Semiconductor light-emitting device and method for fabricating the same
First Claim
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1. A semiconductor light-emitting device which is formed by stacking a plurality of semiconductor layers including an active layer, wherein at least a portion of a semiconductor layer of the plurality of semiconductor layers is made porous, the semiconductor layer having a surface serving as a light-extraction surface for extracting light emitted from the active layer.
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Abstract
In a semiconductor light-emitting device formed by stacking a plurality of semiconductor layers including an active layer, at least a portion of a semiconductor layer of the plurality of semiconductor layers is made porous. The semiconductor layer made porous has a surface serving as a light-extraction surface for extracting light emitted from the active layer.
37 Citations
22 Claims
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1. A semiconductor light-emitting device which is formed by stacking a plurality of semiconductor layers including an active layer,
wherein at least a portion of a semiconductor layer of the plurality of semiconductor layers is made porous, the semiconductor layer having a surface serving as a light-extraction surface for extracting light emitted from the active layer.
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22. A method for fabricating a semiconductor light-emitting device, comprising the steps of:
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sequentially forming, on a substrate, at least an n-type semiconductor layer, a semiconductor layer serving as an active layer, and a p-type semiconductor layer;
separating a multilayer structure including the semiconductor layers from the substrate; and
making at least a portion of the n-type semiconductor layer of the multilayer structure porous, the n-type semiconductor layer having a surface serving as a light-extraction surface for extracting light emitted from the active layer.
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Specification