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Semiconductor apparatus and manufacturing method of the same

  • US 20050167767A1
  • Filed: 01/28/2005
  • Published: 08/04/2005
  • Est. Priority Date: 01/30/2004
  • Status: Abandoned Application
First Claim
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1. A semiconductor apparatus comprising a first semiconductor device and a second semiconductor device, the first semiconductor device including:

  • a semiconductor layer having a p-type channel area;

    an n-type source area, and an n-type drain area;

    a first gate insulating film provided on the p-type channel area; and

    a first gate electrode provided on the first gate insulating film containing a first metallic element and nitrogen, the second semiconductor device including;

    a semiconductor layer having an n-type channel area, a p-type source area, and a p-type drain area;

    a second gate insulating film provided on the n-type channel area; and

    a second gate electrode provided on the second gate insulating film containing a second metallic element and nitrogen, a nitrogen content of the second gate electrode being higher than a nitrogen content of the first gate electrode.

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