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SEMICONDUCTOR DEVICE CONTAINING DIELECTRICALLY ISOLATED PN JUNCTION FOR ENHANCED BREAKDOWN CHARACTERISTICS

  • US 20050167695A1
  • Filed: 02/02/2004
  • Published: 08/04/2005
  • Est. Priority Date: 02/02/2004
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a semiconductor substrate comprising a region of a first conductivity type, a top electrode being in electric contact with a top surface of said substrate, a bottom electrode being in electrical contact with a bottom surface of said substrate;

    a field shield region of a second conductivity type, said field shield region being laterally bounded by dielectric sidewalls, said dielectric sidewalls separating said field shield region from said region of the first conductivity type, said field shield region being bounded from below by a PN junction with said region of the first conductivity type; and

    a shield electrode in electrical contact with the field shield region.

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