Electrooptical device region and manufacturing method thereof, electrooptical device and electronic equipment

• US 20050162366A1
• Filed: 01/12/2005
• Published: 07/28/2005
• Est. Priority Date: 01/16/2004
• Status: Active Grant

• Current Assignee: E Ink Holdings Incorporated
• Original Assignee: Seiko Epson Corporation (Seiko Group)
• Inventors: Kawase, Takeo, Moriya, Soichi
• Granted Patent: US 7,436,465 B2
• Time in Patent Office: Days
• US Class Current: 345/97
• CPC Class Codes: G02F 1/134336 Matrix
• CPC Class Codes: G02F 1/167 by electrophoresis
• CPC Class Codes: G02F 2201/40 Arrangements for improving the aperture ratio
• CPC Class Codes: G09G 2300/08 Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
• CPC Class Codes: G09G 3/344 based on particles moving in a fluid or in a gas, e.g. electrophoretic devices electrophoretic devices per se G02F1/167

Abstract

A region of an electrooptical device includes a substrate, an active matrix switching element formed on the substrate and a pixel electrode formed on the substrate and having a first pixel electrode coupled to the switching element AM and a second pixel electrode covering a second switching element coupled to a third electrode.

Claims

1. A device comprising:

a substrate;

a first switching element formed on the substrate;

a first pixel electrode formed on the substrate coupled to the first switching element;

a second switching element formed on the substrate;

a second pixel electrode formed over a portion of the second switching element; and

a third pixel electrode formed on the substrate and coupled to the first and second switching elements.

2. The device according to claim 1, further comprising:

a capacitor formed between the second pixel electrode and the second switching element.

3. The device according to claim 1, further comprising:

a fourth pixel electrode formed over the first switching element and coupled to the third pixel electrode.

4. The device according to claim 3, further comprising:

a first capacitor formed between the fourth pixel electrode and the first switching element.

5. The device according to claim 4, further comprising:

a second capacitor formed between the second pixel electrode and the second switching element.

6. The device according to claim 1, wherein the first and second switching elements are organic thin film transistors.

7. The device according to claim 1, further comprising:

a counter substrate opposed to the substrate; and

an electrooptical layer provided between the substrate and the counter substrate.

8. A method of manufacturing a portion of an electrooptical device on a substrate comprising the steps of:

forming a first switching element on the substrate;

forming a first pixel electrode on the substrate coupled to the first switching element;

forming a second switching element on the substrate;

forming a second pixel electrode over a portion of the second switching element; and

forming a third pixel electrode on the substrate and coupled to the first and second switching elements.

9. The method of claim 8, wherein the second pixel electrode is formed by a wet process.

10. Electronic equipment including an electrooptical device comprising:

a substrate;

a first switching element formed on the substrate;

a first pixel electrode formed on the substrate coupled to the first switching element;

a second switching element formed on the substrate;

a second pixel electrode formed over a portion of the second switching element; and

a third pixel electrode formed on the substrate and coupled to the first and second switching elements.

11. A region of an electrooptical device, comprising:

a substrate;

a first switching element formed on the substrate;

a first pixel electrode formed on the substrate coupled to the switching element;

a second switching element formed on the substrate;

a second pixel electrode covering the second switching element; and

a third pixel electrode coupled to the second switching element.

12. The region of an electrooptical device according to claim 11, further comprising:

a capacitor formed between the second pixel electrode and the second switching element.

13. The region of the electrooptical device according to claim 11, wherein the first and second switching elements are organic thin film transistor.

14. An electrooptical device including the region of the electrooptical device according to claim 11 further comprising:

a counter substrate opposed to the portion of the electrooptical device; and

an electrooptical layer provided between the portion of the electrooptical device and the counter substrate.

15. Electronic equipment comprising the device according to claim 14.

16. A method of manufacturing a portion of an electrooptical device on a substrate, comprising:

forming first and second switching elements on a substrate;

forming a first pixel electrode on the substrate coupled to the first switching element;

forming a second pixel electrode on the substrate to cover the second switching element; and

forming a third pixel electrode on the substrate and coupled to the first and second switching elements.

17. The method of claim 16, wherein the second pixel electrode is formed by a wet process.