Semiconductor apparatus and manufacturing method of the same

• US 20050167767A1
• Filed: 01/28/2005
• Published: 08/04/2005
• Est. Priority Date: 01/30/2004
• Status: Abandoned Application

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Semiconductor Leading Edge Technologies, Inc.
• Inventors: Akasaka, Yasushi
• Application Number:
  US11/043,962
• Publication Number:
  US 20050167767A1
• Time in Patent Office: Days
• US Class Current: 257/410
• CPC Class Codes: H01L 21/28088 the final conductor layer next to the insulator being a composite, e.g. TiN
• CPC Class Codes: H01L 21/28202 in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
• CPC Class Codes: H01L 21/823842 gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
• CPC Class Codes: H01L 29/495 the conductor material next to the insulator being a simple metal, e.g. W, Mo H01L29/4908, H01L29/4983 take precedence
• CPC Class Codes: H01L 29/518 the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
• CPC Class Codes: H01L 29/66545 using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
• CPC Class Codes: H01L 29/7833 with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's for thin film transistors H01L29/78618

Abstract

A semiconductor apparatus comprises a first semiconductor device and a second semiconductor device. The first semiconductor device includes: a semiconductor layer having a p-type channel area; an n-type source area, and an n-type drain area; a first gate insulating film provided on the p-type channel area; and a first gate electrode provided on the first gate insulating film containing a first metallic element and nitrogen. The second semiconductor device includes: a semiconductor layer having an n-type channel area, a p-type source area, and a p-type drain area; a second gate insulating film provided on the n-type channel area; and a second gate electrode provided on the second gate insulating film containing a second metallic element and nitrogen. A nitrogen content of the second gate electrode is higher than a nitrogen content of the first gate electrode.

Claims

1. A semiconductor apparatus comprising a first semiconductor device and a second semiconductor device, the first semiconductor device including:

a semiconductor layer having a p-type channel area;

an n-type source area, and an n-type drain area;

a first gate insulating film provided on the p-type channel area; and

a first gate electrode provided on the first gate insulating film containing a first metallic element and nitrogen,

the second semiconductor device including;

a semiconductor layer having an n-type channel area, a p-type source area, and a p-type drain area;

a second gate insulating film provided on the n-type channel area; and

a second gate electrode provided on the second gate insulating film containing a second metallic element and nitrogen,

a nitrogen content of the second gate electrode being higher than a nitrogen content of the first gate electrode.

2. A semiconductor apparatus according to claim 1, wherein the first and second metallic elements are IV a group elements.

3. A semiconductor apparatus according to claim 1, wherein the first and second metallic elements are either of Ti and Zr.

4. A semiconductor apparatus according to claim 1, wherein the first metallic element is Zr and the second metallic element is Ti.

5. A semiconductor apparatus according to claim 4, wherein the first metallic element and the second metallic element are Zr, and the second gate electrode includes Zr₃N₄.

6. A semiconductor apparatus according to claim 1, wherein a work function of a material constituting the second gate electrode is higher by 0.4 eV or more than a work function of a material constituting the first gate electrode.

7. A semiconductor apparatus according claim 1, wherein a nitrogen content of the second gate electrode is 1.4 times or more of a nitrogen content of the first gate electrode.

8. A semiconductor apparatus according to claim 1, wherein the first and second gate insulating films contain Hf and O.

9. A semiconductor apparatus according to claim 1, wherein the first semiconductor device and the second semiconductor device form a CMISFET.

10. A semiconductor apparatus according to claim 1, wherein an absolute value of a threshold voltage of the first semiconductor device and an absolute value of a threshold voltage of the second semiconductor device are substantially the same.

11. A semiconductor apparatus comprising a first semiconductor device and a second semiconductor device,

the first semiconductor device including:

a semiconductor layer having a p-type channel area;

an n-type source area, and an n-type drain area;

a first gate insulating film provided on the p-type channel area; and

a first gate electrode provided on the first gate insulating film containing a first metallic element and nitrogen,

the second semiconductor device including;

a semiconductor layer having an n-type channel area, a p-type source area, and a p-type drain area;

a second gate insulating film provided on the n-type channel area; and

a second gate electrode provided on the second gate insulating film containing a second metallic element and nitrogen,

the first metallic element and the second metallic element being different.

12. A semiconductor apparatus according to claim 11, wherein the first metallic element is Zr and the second metallic element is Ti.

13. A semiconductor apparatus according to claim 11, wherein a nitrogen content of the first gate electrode and a nitrogen content of the second gate electrode are substantially the same.

14. A semiconductor apparatus according to claim 11, wherein a work function of a material constituting the second gate electrode is higher by 0.4 eV or more than a work function of a material constituting the first gate electrode.

15. A semiconductor apparatus according to claim 11, wherein the first semiconductor device and the second semiconductor device form a CMISFET.

16. A semiconductor apparatus according to claim 11, wherein an absolute value of a threshold voltage of the first semiconductor device and an absolute value of a threshold voltage of the second semiconductor device are substantially the same.

17. A manufacturing method of a semiconductor apparatus having a first semiconductor device in which a first gate electrode is provided on a p-type channel area via a first gate insulating film and a second semiconductor device in which a second gate electrode is provided on an n-type channel area via a second gate insulating film, comprising:

forming the first gate electrode on the first gate insulating film by feeding a first metallic element and nitrogen; and

forming the second gate electrode on the second gate insulating film by feeding a second metallic element and nitrogen,

the step of forming the first gate electrode and the step of forming the second gate electrode being performed so that a nitrogen content of the second gate electrode becomes higher than a nitrogen content of the first gate electrode.

18. A manufacturing method of a semiconductor apparatus according to claim 17, wherein the first and second metallic elements are IV a group elements.

19. A manufacturing method of a semiconductor apparatus according to claim 17, wherein a work function of a material constituting the second gate electrode is higher by 0.4 eV or more than a work function of a material constituting the first gate electrode.

20. A manufacturing method of a semiconductor apparatus according claim 17, wherein a nitrogen content of the second gate electrode is 1.4 times or more of a nitrogen content of the first gate electrode.