Semiconductor apparatus and manufacturing method of the same
First Claim
1. A semiconductor apparatus comprising a first semiconductor device and a second semiconductor device, the first semiconductor device including:
- a semiconductor layer having a p-type channel area;
an n-type source area, and an n-type drain area;
a first gate insulating film provided on the p-type channel area; and
a first gate electrode provided on the first gate insulating film containing a first metallic element and nitrogen, the second semiconductor device including;
a semiconductor layer having an n-type channel area, a p-type source area, and a p-type drain area;
a second gate insulating film provided on the n-type channel area; and
a second gate electrode provided on the second gate insulating film containing a second metallic element and nitrogen, a nitrogen content of the second gate electrode being higher than a nitrogen content of the first gate electrode.
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Abstract
A semiconductor apparatus comprises a first semiconductor device and a second semiconductor device. The first semiconductor device includes: a semiconductor layer having a p-type channel area; an n-type source area, and an n-type drain area; a first gate insulating film provided on the p-type channel area; and a first gate electrode provided on the first gate insulating film containing a first metallic element and nitrogen. The second semiconductor device includes: a semiconductor layer having an n-type channel area, a p-type source area, and a p-type drain area; a second gate insulating film provided on the n-type channel area; and a second gate electrode provided on the second gate insulating film containing a second metallic element and nitrogen. A nitrogen content of the second gate electrode is higher than a nitrogen content of the first gate electrode.
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Citations
20 Claims
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1. A semiconductor apparatus comprising a first semiconductor device and a second semiconductor device, the first semiconductor device including:
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a semiconductor layer having a p-type channel area;
an n-type source area, and an n-type drain area;
a first gate insulating film provided on the p-type channel area; and
a first gate electrode provided on the first gate insulating film containing a first metallic element and nitrogen, the second semiconductor device including;
a semiconductor layer having an n-type channel area, a p-type source area, and a p-type drain area;
a second gate insulating film provided on the n-type channel area; and
a second gate electrode provided on the second gate insulating film containing a second metallic element and nitrogen, a nitrogen content of the second gate electrode being higher than a nitrogen content of the first gate electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor apparatus comprising a first semiconductor device and a second semiconductor device,
the first semiconductor device including: -
a semiconductor layer having a p-type channel area;
an n-type source area, and an n-type drain area;
a first gate insulating film provided on the p-type channel area; and
a first gate electrode provided on the first gate insulating film containing a first metallic element and nitrogen, the second semiconductor device including;
a semiconductor layer having an n-type channel area, a p-type source area, and a p-type drain area;
a second gate insulating film provided on the n-type channel area; and
a second gate electrode provided on the second gate insulating film containing a second metallic element and nitrogen, the first metallic element and the second metallic element being different. - View Dependent Claims (12, 13, 14, 15, 16)
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17. A manufacturing method of a semiconductor apparatus having a first semiconductor device in which a first gate electrode is provided on a p-type channel area via a first gate insulating film and a second semiconductor device in which a second gate electrode is provided on an n-type channel area via a second gate insulating film, comprising:
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forming the first gate electrode on the first gate insulating film by feeding a first metallic element and nitrogen; and
forming the second gate electrode on the second gate insulating film by feeding a second metallic element and nitrogen, the step of forming the first gate electrode and the step of forming the second gate electrode being performed so that a nitrogen content of the second gate electrode becomes higher than a nitrogen content of the first gate electrode. - View Dependent Claims (18, 19, 20)
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Specification