Process for production of nitride semiconductor device and nitride semiconductor device

• US 20050161688A1
• Filed: 03/22/2005
• Published: 07/28/2005
• Est. Priority Date: 04/19/2001
• Status: Abandoned Application

• Current Assignee: Goshi Biwa, Hiroyuki Okuyama, Masato Doi, Toyoharu Oohata
• Original Assignee: Goshi Biwa, Hiroyuki Okuyama, Masato Doi, Toyoharu Oohata
• Inventors: Doi, Masato, Oohata, Toyoharu, Okuyama, Hiroyuki, Biwa, Goshi
• Application Number:
  US11/086,165
• Publication Number:
  US 20050161688A1
• Time in Patent Office: Days
• US Class Current: 257/94
• CPC Class Codes: C30B 25/02 Epitaxial-layer growth
• CPC Class Codes: C30B 29/403 AIII-nitrides
• CPC Class Codes: C30B 29/406 Gallium nitride
• CPC Class Codes: H01L 21/0242 Crystalline insulating materials
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/02505 consisting of more than two layers
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/02576 N-type
• CPC Class Codes: H01L 21/02579 P-type
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 33/007 comprising nitride compounds

Abstract

Disclosed herein is a process for production of a nitride semiconductor device having good characteristic properties (such as light-emitting performance). The process does not thermally deteriorate the active layer while nitride semiconductor layers are being grown on the active layer. The process consists of forming an active layer on a substrate by vapor phase growth at a first growth temperature, and subsequently forming thereon one or more nitride semiconductor layers at a temperature which is lower than said first growth temperature plus 250° C. The process yields a nitride semiconductor device in which the active layer retains its good crystal properties, without nitrogen voids and metallic indium occurring therein due to breakage of In—N bonds.

Claims

1. A method of producing a nitride semiconductor device, the method comprising:

forming an active layer on a substrate by vapor phase growth at a first growth temperature; and

forming at least one nitride semiconductor layer on the active layer at a second growth temperature that is greater that the first growth temperature by about 250°

C. or less, wherein the nitride semiconductor layer directly adjacent to the active layer.

2. The method of claim 1 wherein the Mg-doped p-type GaN layer has a thickness of about 200 nanometers or less

3. The method of claim 1, wherein the second growth temperature is greater than the first growth temperature by about 150°

C. or less.

4. The method of claim 1, wherein the second growth temperature is greater than the first growth temperature by about 125°

C. or less.

5. The method of claim 1, wherein the Mg-doped p-type GaN layer is formed at a second growth temperature as low as about 800°

C.

6. The method of claim 1, wherein the active layer contains indium.

7. The method of claim 1, wherein the active layer has a thickness of about 30 μ

m and wherein the active layer emits light having a wavelength ranging from about 640 nm to about 370 nm.