High Q factor integrated circuit inductor
First Claim
1. A method of forming an inductor, comprising in the order recited:
- (a) providing a semiconductor substrate;
(b) forming a dielectric layer on a top surface of said substrate;
(c) forming a lower trench in said dielectric layer;
(d) forming a resist layer on a top surface of said dielectric layer;
(e) forming an upper trench in said resist layer, said upper trench aligned to said lower trench, a bottom of said upper trench open to said lower trench; and
(f) completely filling said lower trench and at least partially filling said upper trench with a conductor in order to form said inductor.
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Accused Products
Abstract
An inductor and a method of forming and the inductor, the method including: (a) providing a semiconductor substrate; (b) forming a dielectric layer on a top surface of the substrate; (c) forming a lower trench in the dielectric layer; (d) forming a resist layer on a top surface of the dielectric layer; (e) forming an upper trench in the resist layer, the upper trench aligned to the lower trench, a bottom of the upper trench open to the lower trench; and (f) completely filling the lower trench at least partially filling the upper trench with a conductor in order to form the inductor. The inductor including a top surface, a bottom surface and sidewalls, a lower portion of said inductor extending a fixed distance into a dielectric layer formed on a semiconductor substrate and an upper portion extending above said dielectric layer; and means to electrically contact said inductor.
56 Citations
61 Claims
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1. A method of forming an inductor, comprising in the order recited:
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(a) providing a semiconductor substrate;
(b) forming a dielectric layer on a top surface of said substrate;
(c) forming a lower trench in said dielectric layer;
(d) forming a resist layer on a top surface of said dielectric layer;
(e) forming an upper trench in said resist layer, said upper trench aligned to said lower trench, a bottom of said upper trench open to said lower trench; and
(f) completely filling said lower trench and at least partially filling said upper trench with a conductor in order to form said inductor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method of forming an inductor, comprising in the order recited:
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(a) providing a semiconductor substrate;
(b) forming a dielectric layer on a top surface of said substrate;
(c) forming a lower trench in said dielectric layer;
(d) forming a conformal conductive liner in said lower trench and over a top surface of said dielectric layer;
(e) forming a conformal Cu seed layer over said conductive liner;
(f) forming a resist layer on said substrate;
(g) forming an upper trench in said resist layer, said upper trench aligned to said lower trench, a bottom of said upper trench open to said lower trench;
(h) electroplating Cu to completely fill said lower trench and at least partially fill said upper trench in order to form said inductor;
(i) removing said resist layer;
(j) selectively forming a conductive passivation layer over all exposed Cu surfaces; and
(k) selectively removing said Cu seed layer from regions of said conductive liner overlying said surface of said dielectric layer and removing said conductive liner from said surface of said dielectric layer. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30)
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31. A semiconductor structure, comprising:
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an inductor having a top surface, a bottom surface and sidewalls, a lower portion of said inductor extending a fixed distance into a dielectric layer formed on a semiconductor substrate and an upper portion extending above said dielectric layer; and
means to electrically contact said inductor. - View Dependent Claims (32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61)
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Specification