silicon oxide layer is formed on a first semiconductor layer between the aforementioned source and drain electrodes, an opening is formed in a gate insulating layer on a scan line to expose a part of the scan line in the opening outside an image display region, a signal line comprising a laminate made of an anodizable low resistance metal layer having an anodized layer on its surface and a transparent conductive layer is formed on the aforementioned source electrode and a first transparent insulating substrate, a transparent conductive pixel electrode is formed on the aforementioned drain electrode and a first transparent insulating substrate, and a transparent conductive electrode terminal of a scan line is formed containing the aforementioned opening, and a heat resistant metal layer, a second semiconductor layer and a first semiconductor layer in the periphery of the opening, and an anodized layer and a low resistance metal layer on a signal line are removed outside an image display region to expose a transparent conductive electrode terminal of a signal line.
  - 16. The liquid crystal display device recited in claim 1 made by filling liquid crystal between a first transparent insulating substrate (active substrate) and a second transparent insulating substrate or color filter opposite the aforementioned transparent insulating substrate, wherein at least:
    - a scan line having an insulating layer in a side thereof and comprising a first metal layer of one or more layers is formed on a main surface of a first transparent insulating substrate, a gate insulating layer of one or more layers is formed on the aforementioned scan line, a first semiconductor layer not containing impurities is formed in an island form on a gate insulating layer above a gate electrode, a pair of source and drain electrodes comprising a laminate made of a second semiconductor layer containing impurities and a heat resistant metal layer is formed on the aforementioned first semiconductor layer, an opening is formed in a gate insulating layer on a scan line to expose a part of the scan line in the opening outside an image display region, a signal line comprising a laminate made of a low resistance metal layer and a transparent conductive layer is formed on the aforementioned source electrode and first transparent insulating substrate, and a transparent conductive pixel electrode is formed on the aforementioned drain electrode and a first transparent insulating substrate, an electrode terminal of a scan line comprising a laminate made of a low resistance metal layer and transparent conductive layer or a transparent conductive layer is formed containing the aforementioned opening, and an electrode terminal of a signal line comprising a laminate made of a low resistance metal layer and a transparent conductive layer or a transparent conductive layer comprising a part of a signal line is formed outside an image display region, and a passivating insulating layer having openings on the aforementioned pixel electrode and on the aforementioned electrode terminals of the scan line and the signal line is formed on the aforementioned first transparent insulating substrate.
  - 17. The liquid crystal display device recited in claim 1 made by filling liquid crystal between a first transparent insulating substrate (active substrate) and a second transparent insulating substrate or color filter opposite the aforementioned transparent insulating substrate, wherein at least:
    - a scan line having an insulating layer in a side thereof and comprising a first metal layer of one or more layers is formed on a main surface of a first transparent insulating substrate, a gate insulating layer of one or more layers is formed on the aforementioned scan line, a first semiconductor layer not containing impurities is formed in an island form on a gate insulating layer above a gate electrode, a pair of source and drain electrodes comprising a laminate made of an anodizable heat resistant metal layer having an anodized layer on its side and a second semiconductor layer containing impurities and having a silicon oxide layer on its side is formed on the aforementioned first semiconductor layer except in a region where a pixel electrode and a signal line overlap, a silicon oxide layer is formed on a first semiconductor layer between the aforementioned source and drain electrodes, an opening is formed in a gate insulating layer on a scan line to expose a part of the scan line in the opening outside an image display region, a signal line comprising a laminate made of an anodizable low resistance metal layer having an anodized layer on its surface and a transparent conductive layer is formed on the aforementioned source electrode and a first transparent insulating substrate, a transparent conductive pixel electrode is formed on the aforementioned drain electrode and a first transparent insulating substrate, and a transparent conductive electrode terminal of a scan line is formed containing the aforementioned opening, and an anodized layer and a low resistance metal layer on a signal line are removed outside an image display region to expose a transparent electrode terminal of a signal line.
  - 18. The liquid crystal display device recited in claim 1 made by filling liquid crystal between a first transparent insulating substrate (active substrate) and a second transparent insulating substrate or color filter opposite the aforementioned transparent insulating substrate, wherein at least:
    - a scan line having an insulating layer in a side thereof and comprising a first metal layer of one or more layers is formed on a main surface of a first transparent insulating substrate, a gate insulating layer of one or more layers is formed on the aforementioned scan line, a first semiconductor layer not containing impurities is formed in an island form slightly smaller than the aforementioned gate insulating layer on a gate insulating layer above gate electrode, a pair of source and drain electrodes comprising a laminate made of a second semiconductor layer containing impurities and a heat resistant metal layer is formed on the aforementioned first semiconductor layer, an opening is formed in a gate insulating layer on a scan line to expose a part of the scan line in the opening outside an image display region, a signal line comprising a laminate made of a low resistance metal layer and a transparent conductive layer is formed on the aforementioned source electrode and first transparent insulating substrate, and a transparent conductive pixel electrode is formed on the aforementioned drain electrode and a first transparent insulating substrate, an electrode terminal of a scan line comprising a laminate made of a low resistance metal layer and a transparent conductive layer or a transparent conductive layer is formed containing the aforementioned opening, and an electrode terminal of a signal line comprising a laminate made of a low resistance metal layer and a transparent conductive layer or a transparent conductive layer comprising a part of a signal line is formed outside an image display region, and a passivating insulating layer having openings on the aforementioned pixel electrode and on the aforementioned electrode terminals of the scan line and the signal line is formed on the aforementioned first transparent insulating substrate.
  - 19. The liquid crystal display device recited in claim 1 made by filling liquid crystal between a first transparent insulating substrate (active substrate) and a second transparent insulating substrate or color filter opposite the aforementioned transparent insulating substrate, wherein at least:
    - a scan line having an insulating layer in a side thereof and comprising a first metal layer of one or more layers is formed on a main surface of a first transparent insulating substrate, a gate insulating layer of one or more layers is formed on the aforementioned scan line, a first semiconductor layer not containing impurities is formed in an island form slightly smaller than the aforementioned gate insulating layer on a gate insulating layer above a gate electrode, a pair of source and drain electrodes is formed comprising a laminate made of an anodizable heat resistant metal layer having an anodized layer on its side and a second semiconductor layer containing impurities and having a silicon oxide layer on its side is formed on the aforementioned first semiconductor layer except in a region where a pixel electrode and a signal line overlap, a silicon oxide layer is formed on a first semiconductor layer between the aforementioned source and drain electrodes, an opening is formed in a gate insulating layer on a scan line to expose a part of the scan line in the opening outside an image display region, a signal line comprising a laminate made of a transparent conductive layer and an anodizable low resistance metal layer having an anodized layer on its surface is formed on the aforementioned source electrode and a first transparent insulating substrate, a transparent conductive pixel electrode is formed on the aforementioned drain electrode and a first transparent insulating substrate, and a transparent conductive electrode terminal of a scan line is formed containing the aforementioned opening, and an anodized layer and a low resistance metal layer on a signal line are removed outside an image display region to expose a transparent conductive electrode terminal of a signal line.
  - 20. The liquid crystal display device recited in claim 1 made by filling liquid crystal between a first transparent insulating substrate (active substrate) and a second transparent insulating substrate or color filter opposite the aforementioned transparent insulating substrate, wherein at least:
    - a scan line having an insulating layer in a side thereof and comprising a first metal layer of one or more layers is formed on a main surface of a first transparent insulating substrate, a first semiconductor layer not including impurities and a gate insulating layer of at least one layer are formed in an island form at a proximity of an intersection of a signal line and a scan line and on a gate electrode, a pair of source and drain electrodes comprising a laminate made of a heat resistant metal layer and a second semiconductor layer containing impurities is formed on the aforementioned first semiconductor layer above a gate electrode, and a heat resistant metal layer and a second semiconductor containing impurities are formed on a first semiconductor layer at an intersection of a scan line and a signal line, a signal line comprising a laminate of a transparent conductive layer and a low resistance metal layer is formed on the aforementioned source electrode, on a first transparent insulating substrate, and on a heat resistant metal layer at an intersection of a signal line and a scan line, a transparent conductive pixel electrode is formed on the aforementioned drain electrode and on a first transparent insulating substrate, an electrode terminal for a scan line comprising a laminate made of a low resistance metal layer and a transparent conductive layer or a transparent conductive layer is formed on a part of a scan line outside an image display region, and an electrode terminal for a signal line comprising a laminate made of a low resistance metal layer and a transparent conductive layer or a transparent conductive layer comprising a part of signal line is formed outside an image display region, and a passivating insulating layer having openings on the aforementioned pixel electrode and on the aforementioned electrode terminals of the scan line and the signal line is formed on the aforementioned first transparent insulating substrate.
  - 21. The liquid crystal display device recited in claim 1 made by filling liquid crystal between a first transparent insulating substrate (active substrate) and a second transparent insulating substrate or color filter opposite the aforementioned transparent insulating substrate, wherein at least:
    - a scan line having an insulating layer in its side comprising an anodizable first metal layer of one or more layers is formed on a main surface of a first transparent insulating substrate, a first semiconductor layer not containing impurities and a gate insulating layer of at least one layer are formed in an island form at a proximity of an intersection of a signal line and a scan line and on a gate electrode, a pair of source and drain electrodes comprising a laminate made of an anodizable heat resistant metal layer having an anodized layer on its side and a second semiconductor layer containing impurities and having a silicon oxide layer on its side is formed on a first semiconductor layer above a gate electrode except in a region where a pixel electrode and a signal line overlap, and a silicon oxide layer is formed on a first semiconductor layer at a proximity of an intersection of a signal line and a scan line except an intersection of a scan line and a signal line, and a heat resistant metal layer having an anodizable layer in its side and a second semiconductor layer having a silicon oxide layer in its side are formed on a first semiconductor layer at an intersection of a scan line and a signal line, a silicon oxide layer is formed on the aforementioned first semiconductor layer between the source and drain electrodes, a signal line comprising a laminate made of a transparent conductive layer and an anodizable low resistance metal layer having an anodized layer on its surface is formed on the aforementioned source electrode, on a first transparent insulating substrate and on a heat resistant metal layer at the aforementioned intersection of a signal line and a scan line, a transparent conductive pixel electrode is formed on the aforementioned drain electrode and on a first transparent insulating substrate, and a transparent conductive electrode terminal of a scan line is formed on a part of a scan line outside an image display region, an anodizable layer is formed on a scan line except for the aforementioned electrode terminal of the scan line, and an anodized layer and a low resistance metal layer on a signal line are removed outside an image display region to expose a transparent conductive electrode terminal of a signal line.
  - 22. A liquid crystal display device recited in claim 6 characterized by the fact that an insulating layer formed in a side of a scan line is an organic insulating layer.
  - 23. A liquid crystal display device recited in claim 6 characterized by the fact that a first metal layer comprises an anodizable metal layer and that the insulating layer formed in the side of the scan line is an anodized layer.

24. A manufacturing method for a liquid crystal display device made by filling liquid crystal between a first transparent insulating substrate (active substrate) and a second transparent insulating substrate opposing the aforementioned first transparent insulating substrate or a color filter, wherein, formation of source and drain lines and a pixel electrode comprise:
- a process for forming a photosensitive organic insulating layer pattern thicker at a signal line than other regions corresponding to a source wire (signal line), a drain wire comprising a pixel electrode, an electrode terminal of a scan line, and an electrode terminal of a signal line comprising a part of a signal line after depositing a transparent conductive layer and a low resistance metal layer, a process for forming electrode terminals for a scan line and a signal line, and source and drain wires using the aforementioned photosensitive organic insulating layer pattern as a mask, a process for decreasing a thickness of the aforementioned photosensitive organic insulating layer pattern to expose a low resistance metal layer on electrode terminals for a scan line and a signal line and on a pixel electrode, and a process for removing an exposed low resistance metal layer using the aforementioned photosensitive organic insulating layer pattern whose thickness was reduced as a mask, and forming a transparent conductive pixel electrode and transparent conductive electrode terminals of a scan line and a signal line.
- View Dependent Claims (27, 29, 31, 33, 35, 37)
- - 27. A manufacturing method of the liquid crystal display device recited in claim 24, comprising at least, a process for forming at least a scan line comprising a metal layer of one or more layers on a main surface of a first transparent insulating substrate, a process for successively depositing a gate insulating layer of at least one layer, a first amorphous silicon layer not containing impurities, and a protective insulating layer, a process for forming a protective insulating layer narrower than a gate electrode above a gate electrode to expose the aforementioned first amorphous silicon layer, a process for depositing a second amorphous silicon layer containing impurities and a heat resistant metal layer, a process for forming a first amorphous silicon layer, a second amorphous silicon layer, and a heat resistant metal layer in an island form wider than a gate electrode above a gate electrode to expose a gate insulating layer, a process to form an opening in a gate insulating layer on a scan line outside an image display region to expose a part of a scan line, a process for forming a photosensitive organic insulating layer pattern thicker at a signal line than other regions corresponding to a source wire (signal line) and a drain wire comprising a pixel electrode both such as to partially overlap the aforementioned protective insulating layer, an electrode terminal of a scan line containing the aforementioned opening, and an electrode terminal of a signal line comprising a part of a signal line outside an image display region after depositing a transparent conductive layer and a low resistance metal layer, a process for selectively removing a low resistance metal layer, a transparent conductive layer, a heat resistant metal layer, a second amorphous silicon layer, and a first amorphous silicon layer using the aforementioned photosensitive organic insulating layer pattern as a mask to form source and drain wires, and electrode terminals for a scan line and a signal line, a process for decreasing a thickness of the aforementioned photosensitive organic insulating layer pattern to expose a low resistance metal layer on a pixel electrode and on electrode terminals for a scan line and a signal line and a process for removing an exposed low resistance metal layer using the aforementioned photosensitive organic insulating layer pattern whose thickness was reduced as a mask, and forming a transparent conductive pixel electrode and transparent conductive terminals of a signal line and a signal line.
  - 29. A manufacturing method of the liquid crystal display device recited in claim 24, comprising at least, a process for forming at least a scan line comprising a metal layer of one or more layers on a main surface of a first transparent insulating substrate, a process for successively depositing a gate insulating layer of at least one layer, a first amorphous silicon layer not containing impurities, and a protective insulating layer, a process for forming a protective insulating layer narrower than a gate electrode above a gate electrode to expose the aforementioned first amorphous silicon layer, a process for depositing a second amorphous silicon layer containing impurities and an anodizable heat resistant metal layer, a process for forming a photosensitive resin pattern thicker at a semiconductor layer formation region above a gate electrode than other regions having an opening at a contact formation region of a scan line outside an image display region, a process for removing a heat resistant metal layer, a second amorphous silicon layer and a first amorphous silicon layer in the aforementioned opening using the aforementioned photosensitive resin pattern as a mask to expose a gate insulating layer, a process for reducing a thickness of the aforementioned photosensitive resin pattern to expose the aforementioned heat resistant metal layer, and a process for forming a heat resistant metal layer, a second amorphous silicon layer and a first amorphous silicon layer in an island form wider than a gate electrode above a gate electrode using the aforementioned photosensitive resin pattern whose thickness was reduced as a mask to expose a gate insulating layer as well as for removing a gate insulating layer in the aforementioned opening to expose a part of a scan line, a process for forming a photosensitive organic insulating layer pattern thicker at a signal line than other regions corresponding to a source wire (signal line) and a drain wire comprising a pixel electrode both such as to partially overlap the aforementioned protective insulating layer, an electrode terminal of a scan line containing the aforementioned opening, and an electrode terminal of a signal line comprising a part of a signal line outside an image display region after depositing a transparent conductive layer and a low resistance metal layer, a process for selectively removing a low resistance metal layer, a transparent conductive layer, a heat resistant metal layer, a second amorphous silicon layer and a first amorphous silicon layer using the aforementioned photosensitive organic insulating layer pattern as a mask to form source and drain wires, and electrode terminals for a scan line and a signal line, a process for decreasing a thickness of the aforementioned photosensitive organic insulating layer pattern to expose a low resistance metal layer on a pixel electrode and on electrode terminals for a scan line and a signal line and a process for removing an exposed low resistance metal layer using the aforementioned photosensitive organic insulating layer pattern whose thickness was reduced as a mask, and forming a transparent conductive pixel electrode and transparent conductive electrode terminals of a scan line and a signal line.
  - 31. A manufacturing method of the liquid crystal display device recited in claim 24, comprising at least, a process for forming at least a scan line comprising a metal layer of one or more layers on a main surface of a first transparent insulating substrate, a process for successively depositing a gate insulating layer of at least one layer, a first amorphous silicon layer not containing impurities, and a protective insulating layer, a process for forming a photosensitive resin pattern thicker at a protective insulating layer formation region above a gate electrode than other regions and having an opening at a contact formation region of a scan line, a process for removing a protective insulating layer, a first amorphous silicon layer and a gate insulating layer in the aforementioned opening using the aforementioned photosensitive resin pattern as a mask to expose a part of a scan line, a process for reducing a thickness of the aforementioned photosensitive resin pattern to expose the aforementioned protective insulating layer, a process for leaving a protective insulating layer narrower than a gate electrode above a gate electrode using the aforementioned photosensitive resin pattern whose thickness was reduced as a mask to expose a first amorphous silicon layer, a process for depositing a second amorphous silicon layer containing impurities and a heat resistant metal layer, a process for forming a heat resistant metal layer, a second amorphous silicon layer and a first amorphous silicon layer in an island form wider than a gate electrode above a gate electrode to expose a gate insulating layer as well as forming an intermediate electrode comprising a laminate of a heat resistant metal layer and a second amorphous silicon layer containing the aforementioned opening, a process for forming a photosensitive organic insulating layer pattern thicker at a signal line than other regions corresponding to a source wire (signal line) and a drain wire comprising a pixel electrode both such as to partially overlap the aforementioned protective insulating layer, an electrode terminal of a scan line containing the aforementioned intermediate electrode, and an electrode terminal of a signal line comprising a part of a signal line outside an image display region after depositing a transparent conductive layer and a low resistance metal layer, a process for selectively removing a low resistance metal layer, a transparent conductive layer, a heat resistant metal layer, a second amorphous silicon layer and a first amorphous silicon layer using the aforementioned photosensitive organic insulating layer pattern as a mask to form source and drain wires, and electrode terminals for a scan line and a signal line, a process for decreasing a thickness of the aforementioned photosensitive organic insulating layer pattern to expose a low resistance metal layer on a pixel electrode and on electrode terminals for a scan line and a signal line and, a process for removing an exposed low resistance metal layer using the aforementioned photosensitive organic insulating layer pattern whose thickness was reduced as a mask, and forming a transparent conductive pixel electrode and transparent conductive electrode terminals of a scan line and a signal line.
  - 33. A manufacturing method of the liquid crystal display device recited in claim 24, comprising at least, a process for successively depositing at least a first metal layer of one or more layers, a gate insulating layer of one or more layers, a first amorphous silicon layer not containing impurities and a protective insulating layer on a main surface of a first transparent insulating substrate, a process for forming a photosensitive resin pattern thinner at a contact formation region for a scan line than other regions outside an image display region corresponding to a scan line, a process for successively etching the aforementioned protective insulating layer, a first amorphous silicon layer, a gate insulating layer and a first metal layer using the aforementioned photosensitive resin pattern as a mask, a process for reducing a thickness of the aforementioned photosensitive resin pattern to expose a protective insulating layer in a contact formation region, a process for forming an insulating layer in a side of a scan line, a process for etching a protective insulating layer, a first amorphous silicon layer and a gate insulating layer in the aforementioned contact region using the aforementioned photosensitive resin pattern whose thickness was reduced as a mask to expose a part of a scan line, a process for selectively forming a protective insulating layer narrower than a gate electrode above a gate electrode to expose the aforementioned first amorphous silicon layer, a process for depositing a second amorphous silicon layer containing impurities and a heat resistant metal layer, a process for forming a first amorphous silicon layer, a second amorphous silicon layer, and a heat resistant metal layer in an island form wider than a gate electrode above a gate electrode to expose a first transparent insulating substrate as well as for forming an intermediate electrode comprising a laminate made of a second amorphous silicon layer and a heat resistant metal layer containing the aforementioned contact region, a process for forming a photosensitive organic insulating layer pattern thicker at a signal line than other regions corresponding to a source wire (signal line) and a drain wire comprising a pixel electrode both such as to partially overlap the aforementioned protective insulating layer, an electrode terminal of a scan line containing the aforementioned intermediate electrode, and an electrode terminal of a signal line comprising a part of a signal line outside an image display region after depositing a transparent conductive layer and an low resistance metal layer, a process for selectively removing a low resistance metal, a transparent conductive layer, a heat resistant metal layer, a second amorphous silicon layer and a first amorphous silicon layer using the aforementioned photosensitive organic insulating layer pattern as a mask to form source and drain wires, and electrode terminals for a scan line and a signal line, a process for decreasing a thickness of the aforementioned photosensitive organic insulating layer pattern to expose a low resistance metal layer on a pixel electrode and on electrode terminals for a scan line and a signal line, and a process for removing an exposed low resistance metal layer using the aforementioned photosensitive organic insulating layer pattern whose thickness was reduced as a mask, and forming a transparent conductive pixel electrode and electrode terminals of a scan line and a signal line.
  - 35. A manufacturing method of the liquid crystal display device recited in claim 24, comprising at least, a process for successively depositing at least a first metal layer of one or more layers, a gate insulating layer of one or more layers, a first amorphous silicon layer not containing impurities and a protective insulating layer on a main surface of a first transparent insulating substrate, a process for forming a photosensitive resin pattern thicker at a protective insulating layer formation region above a gate electrode than other regions corresponding to a scan line, a process for successively etching the aforementioned protective insulating layer, a first amorphous silicon layer, a gate insulating layer and a first metal layer using the aforementioned photosensitive resin pattern as a mask, a process for reducing a thickness of the aforementioned photosensitive resin pattern to expose the aforementioned protective insulating layer, a process for leaving a protective insulating layer narrower than a gate electrode above a gate electrode using the aforementioned photosensitive resin pattern whose thickness was reduced as a mask to expose the aforementioned first amorphous silicon layer, a process for forming an insulating layer in a side of a scan line, a process for depositing a second amorphous silicon layer containing impurities and a heat resistant metal layer, a process for forming a photosensitive resin pattern thicker at a semiconductor layer formation region above a gate electrode than other regions having an opening at a contact formation region of a scan line outside an image display region, a process for removing a heat resistant metal layer, a second amorphous silicon layer and a first amorphous silicon layer in the aforementioned opening using the aforementioned photosensitive resin pattern as a mask to expose a gate insulating layer, a process for reducing a thickness of the aforementioned photosensitive resin pattern to expose the aforementioned heat resistant metal layer, a process for forming a first amorphous silicon layer, a second amorphous silicon layer, and a heat resistant metal layer in an island form wider than a gate electrode above a gate electrode using the aforementioned photosensitive resin pattern whose thickness was reduced as a mask to expose a first transparent insulating substrate as well as for removing a gate insulating layer in the aforementioned opening to expose a part of a scan line, a process for forming a photosensitive organic insulating layer pattern thicker at a signal line than other regions corresponding to a source wire (signal line) and a drain wire comprising a pixel electrode both such as to partially overlap the aforementioned protective insulating layer, an electrode terminal of a scan line containing the aforementioned opening, and an electrode terminal of a signal line comprising a part of a signal line outside an image display region after depositing a transparent conductive layer and a low resistance metal layer, a process for selectively removing a low resistance metal layer, a transparent conductive layer, a heat resistant metal layer, a second amorphous silicon layer and a first amorphous silicon layer using the aforementioned photosensitive organic insulating layer pattern as a mask to form source and drain wires, and electrode terminals for a scan line and a signal line, a process for decreasing a thickness of the aforementioned photosensitive organic insulating layer pattern to expose a low resistance metal layer on a pixel electrode and on electrode terminals for a scan line and a signal line, and a process for removing an exposed low resistance metal layer using the aforementioned photosensitive organic insulating layer pattern whose thickness was reduced as a mask, and forming a transparent conductive pixel electrode and transparent conductive electrode terminals of a scan line a signal line.
  - 37. A manufacturing method of the liquid crystal display device recited in claim 24, comprising at least, a process for successively depositing at least a first metal layer of one or more layers, a gate insulating layer of one or more layers, a first amorphous silicon layer not containing impurities and a protective insulating layer on a main surface of a first transparent insulating substrate, a process for selectively forming a protective insulating layer comprising a channel protection layer for a insulating gate type transistor to expose the aforementioned first amorphous silicon layer, a process for depositing a second amorphous silicon layer containing impurities and a heat resistant metal layer, a process for forming a photosensitive resin pattern thinner at a contact formation region for a scan line than other regions corresponding to a scan line outside an image display region, a process for successively etching the aforementioned heat resistant metal layer, a second amorphous silicon layer, a first amorphous silicon layer, a gate insulating layer and a first metal layer using the aforementioned photosensitive resin pattern as a mask, a process for reducing a thickness of the aforementioned photosensitive resin pattern to expose a heat resistant metal layer in a contact formation region, a process for forming an insulating layer in a side of a scan line, a process for etching a heat resistant metal layer, a second amorphous silicon layer, a first amorphous silicon layer and a gate insulating layer in the aforementioned contact region using the aforementioned photosensitive resin pattern whose thickness was reduced as a mask to expose a part of a scan line, a process for forming a photosensitive organic insulating layer pattern thicker at a signal line than other regions corresponding to a source wire (signal line) and a drain wire comprising a pixel electrode both such as to partially overlap the aforementioned protective insulating layer, an electrode terminal of a scan line containing the aforementioned part of a scan line, and an electrode terminal of a signal line comprising a part of a signal line outside an image display region after depositing a transparent conductive layer and a low resistance metal layer, a process for selectively removing a low resistance metal layer, a transparent conductive layer, a heat resistant metal layer, a second amorphous silicon layer and a first amorphous silicon layer using the aforementioned photosensitive organic insulating layer pattern as a mask to form source and drain wires, and electrode terminals for a scan line and a signal line, a process for decreasing a thickness of the aforementioned photosensitive organic insulating layer pattern to expose a low resistance metal layer on a pixel electrode and on electrode terminals for a scan line and a signal line and a process for removing an exposed low resistance metal layer using the aforementioned photosensitive organic insulating layer pattern whose thickness was reduced as a mask, and forming a transparent conductive pixel electrode and transparent electrode terminals of a scan line a signal line.

25. A manufacturing method for a liquid crystal display device made by filling liquid crystal between a first transparent insulating substrate (active substrate) and a second transparent insulating substrate opposing the aforementioned first transparent insulating substrate or a color filter, wherein formation of a pixel electrode and source and drain wires comprise:
- a process for forming a photosensitive resin pattern thinner at a signal line than other regions corresponding to a source wire (signal line), a drain wire comprising a pixel electrode, an electrode terminal of a scan line, and an electrode terminal of a signal line comprising a part of a signal line after depositing a transparent conductive layer and an anodizable low resistance metal layer, a process for forming electrode terminals for a scan line and a signal line, and source and drain wires using the aforementioned photosensitive resin pattern as a mask, a process for decreasing a thickness of the aforementioned photosensitive resin pattern to expose a signal line, a process for forming an anodized layer on an exposed signal line using the aforementioned photosensitive resin pattern whose thickness was reduced as a mask, and a process for removing the aforementioned photosensitive resin pattern whose thickness was reduced, removing a low resistance metal layer using the aforementioned anodized layer as a mask, and forming a transparent conductive pixel electrode and transparent conductive electrode terminals of a scan line and a signal line.
- View Dependent Claims (28, 30, 32, 34, 36, 38, 40, 42, 44, 46, 48, 50)
- - 28. A manufacturing method of the liquid crystal display device recited in claim 25, comprising at least, a process for forming at least a scan line comprising a metal layer of one or more layers on a main surface of a first transparent insulating substrate, a process for successively depositing a gate insulating layer of at least one layer, a first amorphous silicon layer not containing impurities, and a protective insulating layer, a process for forming a protective insulating layer narrower than a gate electrode above a gate electrode to expose the aforementioned first amorphous silicon layer, a process for depositing a second amorphous silicon layer containing impurities and an anodizable heat resistant metal layer, a process for forming a first amorphous silicon layer, a second amorphous silicon layer, and a heat resistant metal layer in an island form wider than a gate electrode above a gate electrode to expose a gate insulating layer, a process to form an opening in a gate insulating layer on a scan line outside an image display region to expose a part of a scan line, a process for forming a photosensitive resin pattern thinner at a signal line than other regions corresponding to a source wire (signal line) and a drain wire comprising a pixel electrode both such as to partially overlap the aforementioned protective insulating layer, an electrode terminal of a scan line containing the aforementioned opening, and an electrode terminal of a signal line comprising a part of a signal line outside an image display region after depositing a transparent conductive layer and an anodizable low resistance metal layer, a process for selectively removing a low resistance metal layer, a transparent conductive layer, a heat resistant metal layer, a second amorphous silicon layer and a first amorphous silicon layer using the aforementioned photosensitive resin pattern as a mask to form source and drain wires and electrode terminals for a scan line and a signal line, a process for decreasing a thickness of the aforementioned photosensitive resin pattern to expose a signal line, a process for forming an anodized layer on an exposed signal line using the aforementioned photosensitive resin pattern whose thickness was reduced as a mask, a process for removing the aforementioned photosensitive resin pattern whose thickness was reduced, removing a low resistance metal layer using the aforementioned anodized layer as a mask, and forming a transparent conductive pixel electrode and transparent conductive terminals of a gate line and a signal line.
  - 30. A manufacturing method of the liquid crystal display device recited in claim 25, comprising at least, a process for forming at least a scan line comprising a metal layer of one or more layers on a main surface of a first transparent insulating substrate, a process for successively depositing a gate insulating layer of at least one layer, a first amorphous silicon layer not containing impurities, and a protective insulating layer, a process for forming a protective insulating layer narrower than a gate electrode above a gate electrode to expose the aforementioned first amorphous silicon layer, a process for depositing a second amorphous silicon layer containing impurities and an anodizable heat resistant metal layer, a process for forming a photosensitive resin pattern thicker at a semiconductor formation region above a gate electrode than other regions having an opening at a contact formation region of a scan line outside an image display region, a process for removing a heat resistant metal layer, a second amorphous silicon layer and a first amorphous silicon layer in the aforementioned opening using the aforementioned photosensitive resin pattern as a mask to expose a gate insulating layer, a process for reducing a thickness of the aforementioned photosensitive resin pattern to expose the aforementioned heat resistant metal layer, a process for forming a heat resistant metal layer, a second amorphous silicon layer and a first amorphous silicon layer in an island form wider than a gate electrode above a gate electrode using the aforementioned photosensitive resin pattern whose thickness was reduced as a mask to expose a gate insulating layer as well as for removing a gate insulating layer in the aforementioned opening to expose a part of a scan line, a process for forming a photosensitive resin pattern thinner at a signal line than other regions corresponding to a source wire (signal line) and a drain wire comprising a pixel electrode both such as to partially overlap the aforementioned protective insulating layer, an electrode terminal of a scan line containing the aforementioned opening, and an electrode terminal of a signal line comprising a part of a signal line outside an image display region after depositing a transparent conductive layer and an anodizable low resistance metal layer, a process for selectively removing a low resistance metal layer, a transparent conductive layer, a heat resistant metal layer, a second amorphous silicon layer and a first amorphous silicon layer using the aforementioned photosensitive resin pattern as a mask to form source and drain wires and electrode terminals for a scan line and a signal line, a process for decreasing a thickness of the aforementioned photosensitive resin pattern to expose a signal line, a process for forming an anodized layer on an exposed signal line using the aforementioned photosensitive resin pattern whose thickness was reduced as a mask, a process for removing the aforementioned photosensitive resin pattern whose thickness was reduced, removing a low resistance metal layer using the aforementioned anodized layer as a mask, and forming a transparent conductive pixel electrode and transparent conductive terminals of a scan line and a signal line.
  - 32. A manufacturing method of the liquid crystal display device recited in claim 25, comprising at least, a process for forming at least a scan line comprising a metal layer of one or more layers on a main surface of a first transparent insulating substrate, a process for successively depositing a gate insulating layer of at least one layer, a first amorphous silicon layer not containing impurities, and a protective insulating layer, a process for forming a photosensitive resin pattern thicker at a protective insulating layer formation region above a gate electrode than other regions having an opening at a contact formation region of a scan line, a process for removing a protective insulating layer, a first amorphous silicon layer and a gate insulating layer in the aforementioned opening using the aforementioned photosensitive resin pattern as a mask to expose a part of a scan line, a process for reducing a thickness of the aforementioned photosensitive resin pattern to expose the aforementioned protective insulating layer, a process for leaving a protective insulating layer narrower than a gate electrode above a gate electrode using the aforementioned photosensitive resin pattern whose thickness was reduced as a mask to expose a first amorphous silicon layer, a process for depositing a second amorphous silicon layer containing impurities and an anodizable heat resistant metal layer, a process for forming a heat resistant metal layer, a second amorphous silicon layer and a first amorphous silicon layer in an island form wider than a gate electrode above a gate electrode to expose a gate insulating layer as well as forming an intermediate electrode comprising a laminate of a heat resistant metal layer and a second amorphous silicon layer containing the aforementioned opening, a process for forming a photosensitive resin pattern thinner at a signal line than other regions corresponding to a source wire (signal line) and a drain wire comprising a pixel electrode both such as to partially overlap the aforementioned protective insulating layer, an electrode terminal of a scan line containing the aforementioned intermediate electrode, and an electrode terminal of a signal line comprising a part of a signal line outside an image display region after depositing a transparent conductive layer and an anodizable low resistance metal layer, a process for selectively removing a low resistance metal layer, a transparent conductive layer, a heat resistant metal layer, a second amorphous silicon layer and a first amorphous silicon layer using the aforementioned photosensitive resin pattern as a mask to form source and drain wires, and electrode terminals for a scan line and a signal line, a process for decreasing a thickness of the aforementioned photosensitive resin pattern to expose a signal line, a process for forming an anodized layer on an exposed signal line using the aforementioned photosensitive resin pattern whose thickness was reduced as a mask, and a process for removing the aforementioned photosensitive resin pattern whose thickness was reduced, removing a low resistance metal layer using the aforementioned anodized layer as a mask, and forming a transparent conductive pixel electrode and transparent conductive electrode terminals of a scan line and a signal line.
  - 34. A manufacturing method of the liquid crystal display device recited in claim 25, comprising at least, a process for successively depositing at least a first metal layer of one or more layers, a gate insulating layer of one or more layers, a first amorphous silicon layer not containing impurities and a protective insulating layer on a main surface of a first transparent insulating substrate, a process for forming a photosensitive resin pattern thinner at a contact formation region for a scan line than other regions outside an image display region corresponding to a scan line, a process for successively etching the aforementioned protective insulating layer, a first amorphous silicon layer, a gate insulating layer and a first metal layer using the aforementioned photosensitive resin pattern as a mask, a process for reducing a thickness of the aforementioned photosensitive resin pattern to expose a protective insulating layer in a contact formation region, a process for forming an insulating layer in a side of a scan line, a process for etching a protective insulating layer, a first amorphous silicon layer and a gate insulating layer in the aforementioned contact region using the aforementioned photosensitive resin pattern whose thickness was reduced as a mask to expose a part of a scan line, a process for selectively forming a protective insulating layer narrower than a gate electrode above a gate electrode to expose the aforementioned first amorphous silicon layer, a process for depositing a second amorphous silicon layer containing impurities and an anodizable heat resistant metal layer, a process for forming a first amorphous silicon layer, a second amorphous silicon layer, and a heat resistant metal layer in an island form wider than a gate electrode above a gate electrode to expose a first transparent insulating substrate and a process for forming an intermediate electrode comprising a laminate made of a second amorphous silicon layer and a heat resistant metal layer containing the aforementioned contact region, a process for forming a photosensitive resin pattern thinner at a signal line than other regions corresponding to a source wire (signal line) and a drain wire comprising a pixel electrode both such as to partially overlap the aforementioned protective insulating layer, an electrode terminal of a scan line containing the aforementioned intermediate electrode, and an electrode terminal of a signal line comprising a part of a signal line outside an image display region after depositing a transparent conductive layer and an anodizable low resistance metal layer, a process for selectively removing a low resistance metal layer, a transparent conductive layer, a heat resistant metal layer, a second amorphous silicon layer, and a first amorphous silicon layer using the aforementioned photosensitive resin pattern as a mask to form source and drain wires, and electrode terminals for a scan line and a signal line, a process for decreasing a thickness of the aforementioned photosensitive resin pattern to expose a signal line, a process for forming an anodized layer on an exposed signal line using the aforementioned photosensitive resin pattern whose thickness was reduced as a mask, a process for removing the aforementioned photosensitive resin pattern whose thickness was reduced, removing a low resistance metal layer using the aforementioned anodized layer as a mask, and forming a transparent conductive pixel electrode and transparent conductive electrode terminals of a scan line and a signal line.
  - 36. A manufacturing method of the liquid crystal display device recited in claim 25, comprising at least, a process for successively depositing at least a first metal layer of one or more layers, a gate insulating layer of one or more layers, a first amorphous silicon layer not containing impurities and a protective insulating layer on a main surface of a first transparent insulating substrate, a process for forming a photosensitive resin pattern thicker at a protective insulating layer formation region above a gate electrode than other regions corresponding to a scan line, a process for successively etching the aforementioned protective insulating layer, a first amorphous silicon layer, a gate insulating layer and a first metal layer using the aforementioned photosensitive resin pattern as a mask, a process for reducing a thickness of the aforementioned photosensitive resin pattern to expose the aforementioned protective insulating layer, a process for leaving a protective insulating layer narrower than a gate electrode above a gate electrode using the aforementioned photosensitive resin pattern whose thickness was reduced as a mask to expose the aforementioned first amorphous silicon layer, a process for forming an insulating layer in a side of a scan line, a process for depositing a second amorphous silicon layer containing impurities and an anodizable heat resistant metal layer, a process for forming a photosensitive resin pattern thicker at a semiconductor layer formation region above a gate electrode than other regions having an opening at a contact formation region of a scan line outside an image display region, a process for removing a heat resistant metal layer, a second amorphous silicon layer and a first amorphous silicon layer in the aforementioned opening using the aforementioned photosensitive resin pattern as a mask to expose a gate insulating layer, a process for reducing a thickness of the aforementioned photosensitive resin pattern to expose the aforementioned heat resistant metal layer, A process for forming a first amorphous silicon layer, a second amorphous silicon layer, and a heat resistant metal layer in an island form wider than a gate electrode above a gate electrode using the aforementioned photosensitive resin pattern whose thickness was reduced as a mask to expose a first transparent insulating substrate as well as for removing a gate insulating layer in the aforementioned opening to expose a part of a scan line, a process for forming a photosensitive resin pattern thinner at a signal line than other regions corresponding to a source wire (signal line) and a drain wire comprising a pixel electrode both such as to partially overlap the aforementioned protective insulating layer, an electrode terminal of a scan line containing the aforementioned opening, and an electrode terminal of a signal line comprising a part of a signal line outside an image display region after depositing a transparent conductive layer and an anodizable low resistance metal layer, a process for selectively removing a low resistance metal layer, a transparent conductive layer, a heat resistant metal layer, a second amorphous silicon layer and a first amorphous silicon layer using the aforementioned photosensitive resin pattern as a mask to form source and drain wires, and electrode terminals for a scan line and a signal line, a process for decreasing a thickness of the aforementioned photosensitive resin pattern to expose a signal line, a process for forming an anodized layer on an exposed signal line using the aforementioned photosensitive resin pattern whose thickness was reduced as a mask, process for removing the aforementioned photosensitive resin pattern whose thickness was reduced, removing a low resistance metal layer using the aforementioned anodized layer as a mask, and forming a transparent conductive pixel electrode and electrode terminals of a scan line and a signal line.
  - 38. A manufacturing method of the liquid crystal display device recited in claim 25, comprising at least, a process for successively depositing at least a first metal layer of one or more layers, a gate insulating layer of one or more layers, a first amorphous silicon layer not containing impurities and a protective insulating layer on a main surface of a first transparent insulating substrate, a process for selectively forming a protective insulating layer comprising a channel protection layer for a insulating gate type transistor to expose the aforementioned first amorphous silicon layer, a process for depositing a second amorphous silicon layer containing impurities and an anodizable heat resistant metal layer, a process for forming a photosensitive resin pattern thinner at a contact formation region for a scan line than other regions corresponding to a scan line outside an image display region, a process for successively etching the aforementioned heat resistant metal layer, a second amorphous silicon layer, a first amorphous silicon layer, a gate insulating layer and a first metal layer using the aforementioned photosensitive resin pattern as a mask, a process for reducing a thickness of the aforementioned photosensitive resin pattern to expose a heat resistant metal layer in a contact formation region, a process for forming an insulating layer in a side of a scan line, a process for etching a heat resistant metal layer, a second amorphous silicon layer, a first amorphous silicon layer and a gate insulating layer in the aforementioned contact region using the aforementioned photosensitive resin pattern whose thickness was reduced as a mask to expose a part of a scan line, a process for forming a photosensitive resin pattern thinner at a signal line than other regions corresponding to a source wire (signal line) and a drain wire comprising a pixel electrode both such as to partially overlap the aforementioned protective insulating layer, an electrode terminal of a scan line containing the aforementioned part of a scan line, and an electrode terminal of a signal line comprising a part of a signal line outside an image display region after depositing a transparent conductive layer and an anodizable low resistance metal layer, a process for selectively removing a low resistance metal layer, a transparent conductive layer, a heat resistant metal layer, a second amorphous silicon layer and a first amorphous silicon layer using the aforementioned photosensitive resin pattern as a mask to form source and drain wires, and electrode terminals for a scan line and a signal line, a process for decreasing a thickness of the aforementioned photosensitive resin pattern to expose a signal line, a process for forming an anodized layer on an exposed signal line using the aforementioned photosensitive resin pattern whose thickness was reduced as a mask, and a process for removing the aforementioned photosensitive resin pattern whose thickness was reduced, removing a low resistance metal layer using the aforementioned anodized layer as a mask, and forming a transparent conductive pixel electrode and transparent conductive electrode terminals of a scan line and a signal line.
  - 40. A manufacturing method of the liquid crystal display device recited in claim 25, comprising at least, a process for forming at least a scan line comprising a first metal layer of one or more layers on a main surface of a first transparent insulating substrate, a process for successively depositing a gate insulating layer of one or more layers, a first amorphous silicon layer not containing impurities, a second amorphous silicon layer containing impurities and an anodizable heat resistant metal layer, a process for forming the aforementioned heat resistant metal layer, a second amorphous silicon layer and a first amorphous silicon layer in an island form wider than a gate electrode above a gate electrode to expose a gate insulating layer, a process to form an opening in a gate insulating layer on a scan line outside an image display region to expose a part of a scan line, a process for forming a photosensitive resin pattern thinner at a signal line than other regions corresponding to a source wire (signal line) and a drain wire comprising a pixel electrode both such as to partially overlap a gate electrode, an electrode terminal of a scan line containing the aforementioned opening, and an electrode terminal of a signal line comprising a part of a signal line outside an image display region after depositing a transparent conductive layer and an anodizable low resistance metal layer, a process for selectively removing a low resistance metal layer, a transparent conductive layer and a heat resistant metal layer using the aforementioned photosensitive resin pattern as a mask to form source and drain wires, and electrode terminals for a scan line and a signal line, a process for reducing a thickness of the aforementioned photosensitive resin pattern to expose a low resistance metal layer on a signal line, a process for anodizing an amorphous silicon layer between the aforementioned source and drain wires and an exposed signal line using the aforementioned photosensitive resin pattern whose thickness was reduced as a mask, and forming anodized layers thereof, and a process for removing the aforementioned photosensitive resin pattern whose thickness was reduced, removing a low resistance metal layer using the aforementioned anodized layer as a mask, and forming a transparent conductive pixel electrode and transparent conductive electrode terminals of a scan line and a signal line.
  - 42. A manufacturing method of the liquid crystal display device recited in claim 25, comprising at least, a process for forming at least a scan line comprising a first metal layer of one or more layers on a main surface of a first transparent insulating substrate, a process for successively depositing a gate insulating layer of one or more layers, a first amorphous silicon layer not containing impurities, a second amorphous silicon layer containing impurities and an anodizable heat resistant metal layer, a process for forming a photosensitive resin pattern thicker at semiconductor layer formation region above a gate electrode than other regions having an opening on a contact formation region of a scan line outside an image display region, a process for removing a heat resistant metal layer, a second amorphous silicon layer and a first amorphous silicon layer in the aforementioned opening using the aforementioned photosensitive resin pattern as a mask to expose a gate insulating layer, a process for reducing a thickness of the aforementioned photosensitive resin pattern to expose the aforementioned heat resistant metal layer, a process for forming a first amorphous silicon layer, a second amorphous silicon layer, and a heat resistant metal layer in an island form wider than a gate electrode above a gate electrode using the aforementioned photosensitive resin pattern whose thickness was reduced as a mask to expose a gate insulating layer as well as for removing a gate insulating layer in the aforementioned opening to expose a part of a scan line, a process for forming a photosensitive resin pattern thinner at a signal line than other regions corresponding to a source wire (signal line) and a drain wire comprising a pixel electrode both such as to partially overlap a gate electrode, an electrode terminal of a scan line containing the aforementioned opening, and an electrode terminal of a signal line comprising a part of a signal line outside an image display region after depositing a transparent conductive layer and an anodizable low resistance metal layer, a process for selectively removing a low resistance metal layer, a transparent conductive layer and a heat resistant metal layer using the aforementioned photosensitive resin pattern as a mask to form source and drain wires, and electrode terminals for a scan line and a signal line, a process for reducing a thickness of the aforementioned photosensitive resin pattern to expose a low resistance metal layer on a signal line, a process for anodizing an amorphous silicon layer between the aforementioned source and drain wires and an exposed signal line using the aforementioned photosensitive resin pattern whose thickness was reduced as a mask, and forming anodized layers thereof, and a process for removing the aforementioned photosensitive resin pattern whose thickness was reduced, removing a low resistance metal layer using the aforementioned anodized layer as a mask, and forming a transparent conductive pixel electrode and transparent conductive electrode terminals of a scan line and a signal line.
  - 44. A manufacturing method of the liquid crystal display device recited in claim 25, comprising at least, a process for successively depositing at least a first metal layer of one or more layers, a gate insulating layer of one or more layers, a first amorphous silicon layer not containing impurities, a second amorphous silicon layer containing impurities and an anodizable heat resistant metal layer on a main surface of a first transparent insulating substrate, a process for forming a photosensitive resin pattern thinner at a contact formation region for a scan line than other regions corresponding to a scan line outside an image display region, a process for successively etching the aforementioned heat resistant metal layer, a second amorphous silicon layer, a first amorphous silicon layer, a gate insulating layer and a first metal layer using the aforementioned photosensitive resin pattern as a mask, a process for reducing a thickness of the aforementioned photosensitive resin pattern to expose a heat resistant metal layer in a contact formation region, a process for forming an insulating layer in a side of a scan line, a process for etching a heat resistant metal layer, a second amorphous silicon layer, a first amorphous silicon layer and a gate insulating layer in the aforementioned contact region using the aforementioned photosensitive resin pattern whose thickness was reduced as a mask to expose a part of a scan line, a process for forming a first amorphous silicon layer, a second amorphous silicon layer, and a heat resistant metal layer in an island form above a gate electrode to expose a gate insulating layer as well as to protecting the aforementioned contact region to form a first amorphous silicon layer, a second amorphous silicon layer, and a heat resistant metal layer in a periphery of a contact, a process for forming a photosensitive resin pattern thinner at a signal line than other regions corresponding to a source wire (signal line) and a drain wire comprising a pixel electrode both such as to partially overlap a gate electrode, an electrode terminal of a scan line containing the aforementioned contact region, and an electrode terminal of a signal line comprising a part of a signal line outside an image display region after depositing a transparent conductive layer and an anodizable low resistance metal layer, a process for selectively removing a low resistance metal layer, a transparent conductive layer and a heat resistant metal layer using the aforementioned photosensitive resin pattern as a mask to form source and drain wires, and electrode terminals for a scan line and a signal line, a process for reducing a thickness of the aforementioned photosensitive resin pattern to expose a low resistance metal layer on a signal line, a process for anodizing an amorphous silicon layer between the aforementioned source and drain wires and an exposed signal line using the aforementioned photosensitive resin pattern whose thickness was reduced as a mask, and forming anodized layers thereof, and a process for removing the aforementioned photosensitive resin pattern whose thickness was reduced, removing a low resistance metal layer using the aforementioned anodized layer as a mask, and forming a transparent conductive pixel electrode and transparent conductive electrode terminals of a scan line and a signal line.
  - 46. A manufacturing method of the liquid crystal display device recited in claim 25, comprising at least, a process for successively depositing at least a first metal layer of one or more layers, a gate insulating layer of one or more layers, a first amorphous silicon layer not containing impurities, a second amorphous silicon layer containing impurities and an anodizable heat resistant metal layer on a main surface of a first transparent insulating substrate, a process for forming a photosensitive resin pattern thicker at a semiconductor layer formation region above a gate electrode than other regions corresponding to a scan line, a process for successively etching the aforementioned heat resistant metal layer, a second amorphous silicon layer, a first amorphous silicon layer, a gate insulating layer and a first metal layer using the aforementioned photosensitive resin pattern as a mask, a process for reducing a thickness of the aforementioned photosensitive resin pattern to expose the aforementioned heat resistant metal layer, a process for forming a first amorphous silicon layer, a second amorphous silicon layer, and a heat resistant metal layer in an island form above a gate electrode using the aforementioned photosensitive resin pattern whose thickness was reduced as a mask to expose a gate insulating layer, a process for forming an insulating layer in a side of a scan line, a process for forming an opening at a contact formation region of a scan line outside an image display region to expose a part of a scan line in the aforementioned opening, a process for forming a photosensitive resin pattern thinner at a signal line than other regions corresponding to a source wire (signal line) and a drain wire comprising a pixel electrode both such as to partially overlap a gate electrode, an electrode terminal of a scan line containing the aforementioned opening, and an electrode terminal of a signal line comprising a part of a signal line outside an image display region after depositing a transparent conductive layer and an anodizable low resistance metal layer, a process for selectively removing a low resistance metal, a transparent conductive layer and a heat resistant metal layer using the aforementioned photosensitive resin pattern as a mask to form source and drain wires, and electrode terminals for a scan line and a signal line, a process for reducing a thickness of the aforementioned photosensitive resin pattern to expose a low resistance metal layer on a signal line, a process for anodizing an amorphous silicon layer between the aforementioned source and drain wires and an exposed signal line using the aforementioned photosensitive resin pattern whose thickness was reduced as a mask, and forming anodized layers thereof, and a process for removing the aforementioned photosensitive resin pattern whose thickness was reduced, removing a low resistance metal layer using the aforementioned anodized layer as a mask, and forming a transparent conductive pixel electrode and transparent conductive electrode terminals of a scan line and a signal line.
  - 48. A manufacturing method of the liquid crystal display device recited in claim 25, comprising at least, a process for successively depositing at least a first metal layer of one or more layers, a gate insulating layer of one or more layers, a first amorphous silicon layer not containing impurities, a second amorphous silicon layer containing impurities and an anodizable heat resistant metal layer on a main surface of a first transparent insulating substrate, a process for forming a first amorphous silicon layer, a second amorphous silicon layer, and a heat resistant metal layer in an island form at a semiconductor layer formation region to expose a gate insulating layer, a process for forming a photosensitive resin pattern thinner at a contact formation region for a scan line than other regions outside an image display region corresponding to a scan line, a process for successively etching the aforementioned heat resistant metal layer, a second amorphous silicon layer, a first amorphous silicon layer, a gate insulating layer and a first metal layer using the aforementioned photosensitive resin pattern as a mask, a process for reducing a thickness of the aforementioned photosensitive resin pattern to expose a gate insulating layer at a contact formation region, a process for forming an insulating layer in a side of a scan line, a process for etching a gate insulating layer in the aforementioned contact region using the aforementioned photosensitive resin pattern whose thickness was reduced as a mask to expose a part of a scan line, a process for forming a photosensitive resin pattern thinner at a signal line than other regions corresponding to a source wire (signal line) and a drain wire comprising a pixel electrode both such as to partially overlap a gate electrode, an electrode terminal of a scan line containing the aforementioned contact region, and an electrode terminal of a signal line comprising a part of a signal line outside an image display region after depositing a transparent conductive layer and an anodizable low resistance metal layer, a process for selectively removing a low resistance metal, a transparent conductive layer and a heat resistant metal layer using the aforementioned photosensitive resin pattern as a mask to form source and drain wires, and electrode terminals for a scan line and a signal line, a process for reducing a thickness of the aforementioned photosensitive resin pattern to expose a low resistance metal layer on a signal line, a process for anodizing an amorphous silicon layer between the aforementioned source and drain wires and an exposed signal line using the aforementioned photosensitive resin pattern whose thickness was reduced as a mask, and forming anodized layers thereof, and a process for removing the aforementioned photosensitive resin pattern whose thickness was reduced, removing a low resistance metal layer using the aforementioned anodized layer as a mask, and forming a transparent conductive pixel electrode and transparent conductive electrode terminals of a scan line and a signal line.
  - 50. A manufacturing method of the liquid crystal display device recited in claim 25, comprising at least, a process for successively depositing at least a first metal layer of one or more layers, a gate insulating layer of one or more layers, a first amorphous silicon layer not containing impurities, a second amorphous silicon layer containing impurities and an anodizable heat resistant metal layer on a main surface of a first transparent insulating substrate, a process for forming a photosensitive resin pattern thicker both at a proximity of an intersection of a signal line and a scan line, and at a gate electrode than at other regions corresponding to a scan line, a process for successively etching the aforementioned heat resistant metal layer, a second amorphous silicon layer, a first amorphous silicon layer, a gate insulating layer and a first metal layer using the aforementioned photosensitive resin pattern as a mask, a process for reducing the aforementioned photosensitive resin pattern to selectively expose a heat resistant metal layer on a scan line, a process for successively etching a heat resistant metal layer, a second amorphous silicon layer and a first amorphous silicon layer on a scan line using the aforementioned photosensitive resin pattern whose thickness was reduced as a mask to expose a gate insulating layer, a process for forming an insulating layer in a side of a scan line, a process for etching a gate insulating layer on a scan line using the aforementioned photosensitive resin pattern whose thickness was reduced as a mask to expose a scan line, a process for forming a photosensitive resin pattern thinner at a signal line than other regions corresponding to a source wire (signal line) and a drain wire comprising a pixel electrode both such as to partially overlap a gate electrode, an electrode terminal of a scan line containing the aforementioned exposed scan line, and an electrode terminal of a signal line comprising a part of a signal line outside an image display region after depositing a transparent conductive layer and an anodizable low resistance metal layer, a process for selectively removing a low resistance metal, a transparent conductive layer and a heat resistant metal layer using the aforementioned photosensitive resin pattern as a mask to form source and drain wires, and electrode terminals for a scan line and a signal line, a process for reducing a thickness of the aforementioned photosensitive resin pattern to expose a low resistance metal layer on a signal line, a process for anodizing an amorphous silicon layer between the aforementioned source and drain wires and an exposed signal using the aforementioned photosensitive resin pattern whose thickness was reduced as a mask, and forming anodized layers thereof as well as forming an anodized layer on an exposed scan line, and a process for removing the aforementioned photosensitive resin pattern whose thickness was reduced, removing a low resistance metal layer using the aforementioned anodized layer as a mask, and forming a transparent conductive pixel electrode and transparent conductive electrode terminals of a scan line and a signal line.

26. A manufacturing method for a liquid crystal display device made by filling liquid crystal between a first transparent insulating substrate (active substrate) and a second transparent insulating substrate opposing the aforementioned first transparent insulating substrate or a color filter, wherein formation of a pixel electrode and source and drain wires comprise:
- a process for forming a photosensitive resin pattern thinner at least at a pixel electrode than at a signal line corresponding to a source wire (signal line), a drain wire comprising a pixel electrode, an electrode terminal of a scan line, and an electrode terminal of a signal line comprising a part of a signal line after depositing a transparent conductive layer and a low resistance metal layer, a process for forming electrode terminals for a scan line and a signal line, and source and drain wires using the aforementioned photosensitive resin pattern as a mask, a process for reducing a thickness of the aforementioned photosensitive resin pattern to expose a low resistance metal layer on a pixel electrode, and a process for removing an exposed low resistance metal layer using the aforementioned photosensitive resin pattern whose thickness was reduced as a mask, and forming a transparent conductive pixel electrode.
- View Dependent Claims (39, 41, 43, 45, 47, 49)
- - 39. A manufacturing method of the liquid crystal display device recited in claim 26, comprising at least, a process for forming at least a scan line comprising a first metal layer of one or more layers on a main surface of a first transparent insulating substrate, a process for successively depositing a gate insulating layer of one or more layers, a first amorphous silicon layer not containing impurities, a second amorphous silicon layer containing impurities and a heat resistant metal layer, a process for forming the aforementioned heat resistant metal layer, a second amorphous silicon layer and a first amorphous silicon layer in an island form wider than a gate electrode above a gate electrode to expose a gate insulating layer, a process to form an opening in a gate insulating layer on a scan line outside an image display region to expose a part of a scan line, a process for forming a photosensitive resin pattern thinner at least at a pixel electrode than at a signal line corresponding to a source wire (signal line) and a drain wire comprising a pixel electrode both such as to partially overlap a gate electrode, an electrode terminal of a scan line containing the aforementioned opening, and an electrode terminal of a signal line comprising a part of a signal line outside an image display region after depositing a transparent conductive layer and a low resistance metal layer, a process for selectively removing a low resistance metal layer, a transparent conductive layer, a heat resistant metal layer, a second amorphous silicon layer, and a first amorphous silicon layer using the aforementioned photosensitive resin pattern as a mask to form source and drain wires, and electrode terminals for a scan line and a signal line, a process for reducing a thickness of the aforementioned photosensitive resin pattern to expose a low resistance metal layer at least on a pixel electrode, a process for removing an exposed low resistance metal layer using the aforementioned photosensitive resin pattern whose thickness was reduced as a mask, and forming at least a transparent conductive pixel electrode, and a process for forming a passivating insulating layer on the aforementioned first transparent insulating substrate having openings on electrode terminals for a signal line and a scan line and on a pixel electrode.
  - 41. A manufacturing method of the liquid crystal display device recited in claim 26, comprising at least, a process for forming at least a scan line comprising a first metal layer of one or more layers on a main surface of a first transparent insulating substrate, a process for successively depositing a gate insulating layer of one or more layers, a first amorphous silicon layer not containing impurities, a second amorphous silicon layer containing impurities and a heat resistant metal layer, a process for forming a photosensitive resin pattern thicker at semiconductor layer formation region above a gate electrode than other regions having an opening on a contact formation region of a scan line outside an image display region, a process for removing a heat resistant metal layer, a second amorphous silicon layer and a first amorphous silicon layer in the aforementioned opening using the aforementioned photosensitive resin pattern as a mask to expose a gate insulating layer, a process for reducing a thickness of the aforementioned photosensitive resin pattern to expose the aforementioned heat resistant metal layer, a process for forming a first amorphous silicon layer, a second amorphous silicon layer, and a heat resistant metal layer in an island form wider than a gate electrode above a gate electrode using the aforementioned photosensitive resin pattern whose thickness was reduced as a mask to expose a gate insulating layer as well as for removing a gate insulating layer in the aforementioned opening to expose a part of a scan line, a process for forming a photosensitive resin pattern thinner at least at a pixel electrode than at a signal line corresponding to a source wire (signal line) and a drain wire comprising a pixel electrode both such as to partially overlap a gate electrode, an electrode terminal of a scan line containing the aforementioned opening, and an electrode terminal of a signal line comprising a part of a signal line outside an image display region after depositing a transparent conductive layer and a low resistance metal layer, a process for selectively removing a low resistance metal layer, a transparent conductive layer, a heat resistant metal layer, a second amorphous silicon layer, and a first amorphous silicon layer using the aforementioned photosensitive resin pattern as a mask to form source and drain wires, and electrode terminals for a scan line and a signal line, a process for reducing a thickness of the aforementioned photosensitive resin pattern to expose a low resistance metal layer at least on a pixel electrode, a process for removing an exposed low resistance metal layer using the aforementioned photosensitive resin pattern whose thickness was reduced as a mask, and forming at least a transparent conductive pixel electrode, and a process for forming a passivating insulating layer on the aforementioned first transparent insulating substrate having openings on electrode terminals for a signal line and a scan line and on a pixel electrode.
  - 43. A manufacturing method of the liquid crystal display device recited in claim 26, comprising at least, a process for successively depositing at least a first metal layer of one or more layers, a gate insulating layer of one or more layers, a first amorphous silicon layer not containing impurities, a second amorphous silicon layer containing impurities and a heat resistant metal layer on a main surface of a first transparent insulating substrate, a process for forming a photosensitive resin pattern thinner at a contact formation region for a scan line than other regions corresponding to a scan line outside an image display region, a process for successively etching the aforementioned heat resistant metal layer, a second amorphous silicon layer, a first amorphous silicon layer, a gate insulating layer and a first metal layer using the aforementioned photosensitive resin pattern as a mask, a process for reducing a thickness of the aforementioned photosensitive resin pattern to expose a heat resistant metal layer in a contact formation region, a process for forming an insulating layer in a side of a scan line, a process for etching a heat resistant metal layer, a second amorphous silicon layer, a first amorphous silicon layer and a gate insulating layer in the aforementioned contact region using the aforementioned photosensitive resin pattern whose thickness was reduced as a mask to expose a part of a scan line, a process for forming a first amorphous silicon layer, a second amorphous silicon layer, and a heat resistant metal layer in an island form above a gate electrode to expose a gate insulating layer as well as to protecting the aforementioned contact region to form a first amorphous silicon layer, a second amorphous silicon layer, and a heat resistant metal layer in a periphery of a contact, a process for forming a photosensitive resin pattern thinner at least at a pixel electrode than at a signal line corresponding to a source wire (signal line) and a drain wire comprising a pixel electrode both such as to partially overlap a gate electrode, an electrode terminal of a scan line containing the aforementioned contact region, and an electrode terminal of a signal line comprising a part of a signal line outside an image display region after depositing a transparent conductive layer and a low resistance metal layer, a process for selectively removing a low resistance metal layer, a transparent conductive layer, a heat resistant metal layer, a second amorphous silicon layer, and a first amorphous silicon layer using the aforementioned photosensitive resin pattern as a mask to form source and drain wires, and electrode terminals for a scan line and a signal line, a process for reducing a thickness of the aforementioned photosensitive resin pattern to expose a low resistance metal layer at least on a pixel electrode, a process for removing an exposed low resistance metal layer using the aforementioned photosensitive resin pattern whose thickness was reduced as a mask, and forming at least a transparent conductive pixel electrode, and a process for forming a passivating insulating layer on the aforementioned first transparent insulating substrate having openings on electrode terminals for a signal line and a scan line and on a pixel electrode.
  - 45. A manufacturing method of the liquid crystal display device recited in claim 26, comprising at least, a process for successively depositing at least a first metal layer of one or more layers, a gate insulating layer of one or more layers, a first amorphous silicon layer not containing impurities, a second amorphous silicon layer containing impurities and a heat resistant metal layer on a main surface of a first transparent insulating substrate, a process for forming a photosensitive resin pattern thicker at a semiconductor layer formation region above a gate electrode than other regions corresponding to a scan line, a process for successively etching the aforementioned heat resistant metal layer, a second amorphous silicon layer, a first amorphous silicon layer, a gate insulating layer and a first metal layer using the aforementioned photosensitive resin pattern as a mask, a process for reducing a thickness of the aforementioned photosensitive resin pattern to expose the aforementioned heat resistant metal layer, a process for forming a first amorphous silicon layer, a second amorphous silicon layer, and a heat resistant metal layer in an island form above a gate electrode using the aforementioned photosensitive resin pattern whose thickness was reduced as a mask to expose a gate insulating layer, a process for forming an insulating layer in a side of a scan line, a process for forming an opening at a contact formation region of a scan line outside an image display region to expose a part of a scan line in the aforementioned opening, a process for forming a photosensitive resin pattern thinner at least at a pixel electrode than at a signal line corresponding to a source wire (signal line) and a drain wire comprising a pixel electrode both such as to partially overlap a gate electrode, an electrode terminal of a scan line containing the aforementioned opening, and an electrode terminal of a signal line comprising a part of a signal line outside an image display region after depositing a transparent conductive layer and a low resistance metal layer, a process for selectively removing a low resistance metal layer, a transparent conductive layer, a heat resistant metal layer, a second amorphous silicon layer, and a first amorphous silicon layer using the aforementioned photosensitive resin pattern as a mask to form source and drain wires, and electrode terminals for a scan line and a signal line, a process for reducing a thickness of the aforementioned photosensitive resin pattern to expose a low resistance metal layer at least on a pixel electrode, a process for removing an exposed low resistance metal layer using the aforementioned photosensitive resin pattern whose thickness was reduced as a mask, and forming at least a transparent conductive pixel electrode, and a process for forming a passivating insulating layer on the aforementioned first transparent insulating substrate having openings on electrode terminals for a signal line and a scan line and on a pixel electrode.
  - 47. A manufacturing method of the liquid crystal display device recited in claim 26, comprising at least, a process for successively depositing at least a first metal layer of one or more layers, a gate insulating layer of one or more layers, a first amorphous silicon layer not containing impurities, a second amorphous silicon layer containing impurities and a heat resistant metal layer on a main surface of a first transparent insulating substrate, a process for forming a first amorphous silicon layer, a second amorphous silicon layer, and a heat resistant metal layer in an island form at a semiconductor layer formation region to expose a gate insulating layer, a process for forming a photosensitive resin pattern thinner at a contact formation region for a scan line than other regions outside an image display region corresponding to a scan line, a process for successively etching the aforementioned heat resistant metal layer, a second amorphous silicon layer, a first amorphous silicon layer, a gate insulating layer and a first metal layer using the aforementioned photosensitive resin pattern as a mask, a process for reducing a thickness of the aforementioned photosensitive resin pattern to expose a gate insulating layer at a contact formation region, a process for forming an insulating layer in a side of a scan line, a process for etching a gate insulating layer in the aforementioned contact region using the aforementioned photosensitive resin pattern whose thickness was reduced as a mask to expose a part of a scan line, a process for forming a photosensitive resin pattern thinner at least at a pixel electrode than at a signal line corresponding to a source wire (signal line) and a drain wire comprising a pixel electrode both such as to partially overlap a gate electrode, an electrode terminal of a scan line containing the aforementioned contact region, and an electrode terminal of a signal line comprising a part of a signal line outside an image display region after depositing a transparent conductive layer and a low resistance metal layer, a process for selectively removing a low resistance metal layer, a transparent conductive layer, a heat resistant metal layer, a second amorphous silicon layer, and a first amorphous silicon layer using the aforementioned photosensitive resin pattern as a mask to form source and drain wires, and electrode terminals for a scan line and a signal line, a process for reducing a thickness of the aforementioned photosensitive resin pattern to expose a low resistance metal layer at least on a pixel electrode, a process for removing an exposed low resistance metal layer using the aforementioned photosensitive resin pattern whose thickness was reduced as a mask, and forming at least a transparent conductive pixel electrode, and a process for forming a passivating insulating layer on the aforementioned first transparent insulating substrate having openings on electrode terminals for a signal line and a scan line and on a pixel electrode.
  - 49. A manufacturing method of the liquid crystal display device recited in claim 26, comprising at least, a process for successively depositing at least a first metal layer of one or more layers, a gate insulating layer of one or more layers, a first amorphous silicon layer not containing impurities, a second amorphous silicon layer containing impurities and a heat resistant metal layer on a main surface of a first transparent insulating substrate, a process for forming a photosensitive resin pattern thicker both at a proximity of an intersection of a signal line and a scan line, and at a gate electrode than other regions corresponding to a scan line, a process for successively etching the aforementioned heat resistant metal layer, a second amorphous silicon layer, a first amorphous silicon layer, a gate insulating layer and a first metal layer using the aforementioned photosensitive resin pattern as a mask, a process for reducing the aforementioned photosensitive resin pattern to selectively expose a heat resistant metal layer on a scan line, a process for successively etching a heat resistant metal layer, a second amorphous silicon layer and a first amorphous silicon layer on a scan line using the aforementioned photosensitive resin pattern whose thickness was reduced as a mask to expose a gate insulating layer, a process for forming an insulating layer in a side of a scan line, a process for etching a gate insulating layer on a scan line using the aforementioned photosensitive resin pattern whose thickness was reduced as a mask to expose a scan line, a process for forming a photosensitive resin pattern thinner at least at a pixel electrode than at a signal line corresponding to a source wire (signal line) and a drain wire comprising a pixel electrode both such as to partially overlap a gate electrode, an electrode terminal of a scan line containing the aforementioned exposed scan line, and an electrode terminal of a signal line comprising a part of a signal line outside an image display region after depositing a transparent conductive layer and a low resistance metal layer, a process for selectively removing a low resistance metal layer, a transparent conductive layer, a heat resistant metal layer, a second amorphous silicon layer, and a first amorphous silicon layer using the aforementioned photosensitive resin pattern as a mask to form source and drain wires, and electrode terminals for a scan line and a signal line, a process for reducing a thickness of the aforementioned photosensitive resin pattern to expose a low resistance metal layer at least on a pixel electrode, a process for removing an exposed low resistance metal layer using the aforementioned photosensitive resin pattern whose thickness was reduced as a mask, and forming at least a transparent conductive pixel electrode, and a process for forming a passivating insulating layer on the aforementioned first transparent insulating substrate having openings on electrode terminals for a signal line and a scan line and on a pixel electrode.

Specification

Resources

Litigation Campaign Assessment

Current Assignee
AU Optronics Corporation
Original Assignee
Quanta Display Incorporated (AUO Corp.)
Inventors
Kawasaki, Kiyohiro

Application Number

US10/950,605
Publication Number

US 20050157236A1
Time in Patent Office

Days
Field of Search
US Class Current

349/139
CPC Class Codes

G02F 1/1362   Active matrix addressed cel...

G02F 1/136231   for reducing the number of ...

G02F 1/136236   using a grey or half tone l...

Liquid crystal display device and manufacturing method therefor

First Claim

2 Assignments

0 Petitions

Accused Products

Abstract

Citations

50 Claims

Specification

Solutions

Use Cases

Quick Links

Liquid crystal display device and manufacturing method therefor

First Claim

2 Assignments

Subscription Required

Subscription Required

0 Petitions

Subscription Required

Accused Products

Subscription Required

Abstract

Citations

50 Claims

Specification

Subscription Required

Solutions

Use Cases

Quick Links