Thin film electro-optical deflector device and a method of fabrication of such a device

• US 20050163412A1
• Filed: 03/03/2005
• Published: 07/28/2005
• Est. Priority Date: 05/03/2002
• Status: Active Grant

• Current Assignee: Alexei Glebov, Michael G. Lee
• Original Assignee: Alexei Glebov, Michael G. Lee
• Inventors: Glebov, Alexei, Lee, Michael G.
• Granted Patent: US 7,035,489 B2
• Time in Patent Office: Days
• US Class Current: 385/4
• CPC Class Codes: G02B 6/13 Integrated optical circuits characterised by the manufacturing method
• CPC Class Codes: G02F 1/0027 Ferro-electric materials
• CPC Class Codes: G02F 1/295 Analog deflection from or in an optical waveguide structure]
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors

Abstract

An electro-optical deflector device, having a thin ferroelectric oxide film and a method of fabricating the deflector device is described. One embodiment of a thin film electro-optic deflector device includes: a planar optical waveguide, having a thin ferroelectric oxide layer; a first electrode, having a conductive substrate and a conductive epoxy; a second electrode coupled to the planar optical waveguide; a supporting substrate; a cladding layer attached to the second electrode deposited on the supporting substrate; and a hole through the supporting substrate and the cladding layer for connecting the second electrode to an external voltage source.

Claims

1. A method for making a thin film electro-optical device, comprising a substrate, said method comprising:

separating a ferroelectric oxide layer from a block of ferroelectric oxide material, wherein said ferroelectric oxide layer is thin and brittle;

attaching said ferroelectric oxide layer to a rigid support structure;

coupling said ferroelectric oxide layer to said substrate; and

detaching said rigid support structure from said ferroelectric oxide layer.

2. The method of claim 1 wherein said coupling said ferroelectric oxide layer to said substrate, comprises:

depositing a cladding layer on said ferroelectric oxide layer; and

affixing said cladding layer to said substrate using a conductive epoxy.

3. The method of claim 1 wherein said substrate comprises a conductive material.

4. The method of claim 1 wherein said coupling said ferroelectric oxide layer, comprises:

depositing a cladding layer on said ferroelectric oxide layer;

depositing a metal layer on said cladding layer; and

affixing said metal layer to said substrate using an adhesive.

5. The method of claim 4 wherein said substrate is non-conductive.

6. The method of claim 4 further comprising:

creating a blind via in said substrate, said blind via attached to said metal layer.

7. The method of claim 1 wherein said coupling said ferroelectric oxide layer to said substrate, comprises:

depositing a first cladding layer on said ferroelectric oxide layer;

depositing a second cladding layer on said substrate; and

affixing said first cladding layer to said second cladding layer.

8. The method of claim 1 wherein said coupling said ferroelectric oxide layer to said substrate, comprises:

depositing a cladding layer on said substrate; and

affixing said ferroelectric oxide layer to said substrate.

9. The method of claim 1 wherein said attaching said ferroelectric oxide layer to said rigid support structure comprises, using an adhesive, and wherein said detaching said rigid support structure comprises, dissolving said adhesive.

10. The method of claim 1 wherein said ferroelectric oxide layer is less than 15 microns thick.

11. The method of claim 1 wherein said ferroelectric oxide layer is about 5 to 10 microns thick.

12. The method of claim 1 wherein said ferroelectric oxide material comprises a material selected from a group consisting of lithium niobate (LiNbO₃), lithium tantalate (LiTaO₃), barium titanate, lead zirconium titanate (PZT), and lead lanthanum zirconium titanate (PLZT).

13. The method of claim 1 wherein said separating said ferroelectric oxide layer from a block of ferroelectric oxide material, comprises slicing said ferroelectric oxide layer from said block using crystal ion slicing.

14. The method of claim 1 wherein said separating said ferroelectric oxide layer from a block of ferroelectric oxide material, comprises slicing said ferroelectric oxide layer from a ferroelectric oxide block using helium ion implantation in said block.