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Zirconium oxide and hafnium oxide etching using halogen containing chemicals

  • US 20050164479A1
  • Filed: 01/27/2004
  • Published: 07/28/2005
  • Est. Priority Date: 01/27/2004
  • Status: Active Grant
First Claim
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1. A method of removing a high k dielectric layer from a substrate comprising the steps of:

  • (a) providing a substrate with isolation regions and an active area between said isolation regions;

    (b) depositing a high k dielectric layer on said substrate;

    (c) forming a patterned gate electrode on said high k dielectric layer; and

    (d) anisotropically etching through exposed portions of said high k dielectric layer with a plasma etch comprising one or more halogen containing gases.

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