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Low volt/high volt transistor

  • US 20050164439A1
  • Filed: 03/04/2005
  • Published: 07/28/2005
  • Est. Priority Date: 08/08/2002
  • Status: Abandoned Application
First Claim
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1. A method of manufacturing a semiconductor device, comprising:

  • providing a substrate;

    forming a gate electrode over a substrate;

    forming at least two transistors having different operation voltages over the substrate;

    performing a LDD implantation into the transistor having a higher operation voltage;

    performing an oxidation process on the transistors; and

    performing a LDD implantation into the transistor having a lower operation voltage.

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