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Radiation detector

  • US 20050158906A1
  • Filed: 03/04/2005
  • Published: 07/21/2005
  • Est. Priority Date: 04/28/2000
  • Status: Active Grant
First Claim
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1. A method of producing a radiation detector comprising:

  • forming an active matrix board including gate lines and data lines arrayed in a two-dimensional lattice shape, a plurality of high-speed switching elements provided at respective lattice points and connected to the gate lines and the data lines, each switching element being formed of polycrystalline silicon thin film transistor and having a source electrode, pixel electrodes connected to the source electrodes of the high-speed switching elements, and charge storage capacitances, each being disposed between the pixel electrode and a ground electrode, and forming a converting layer on the pixel electrodes at a temperature between 300°

    C. and 800°

    C. to generate a pair of electron-hole by absorbing light or radiation.

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