Semiconductor light emitting devices including current spreading layers
First Claim
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1. A semiconductor light emitting device comprising:
- a light emitting region disposed between a cladding region of first conductivity type and a cladding region of second conductivity type;
a contact region of first conductivity type adjacent to the cladding region of first conductivity type;
a contact region of second conductivity type adjacent to the cladding region of second conductivity type; and
at least one heavily doped layer disposed within the cladding region of first conductivity type, wherein the heavily doped layer is more heavily doped than the cladding region of first conductivity type.
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Abstract
III-nitride or III-phosphide light emitting devices include a light emitting region disposed between a p-type region and an n-type region. At least one heavily doped layer is disposed within either the n-type region or the p-type region or both, to provide current spreading.
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Citations
19 Claims
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1. A semiconductor light emitting device comprising:
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a light emitting region disposed between a cladding region of first conductivity type and a cladding region of second conductivity type;
a contact region of first conductivity type adjacent to the cladding region of first conductivity type;
a contact region of second conductivity type adjacent to the cladding region of second conductivity type; and
at least one heavily doped layer disposed within the cladding region of first conductivity type, wherein the heavily doped layer is more heavily doped than the cladding region of first conductivity type. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 19)
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- 14. (canceled)
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17. A semiconductor light emitting device comprising:
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a light emitting region disposed between a cladding region of first conductivity type and a cladding region of second conductivity type;
a contact region of first conductivity type adjacent to the cladding region of first conductivity type;
a contact region of second conductivity type adjacent to the cladding region of second conductivity type;
at least one heavily doped layer disposed within the contact region of first conductivity type, wherein the heavily doped layer is more heavily doped than the contact region of first conductivity type;
wherein;
the contact region of first conductivity type is spaced apart from the light emitting region by the cladding region of first conductivity type; and
the contact region of second conductivity type is spaced apart from the light emitting region by the cladding region of second conductivity type. - View Dependent Claims (18)
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Specification