Active matrix display device

• US 20050170096A1
• Filed: 03/04/2005
• Published: 08/04/2005
• Est. Priority Date: 08/21/1997
• Status: Active Grant

• Current Assignee: Intellectual Keystone Technology LLC
• Original Assignee: Seiko Epson Corporation (Seiko Group)
• Inventors: Yudasaka, Ichio
• Granted Patent: US 7,364,939 B2
• Time in Patent Office: Days
• US Class Current: 427/258
• CPC Class Codes: H10K 50/805 Electrodes
• CPC Class Codes: H10K 50/865 comprising light absorbing layers, e.g. light-blocking layers
• CPC Class Codes: H10K 59/122 Pixel-defining structures or layers, e.g. banks
• CPC Class Codes: H10K 59/131 Interconnections, e.g. wiring lines or terminals
• CPC Class Codes: H10K 59/35 comprising red-green-blue [RGB] subpixels
• CPC Class Codes: H10K 59/805 Electrodes
• CPC Class Codes: H10K 59/8792 comprising light absorbing layers, e.g. black layers
• CPC Class Codes: H10K 71/135 using ink-jet printing

Abstract

In order to provide an active matrix display device in which a thick insulating film is preferably formed around an organic semiconductive film of a thin film luminescent device without damaging the thin film luminescent device, the active matrix display device is provided with a bank layer (bank) along a data line (sig) and a scanning line (gate) to suppress formation of parasitic capacitance in the data line (sig), in which the bank layer (bank) surrounds a region that forms the organic semiconductive film of the thin film luminescent device by an ink-jet process. The bank layer (bank) includes a lower insulating layer formed of a thick organic material and an upper insulating layer of an organic material which is deposited on the lower insulating layer and has a smaller thickness so as to avoid contact of the organic semiconductive film with the upper insulating layer.

Claims

1. A method of manufacturing an organic semiconductive film, the method comprising the steps of:

forming an insulating film that includes a plurality of insulating layers;

applying a liquid solution, comprising a precursor of an organic semiconductive film and solvent, in a region bounded by the insulating film;

forming an organic semiconductive film by removing the solvent so as to be in contact with the insulating film.

2. The method of manufacturing an organic semiconductive film according to claim 1, the semiconductive film being formed by ink-jet process.

3. The method of manufacturing an organic semiconductive film according to claim 1, the plurality of insulating layers comprising a first insulating layer formed of an organic material and a second insulating layer formed of an organic material.

4. The method of manufacturing an organic semiconductive film according to claim 3, the second insulating layer being deposited on the first insulating layer.

5. The method of manufacturing an organic semiconductive film according to claim 1, wherein the plurality of insulating layers comprising a first insulating layer and a second insulating layer, and the second insulating layer has a width narrower than a width of the first insulating layer.

6. The method of manufacturing an organic semiconductive film according to claim 1, the region bounded by the insulating film having a rounded shape.

7. The method of manufacturing an organic semiconductive film according to claim 1, wherein the liquid solution being a hydrophilic;

and

the plurality of insulating layers comprising a first insulating layer and a second insulating layer, and the second insulating layer has water-repellent properties.