Methods to make thick film single elements and arrays
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Abstract
A material for a thick film element is deposited onto a surface of a first substrate to form a thick film element structure having a thickness of between greater than 10 μm to 100 μm. The at least one thick film element structure is bonded to a second substrate. Thereafter, the first substrate is removed from the at least one thick film element structure using a liftoff process which includes emitting, from a radiation source (such as a laser or other appropriate device), a beam through the first substrate to an attachment interface formed between the first substrate and the at least one thick film element structure at the surface of the first substrate. The first substrate is substantially transparent at the wavelength of the beam, and the beam generates sufficient energy at the interface to break the attachment.
20 Citations
53 Claims
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34. A method of producing at least one thick-film element comprising:
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depositing a material onto a surface of at least one first substrate to form at least one thick-film element structure having a thickness of between approximately greater than 10 μ
m to 100 μ
m;
bonding the at least one thick-film element structure to a second substrate;
removing the at least one first substrate from the at least one thick-film element structure using a liftoff process using radiation energy including, emitting, from a radiation source, a radiation beam through the first substrate to an attachment interface formed between the first substrate and the at least one thick-film element structure at the surface of the first substrate, wherein the first substrate is substantially transparent at the wavelength of the radiation beam, permitting the radiation beam to generate sufficient energy at the interface to break the attachment. - View Dependent Claims (35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53)
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Specification