Floating gate memory cell and forming method
First Claim
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1. A method for forming a polysilicon floating gate during the manufacture of a floating gate memory cell using a deposition process, comprising:
- selecting a reaction gas and, optionally, a second gas for forming the floating gate during the deposition process consisting essentially of a reaction gas SiX or Si2Y or an appropriate combination thereof, and, optionally, a second gas Z, where at least one of X, Y and Z comprises deuterium (D); and
forming a microcrystalline polysilicon floating gate using said selected reaction gas/second gas.
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Abstract
A floating gate memory cell comprises a substrate with a drain and a source separated by a channel, a floating gate separated from the channel by a first insulation layer, and a control gate separated from the floating gate by a second insulation layer. The deposition environment is chosen so that the grain size of at least a portion of the floating gate opposite the first insulation layer is about 50-500 Å.
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Citations
31 Claims
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1. A method for forming a polysilicon floating gate during the manufacture of a floating gate memory cell using a deposition process, comprising:
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selecting a reaction gas and, optionally, a second gas for forming the floating gate during the deposition process consisting essentially of a reaction gas SiX or Si2Y or an appropriate combination thereof, and, optionally, a second gas Z, where at least one of X, Y and Z comprises deuterium (D); and
forming a microcrystalline polysilicon floating gate using said selected reaction gas/second gas. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A method for forming a polysilicon floating gate during the manufacture of a floating gate memory cell using a deposition process, comprising:
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selecting a reaction gas and, optionally, a second gas for forming the floating gate during the deposition process consisting essentially of a reaction gas SiX and, optionally, a second gas Y;
the selecting step being carried out with X comprising at least one of;
H4, H2Cl2, HCl3, D4, D2Cl2, D3Cl and Y comprising at least one of;
D2, H2, D3; and
forming a microcrystalline polysilicon floating gate using said selected reaction gas/second gas. - View Dependent Claims (20, 21, 22, 23)
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24. A method for forming a polysilicon floating gate during the manufacture of a floating gate memory cell using a deposition process, comprising:
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selecting a reaction gas and, optionally, a second gas for forming the floating gate during the deposition process consisting essentially of a reaction gas Si2X and, optionally, a second gas Y;
the selecting step being carried out with X comprising at least one of;
H6, H4Cl2, H2Cl4, D6, D4Cl2, D2Cl4 and Y comprising at least one of;
D2, H2, D3; and
forming a microcrystalline polysilicon floating gate using said selected reaction gas/second gas. - View Dependent Claims (25, 26, 27, 28)
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29. A method for forming a polysilicon floating gate during the manufacture of a floating gate memory cell using a deposition process, the floating gate memory cell of a type comprising a substrate with a drain and a source separated by a channel, a floating gate separated from the channel by a first insulation layer, and a control gate separated from the floating gate by a second insulation layer, comprising:
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choosing a deposition environment comprising;
selecting a reaction gas;
selecting a reaction gas flow rate;
selecting a deposition pressure; and
selecting a deposition time;
forming a microcrystalline polysilicon floating gate; and
said the selecting steps chosen so that the grain size of at least a portion of the floating gate opposite the first insulation layer is about 50-500 Å
. - View Dependent Claims (30, 31)
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Specification