Low loss silicon waveguide and method of fabrication thereof

• US 20050158002A1
• Filed: 01/20/2004
• Published: 07/21/2005
• Est. Priority Date: 01/20/2004
• Status: Active Grant

• Current Assignee: Xerox Corporation (Xerox Holdings Corp.)
• Original Assignee: Xerox Corporation (Xerox Holdings Corp.)
• Inventors: Kubby, Joel A., Wang, Yao Rong
• Granted Patent: US 7,016,587 B2
• Time in Patent Office: Days
• US Class Current: 385/129
• CPC Class Codes: G02B 2006/12097 Ridge, rib or the like
• CPC Class Codes: G02B 6/136 by etching

Abstract

A silicon rib waveguide that has a silicon nitride cladding layer of predetermined thickness to reduce optical loss of light propagating therethrough. An exemplary embodiment of the waveguide is fabricated by using a silicon-on-insulator structure having a single crystal silicon layer bonded to a silicon wafer with a layer of insulative material. An etch resistant masking layer is deposited on the outer surface of the single crystal silicon layer and patterned to produce vias therein. A RIE etching process is used through the vias in the masking layer to form at least one rib bounded by a pair of parallel trenches. The masking layer is removed and a silicon nitride cladding layer is deposited on the rib side and end walls and on the trenches.

Claims

1. A method of fabricating a silicon rib waveguide for a micro-optical device, comprising the steps of:

providing a silicon-on-insulator structure having a single crystal silicon wafer surface thereof being bonded to a surface of a silicon wafer with a layer of insulative bonding material;

patterning a surface of the single crystal silicon wafer opposite said surface bonded to the surface of the silicon wafer to form at least one silicon rib waveguide, the at least one silicon rib waveguide having a top surface and opposing side walls and end walls; and

forming a silicon nitride cladding layer on said top surface and said opposing side walls and end walls of the at least one silicon rib, said silicon nitride cladding layer having a predetermined thickness.

2. The method of fabricating a silicon rib waveguide as claimed in claim 1, wherein the predetermined thickness of said silicon nitride layer is a multiple of the light wave length (λ

) divided by four times the index of refraction (n) of the silicon nitride cladding layer (λ

/4n).

3. The method of fabricating a silicon rib waveguide as claimed in claim 2, wherein the light wave length (λ

) is about 1.55 and the index of refraction (n) of the silicon nitride cladding layer is about 2, so that the thickness of the silicon nitride layer is about 0.19 μ

m or multiples thereof.

4. The method of fabricating a silicon rib waveguide as claimed in claim 2, wherein said patterning of the surface of said single crystal silicon wafer further comprises the step of:

patterning concurrently a parallel trench on each side of the opposing side walls of said silicon rib waveguide, so that each of said opposing side walls of the silicon rib waveguide is a respective wall of one of the trenches; and

wherein the step of forming a silicon nitride cladding layer further includes forming a silicon nitride cladding layer on said trenches.

5. The method of fabricating a silicon rib waveguide as claimed in claim 4, wherein the step of patterning comprises the steps of;

depositing an etch resistant material on the surface of the single crystal silicon wafer;

patterning the etch resistant material to from a mask having vias therein to expose the surface of the single crystal silicon wafer, said vias having a dimension and location for said trenches; and

etching the exposed surface of the single crystal silicon wafer through said vias in the mask using a Reactive Ion Etching (RIE) process.

6. The method of fabricating a silicon rib waveguide as claimed in claim 5, wherein the RIE etching process forms said silicon rib waveguide between said trenches;

and wherein said opposing side walls and end walls of the silicon rib waveguide produced by said RIE etching process have a roughness of 1-500 nm; and

wherein the silicon nitride cladding layer reduces the optical loss of the light propagating through said waveguide by about 0.35 dB/cm.

7. The method of fabricating a silicon rib waveguide as claimed in claim 6, wherein the trenches have a predetermined depth and the waveguide opposing side walls and end walls have a height about equal to the depth of said trenches.

8. The method of fabricating a silicon rib waveguide as claimed in claim 7, wherein the depth of the trenches and the height of the silicon rib waveguide opposing side walls and end walls is about 2 μ

m.

9. The method of fabricating a silicon rib waveguide as claimed in claim 1, wherein the silicon nitride cladding layer is the type having a low film stress to minimize strain on the waveguide, thereby preventing polarization mode dispersion of the light propagating therethrough.

10. A silicon rib waveguide for a micro-optical device, comprising:

a silicon rib waveguide as fabricated by the method of claim 1, said silicon rib waveguide having a silicon nitride cladding layer to reduce optical loss of the light propagating therethrough.

11. A silicon rib waveguide for a micro-optical device, comprising:

a silicon-on-insulator structure having a single crystal silicon substrate with opposing surfaces, one of said single silicon substrate surfaces being bonded to a silicon wafer by a layer of insulative bonding material;

a rib waveguide formed in the surface of the single crystal silicon substrate opposite the one bonded to the silicon wafer by a Reactive Ion Etching (RIE) process, said rib waveguide having opposing side walls and opposing end walls that serve as facets, said rib waveguide being bounded by a pair of parallel trenches, one trench on each side of the rib waveguide, so that one side wall of each of the trenches is also a respective one of the opposing side walls of the rib waveguide, said rib waveguide side walls and end walls formed by the RIE etching process having a surface roughness; and

a silicon nitride cladding layer deposited on the surfaces of the rib waveguide and trenches, the silicon nitride cladding layer being of the type having a low film stress to minimize strain on said rib waveguide and having a predetermined thickness to reduce the optical loss caused by the roughness of the rib waveguide rib side walls and end walls, the silicon nitride cladding on the rib waveguide end walls that serve as facets provide an anti-reflection coating at said facets.