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High Q factor integrated circuit inductor

  • US 20050167780A1
  • Filed: 01/29/2004
  • Published: 08/04/2005
  • Est. Priority Date: 01/29/2004
  • Status: Active Grant
First Claim
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1. A method of forming an inductor, comprising in the order recited:

  • (a) providing a semiconductor substrate;

    (b) forming a dielectric layer on a top surface of said substrate;

    (c) forming a lower trench in said dielectric layer;

    (d) forming a resist layer on a top surface of said dielectric layer;

    (e) forming an upper trench in said resist layer, said upper trench aligned to said lower trench, a bottom of said upper trench open to said lower trench; and

    (f) completely filling said lower trench and at least partially filling said upper trench with a conductor in order to form said inductor.

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