Method for fabricating nitride-based compound semiconductor element
First Claim
1. A method for fabricating a nitride-based compound semiconductor element, comprising the steps of:
- forming a nitride-based compound semiconductor layer on a base substrate;
forming a conductive film as an etching mask on part of the surface of the nitride-based compound semiconductor layer;
performing dry etching on the nitride-based compound semiconductor layer; and
performing wet etching on the nitride-based compound semiconductor layer by emitting electrons from the nitride-based compound semiconductor layer through the conductive film to the outside.
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Abstract
A method for fabricating a nitride semiconductor element according to the present invention comprises the steps of: forming a nitride semiconductor layer 13 on a base substrate 11; forming, on part of the upper surface of the nitride semiconductor layer 13, a conductive film 14 made of an electron emitting layer 14b and a dry etching mask layer 14a from bottom to top; performing dry etching on the nitride semiconductor layer 13; and performing wet etching on the nitride semiconductor layer 13 by emitting electrons from the nitride semiconductor layer 13 through the conductive film 14 to the outside.
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Citations
14 Claims
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1. A method for fabricating a nitride-based compound semiconductor element, comprising the steps of:
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forming a nitride-based compound semiconductor layer on a base substrate;
forming a conductive film as an etching mask on part of the surface of the nitride-based compound semiconductor layer;
performing dry etching on the nitride-based compound semiconductor layer; and
performing wet etching on the nitride-based compound semiconductor layer by emitting electrons from the nitride-based compound semiconductor layer through the conductive film to the outside. - View Dependent Claims (3, 4, 5, 6, 10, 11, 12, 13, 14)
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2. A method for fabricating a nitride-based compound semiconductor element, comprising the steps of:
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forming a nitride-based compound semiconductor layer on a base substrate;
forming, on part of the surface of the nitride-based compound semiconductor layer, a multilayer conductive film whose uppermost layer is a dry etching mask layer;
performing dry etching on the nitride-based compound semiconductor layer;
removing the dry etching mask layer; and
performing wet etching on the nitride-based compound semiconductor layer by emitting electrons from the nitride-based compound semiconductor layer through the conductive film to the outside.
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7. A method for fabricating a nitride-based compound semiconductor element, comprising the steps of:
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forming a nitride-based compound semiconductor layer on a base substrate;
forming, on part of the surface of the nitride-based compound semiconductor layer, a conductive film as an electron emitting film for emitting electrons from the nitride-based compound semiconductor layer to the outside; and
performing wet etching on the nitride-based compound semiconductor layer by emitting electrons from the nitride-based compound semiconductor layer through the conductive film to the outside, the wet etching being performed without applying an external voltage to the conductive film. - View Dependent Claims (8)
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9. The method of cliam 8, wherein the n-type nitride-based compound semiconductor layer is an AlGaN layer.
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