HIGH-FREQUENCY POWER AMPLIFICATION ELECTRONIC PART AND WIRELESS COMMUNICATION SYSTEM

• US 20050168281A1
• Filed: 04/04/2005
• Published: 08/04/2005
• Est. Priority Date: 11/07/2002
• Status: Active Grant

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: Hitachi Hybrid Network Network Company Limited, Renesas Technology Corporation (Renesas Electronics Corporation)
• Inventors: Tsutsui, Takayuki, Matsushita, Kouichi, Nagamori, Hiroyuki
• Granted Patent: US 6,958,649 B2
• Time in Patent Office: Days
• US Class Current: 330/133
• CPC Class Codes: H03F 1/301 in MOSFET amplifiers H03F1/303, H03F1/305, H03F1/308 take precedence
• CPC Class Codes: H03F 2200/372 Noise reduction and elimination in amplifier
• CPC Class Codes: H03G 3/3042 in modulators, frequency-changers, transmitters or power amplifiers transmission power control in bidirectional transmission systems H04W52/04

Abstract

A high-frequency power amplification electronic part is disclosed which comprises a power amplifier circuit and a bias control circuit, the power amplifier circuit having a plurality of amplifier stages for amplifying an input high-frequency signal, the bias control circuit acting to bias the power amplifier circuit. The power amplifier circuit controls output power in accordance with input power that is varied while a gain of the power amplifier circuit is being fixed by either a bias current or a bias voltage supplied from the bias control circuit. The bias control circuit supplies at least two diode characteristic elements with a predetermined current each in order to generate at least two voltages demonstrating different temperature characteristics, the bias control circuit further using the generated voltages as a basis for generating either a plurality of bias currents or a plurality of bias voltages having a desired temperature-dependent rate of change each, the generated bias currents or bias voltages being fed to each of the plural amplifier stages constituting the power amplifier circuit.

Claims

1-13. -13. (canceled)

14. A high-frequency power amplification electronic component comprising:

a power amplifier circuit which has a plurality of amplifier stages for amplifying an input signal; and

a bias control circuit which generates bias voltages or bias current to the power amplifier circuit;

wherein the bias control circuit includes two or more diode characteristic elements which supply predetermined currents and generate two or more voltages having different temperature characteristics from each other, and which generate the bias voltages or the bias currents having different temperature characteristics from each other.

15. A high-frequency power amplification electronic component according to claim 14, wherein the bias control circuit generates the bias currents or the bias voltages having different temperature characteristics based on a reference current.

16. A high-frequency power amplification electronic component according to claim 14, wherein the two or more diode characteristic elements are arranged in parallel, and receive the predetermined currents different from each other.

17. A high-frequency power amplification electronic component according to claim 14, wherein the predetermined currents are generated by current mirror circuits according to the reference current.

18. A high-frequency power amplification electronic component according to claim 16, wherein the bias control circuit comprises:

an error amplifier circuit coupled with the diode characteristic elements and which amplifies a first signal and a second signal according to an output of the diode characteristic elements;

a first amplifier circuit which converts output voltage of the error amplifier circuit into current;

a first transistor group which includes a plurality of transistors coupled to an output transistor of the first amplifier circuit or a transistor receiving an output of the first amplifier circuit for forming current mirroring purposes;

a second amplifier circuit which receives a reference voltage and converts the reference into current; and

a second transistor group which includes a plurality of transistors coupled with an output transistor of the second amplifier circuit or a transistor receiving an output of the second amplifier circuit for forming current mirroring purpose,

wherein the bias currents or the bias voltages generated by subtracting from the currents of the transistors constituting the first transistor group, the currents of the corresponding transistors constituting the second transistor group, or the bias voltages converted from the currents.

19. A high-frequency power amplification electronic component according to claim 17, further comprising:

first switching means arranged between the output transistor of the first amplifier circuit or the transistor receiving the output of the first amplifier circuit, and the first transistor group, the first switching means enabling or disabling the input either to the output transistor of the first amplifier circuit or to the transistor receiving the output of the first amplifier circuit; and

second switching means arranged between the output transistor of the second amplifier circuit or the transistor receiving the output of the second amplifier circuit, and the second transistor group, the second switching means enabling or disabling the input either to the output transistor of the second amplifier circuit or to the transistor receiving the output of the second amplifier circuit.

20. A high-frequency power amplification electronic component according to claim 19, which further includes buffer circuits arranged between the error amplifier circuit and the diode characteristic elements, and the buffer circuit converts output of the diode characteristic elements to the first signal and the second signal.

21. A high-frequency power amplification electronic component according to claim 14, further comprising:

a first high-frequency power amplifier circuit for amplifying an outgoing signal on a first frequency band and outputting the amplified signal; and

a second high-frequency power amplifier circuit for amplifying an outgoing signal on a second frequency band and outputting the amplified signal,

wherein the bias control circuit generates the bias currents or the bias voltages for both of the first high-frequency power amplifier circuit and the second high-frequency power amplifier circuit.

22. A wireless communication system comprising:

a high-frequency power amplification electronic component according to claim 14;

a second electronic component which has a variable gain amplifier circuit for amplifying an outgoing signal and which inputs the signal modulated by the variable gain amplifier circuit to the high-frequency power amplification electronic component; and

a third electronic component which includes;

level detecting means for detecting an output level of the outgoing signal output by the high-frequency power amplification electronic part; and

a control circuit which, based on a detection signal coming from the level detecting means and a signal designating the output level, generates an output control signal for controlling the gain of the variable gain amplifier circuit, the control circuit further supplying the generated output control signal to the second electronic component.