NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
First Claim
1. A nonvolatile semiconductor memory device comprising:
- a memory cell array that has a plurality of memory cells arranged in a row direction and a column direction, respectively, each memory cell having a transistor formed with a floating gate between a channel area and a control gate via an insulation film, the control gates of the memory cells in the same row being mutually connected to form common word lines, and drains of the memory cells in the same column being mutually connected to form common bit lines;
word line voltage supply means for selecting the word line connected to the memory cell which is to be programmed with data, and applying a programming gate voltage to the selected word line; and
bit line voltage supply means for selecting the bit line connected to the memory cell which is to be programmed with data, and applying a programming drain voltage to the selected bit line, wherein the word line voltage supply means is configured to be able to apply gate voltages to the same memory cell such that the gate voltage applied at and after the second time is different from the gate voltage applied at the first time, and at least one of the word line voltage supply means and the bit line voltage supply means is set to be able to apply a voltage to the same memory cell for a longer application period at the first time than at the second time.
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Accused Products
Abstract
In a nonvolatile floating-gate semiconductor memory device, a word line voltage supply circuit is configured to be able to apply gate voltages to the same memory cells such that the gate voltage applied at and after the second time is different from the gate voltage applied at the first time. At least one of the word line voltage supply circuit and the bit line voltage supply circuit is set to be able to apply a voltage to the same memory cells for a longer application period at the first time than at and after the second time. With this configuration, the threshold voltage distribution of the memory cells is controlled to be narrow.
103 Citations
30 Claims
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1. A nonvolatile semiconductor memory device comprising:
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a memory cell array that has a plurality of memory cells arranged in a row direction and a column direction, respectively, each memory cell having a transistor formed with a floating gate between a channel area and a control gate via an insulation film, the control gates of the memory cells in the same row being mutually connected to form common word lines, and drains of the memory cells in the same column being mutually connected to form common bit lines;
word line voltage supply means for selecting the word line connected to the memory cell which is to be programmed with data, and applying a programming gate voltage to the selected word line; and
bit line voltage supply means for selecting the bit line connected to the memory cell which is to be programmed with data, and applying a programming drain voltage to the selected bit line, wherein the word line voltage supply means is configured to be able to apply gate voltages to the same memory cell such that the gate voltage applied at and after the second time is different from the gate voltage applied at the first time, and at least one of the word line voltage supply means and the bit line voltage supply means is set to be able to apply a voltage to the same memory cell for a longer application period at the first time than at the second time. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A nonvolatile semiconductor memory device comprising:
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a memory cell array that has a plurality of memory cells arranged in a row direction and a column direction, respectively, each memory cell having a transistor formed with a floating gate between a channel area and a control gate via an insulation film, the control gates of the memory cells in the same row being mutually connected to form common word lines, and drains of the memory cells in the same column being mutually connected to form common bit lines;
word line voltage supply means for selecting the word line connected to the memory cell which is to be programmed with data, and applying a programming gate voltage to the selected word line; and
bit line voltage supply means for selecting the bit line connected to the memory cell which is to be programmed with data, and applying a programming drain voltage to the selected bit line, wherein the word line voltage supply means is configured to be able to apply gate voltages to the same memory cell such that the gate voltage applied at and after the second time is different from the gate voltage applied at the first time, the voltage difference between the gate voltage applied at the first time and the gate voltage applied at the second time is set to be different from the voltage difference between the gate voltage applied at the second time and the gate voltage applied at the third time, and the gate voltage applied at and after the third time gradually increases at stages according to the number of times of application. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23)
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24. A nonvolatile semiconductor memory device comprising:
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a memory cell array that has a plurality of memory cells arranged in a row direction and a column direction, respectively, each memory cell having a transistor formed with a floating gate between a channel area and a control gate via an insulation film, the control gates of the memory cells in the same row being mutually connected to form common word lines, and drains of the memory cells in the same column being mutually connected to form common bit lines;
word line voltage supply means for selecting the word line connected to the memory cell which is to be programmed with data, and applying a programming gate voltage to the selected word line;
bit line voltage supply means for selecting the bit line connected to the memory cell which is to be programmed with data, and applying a programming drain voltage to the selected bit line; and
program verification means for verifying a programming state of the memory cell to be programmed with data, wherein the word line voltage supply means is configured to be able to apply gate voltages to the same memory cell such that the gate voltage applied at and after the second time is different from the gate voltage applied at the first time, and that the gate voltage applied at and after the second time gradually increases at stages according to the number of times of application, and the program verification means is set not to verify the programming state after the application of the gate voltage at the first time or from the first time to the predetermined application time. - View Dependent Claims (25, 26, 27, 28, 29, 30)
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Specification