Semiconductor device and manufacturing method thereof
First Claim
1. A semiconductor device comprising a chip having a photo sensor element and an amplifier circuit, wherein the photo sensor element comprises:
- a first electrode;
a photoelectric conversion layer including a semiconductor film having an amorphous structure over the first electrode; and
a second electrode over the photoelectric conversion layer, and wherein the amplifier circuit includes a TFT with a semiconductor film having a crystal structure used as an active layer.
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Accused Products
Abstract
The object of the present invention is to miniaturize the area occupied by the element and to integrate a plenty of elements in a limited area so that the sensor element can have higher output and smaller size. In the present invention, higher output and miniaturization are achieved by uniting a sensor element using an amorphous semiconductor film (typically an amorphous silicon film) and an output amplifier circuit including a TFT with a semiconductor film having a crystal structure (typically a poly-crystalline silicon film) used as an active layer over a plastic film substrate that can resist the temperature in the process for mounting such as a solder reflow process. According to the present invention, the sensor element that can resist the bending stress can be obtained.
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Citations
33 Claims
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1. A semiconductor device comprising a chip having a photo sensor element and an amplifier circuit,
wherein the photo sensor element comprises: -
a first electrode;
a photoelectric conversion layer including a semiconductor film having an amorphous structure over the first electrode; and
a second electrode over the photoelectric conversion layer, and wherein the amplifier circuit includes a TFT with a semiconductor film having a crystal structure used as an active layer. - View Dependent Claims (2, 3, 4)
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5. A semiconductor device comprising a chip having a photo sensor element and an amplifier circuit,
wherein the photo sensor element comprises: -
a first electrode;
a photoelectric conversion layer including a crystalline semiconductor film over the first electrode; and
a second electrode over the photoelectric conversion layer, and wherein the amplifier circuit includes a TFT with a semiconductor film having a crystal structure used as an active layer. - View Dependent Claims (6, 7, 8)
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9. A semiconductor device comprising a chip having a photo sensor element and an amplifier circuit,
wherein the photo sensor element comprises: -
a first electrode;
a p-type amorphous semiconductor layer partially contacting on the first electrode;
a photoelectric conversion layer including a semiconductor film having an amorphous structure contacting on the p-type amorphous semiconductor layer;
an n-type amorphous semiconductor layer contacting on the photoelectric conversion layer including the semiconductor film having the amorphous structure; and
a second electrode contacting on the n-type amorphous semiconductor layer, and wherein the amplifier circuit includes a TFT with a semiconductor film having a crystal structure used as an active layer. - View Dependent Claims (10, 11, 12, 13, 14)
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15. A semiconductor device comprising a chip having a photo sensor element and an amplifier circuit,
wherein the photo sensor element comprises: -
a first electrode;
a p-type crystalline semiconductor layer partially contacting on the first electrode;
a photoelectric conversion layer including a semiconductor film having an amorphous structure contacting on the p-type crystalline semiconductor layer;
an n-type crystalline semiconductor layer contacting on the photoelectric conversion layer including the semiconductor film having the amorphous structure; and
a second electrode contacting on the n-type crystalline semiconductor layer, and wherein the amplifier circuit includes a TFT with a semiconductor film having a crystal structure used as an active layer. - View Dependent Claims (16, 17, 18, 19, 20)
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21. A semiconductor device comprising a chip having a photo sensor element and an amplifier circuit,
wherein the photo sensor element comprises: -
a first electrode;
a p-type amorphous semiconductor layer partially contacting on the first electrode;
a photoelectric conversion layer including a semiconductor film having an amorphous structure contacting on the p-type amorphous semiconductor layer;
an n-type crystalline semiconductor layer contacting on the photoelectric conversion layer including the semiconductor film having the amorphous structure; and
a second electrode contacting on the n-type crystalline semiconductor layer, and wherein the amplifier circuit includes a TFT with a semiconductor film having a crystal structure used as an active layer. - View Dependent Claims (22, 23, 24, 25, 26)
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27. A semiconductor device comprising a chip having a photo sensor element and an amplifier circuit,
wherein the photo sensor element comprises: -
a first electrode;
a p-type crystalline semiconductor layer partially contacting on the first electrode;
a photoelectric conversion layer including a semiconductor film having an amorphous structure contacting on the p-type crystalline semiconductor layer;
an n-type amorphous semiconductor layer contacting on the photoelectric conversion layer including the semiconductor film having the amorphous structure; and
a second electrode contacting on the n-type amorphous semiconductor layer, and wherein the amplifier circuit includes a TFT with a semiconductor film having a crystal structure used as an active layer. - View Dependent Claims (28, 29, 30, 31, 32)
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33. A method for manufacturing a semiconductor device comprising a chip having a photo sensor element and an amplifier circuit comprising the steps of:
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forming a first electrode over an interlayer insulating film over a thin film transistor at the same time as forming a source or drain electrode connected to a source or drain region of the thin film transistor in the amplifier circuit;
laminating a first conductive crystalline semiconductor film, an amorphous semiconductor film, and a second conductive crystalline semiconductor film over the first electrode and the interlayer insulating film;
forming a second electrode over the second conductive crystalline semiconductor film; and
etching the first conductive crystalline semiconductor film, the amorphous semiconductor film, and the second conductive crystalline semiconductor film in a self-aligning manner using the second electrode as a mask.
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Specification