Method for sputtering TiNi shape-memory alloys
First Claim
1. A thin film device comprising a seamless thin-film expanse (i) formed of a sputtered nitinol shape memory alloy, (ii) defining, in an austenitic state, an open, interior volume;
- (iii) having a thickness between 0.5-100 microns;
(iv) having an austentite finish temperature Af below 37°
C.; and
(v) demonstrating a stress/strain recovery greater than 3% at 37°
C.;
where the expanse can be deformed into a substantially compacted configuration in a martensitic state, and the expanse assumes, in its austenitic state, a shape defining such open, interior volume.
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Abstract
A thin film device, such as an intravascular stent, is disclosed. The device is formed of a seamless expanse of thin-film (i) formed of a sputtered nitinol shape memory alloy, defining, in an austenitic state, an open, interior volume, having a thickness between 0.5-50 microns, having an austenite finish temperature Af below 37° C.; and demonstrating a stress/strain recovery greater than 3% at 37° C. The expanse can be deformed into a substantially compacted configuration in a martensitic state, and assumes, in its austenitic state, a shape defining such open, interior volume. Also disclosed is a sputtering method for forming the device.
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Citations
18 Claims
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1. A thin film device comprising a seamless thin-film expanse
(i) formed of a sputtered nitinol shape memory alloy, (ii) defining, in an austenitic state, an open, interior volume; -
(iii) having a thickness between 0.5-100 microns;
(iv) having an austentite finish temperature Af below 37°
C.; and
(v) demonstrating a stress/strain recovery greater than 3% at 37°
C.;
where the expanse can be deformed into a substantially compacted configuration in a martensitic state, and the expanse assumes, in its austenitic state, a shape defining such open, interior volume. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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Specification