Mask blank manufacturing method and sputtering target for manufacturing the same

• US 20050170263A1
• Filed: 01/06/2005
• Published: 08/04/2005
• Est. Priority Date: 01/07/2004
• Status: Active Grant

• Current Assignee: Hoya Corporation
• Original Assignee: Hoya Corporation
• Inventors: Suzuki, Toshiyuki, Mitsui, Masaru
• Granted Patent: US 7,833,387 B2
• Time in Patent Office: Days
• US Class Current: 430/5
• CPC Class Codes: C23C 14/0641 Nitrides C23C14/0617 takes precedence
• CPC Class Codes: C23C 14/225 Oblique incidence of vaporised material on substrate
• CPC Class Codes: C23C 14/3407 Cathode assembly for sputtering apparatus, e.g. Target
• CPC Class Codes: G03F 1/32 Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion,; Preparation thereof
• CPC Class Codes: G03F 1/68 Preparation processes not covered by groups G03F1/20 - G03F1/50

Abstract

A sputtering target for manufacturing a mask blank having a backing plate 5 where a portion for bonding a target member 4 is protruded like the convex with respect to a base portion 5′, and the target member 4 being formed to have a larger surface area than the area of the bonding portion of the backing plate 5 with extending from the bonding portion over a whole periphery with a bonding agent 30 interposed in-between, and further a metal 40 is deposited to a concave portion formed by a combination of the two structures in such a manner that the elution of the bonding agent 30 can be sealed.

Claims

1. A method of manufacturing a mask blank having a thin film for forming a mask pattern on a substrate,

wherein said thin film is formed by a sputtering method using a sputtering target of which target member and backing plate are bonded to each other with a bonding agent, and

further wherein a metal film is formed on a side wall of the sputtering target so as to prevent the bonding agent from being exposed.

2. The method of manufacturing a mask blank according to claim 1, wherein said thin film is formed while a surface of the substrate to be provided upward and a target surface of the sputtering target is provided at an angle of 0 to 90 degrees to a direction of a gravity.

3. The method of manufacturing a mask blank according to claim 2, wherein the target surface of the sputtering target is faced diagonally downward.

4. The method of manufacturing a mask blank according to claim 1, wherein the backing plate has a base portion and a bonding portion, said bonding portion being protruded convexly from the base portion in order to bond the target member on a top surface thereof, and a bonding-side area of said target member is larger than an area of the bonding portion of the backing plate so that the target member has a flange portion extending from a whole periphery of the bonding portion of the backing plate.

5. The method of manufacturing a mask blank according to claim 4, wherein said thin film is formed by a sputtering method using an whole-area erosion contain magnetron cathode.

6. The method of manufacturing a mask blank having a thin film for forming a mask pattern on a substrate, wherein said thin film is formed by a sputtering method using a sputtering target which is wholly formed by a target member which is formed by a material to be sputtered.

7. The method of manufacturing a mask blank according to claim 6, wherein the target surface of the sputtering target being faced diagonally downward.

8. The method of manufacturing a mask blank according to claim 6, wherein said thin film is formed by a sputtering method using an whole area erosion type magnetron cathode.

9. The method of manufacturing a mask blank having a thin film for forming a mask pattern on a substrate, wherein said thin film is formed by a sputtering method using a sputtering target of which a target member and a backing plate are bonded to each other with a bonding agent, and further wherein the target member has such a thickness that the bonding agent is not eluted by influence of a heat applied to the bonding agent during the sputtering target being used for forming the thin film.

10. The method of manufacturing a mask blank according to claim 9, wherein the target surface of the sputtering target being faced diagonally downward.

11. The method of manufacturing a mask blank according to claim 9, wherein said thin film is formed by a sputtering method using a whole area erosion type magnetron cathode.

12. A sputtering apparatus for manufacturing a mask blank having a thin film to be formed by sputtering deposition for forming a pattern on a substrate, comprising;

a sputtering chamber,

a substrate holding table for holding a substrate which surface to face upward,

a sputtering target being opposed to said substrate and having a target member and a backing plate, where said target member and said backing plate bonded to each other with a bonding agent,

wherein a metal film is formed on a side wall of the sputtering target so as to prevent the bonding agent from being exposed.

13. The sputtering apparatus according to claim 12, wherein said backing plate has a base portion and a bonding portion, where said bonding portion is a portion which is convexity protruded from the base portion in order to bond the target member on a top surface thereof, and a bonding side area of said target member is larger than an area of the bonding portion of the backing plate so that the target member has a flange portion extending from a whole periphery of the bonding portion of the backing plate.

14. The sputtering apparatus according to claim 12, wherein the target surface of the sputtering target being faced diagonally downward.

15. The sputtering apparatus according to claim 12, wherein the whole area erosion magnetron cathodes is provided to the backside of the sputtering target.

16. A sputtering apparatus for manufacturing a mask blank having a thin film to be formed by sputtering deposition for forming a pattern on a substrate, comprising;

a sputtering chamber,

a substrate holding table for holding a substrate which surface to be formed face upward,

a sputtering target being opposed to said substrate and is wholly formed by a target member which is formed by a material to be sputtered.

17. The sputtering apparatus according to claim 16, wherein the front surface of the sputtering target being faced diagonally downward.

18. The sputtering apparatus according to claim 16, wherein the whole area erosion magnetron cathodes is provided to the backside of the sputtering target.

19. A sputtering apparatus for manufacturing a mask blank having a thin film to be formed by sputtering deposition for forming a pattern on a substrate, comprising;

a sputtering chamber,

a substrate holding table for holding a substrate which surface to be formed face upward,

a sputtering target being opposed to said substrate and having a target member formed by a material to be sputtered and a backing plate, where said target member and said backing plate bonded to each other with a bonding agent,

wherein a metal film is formed on a side wall of the sputtering target so as to prevent the bonding agent from being exposed.

20. The sputtering apparatus according to claim 19, wherein the front surface of the sputtering target being faced diagonally downward.

21. The sputtering apparatus according to claim 19, wherein the whole area erosion magnetron cathodes is provided to the backside of the sputtering target.

22. A sputtering target for manufacturing a mask blank which is used for manufacturing a mask blank having a thin film to form a pattern on a substrate, comprising:

the backing plate which has a base portion and a bonding portion, said bonding portion being convexly protruded from the base portion in order to bond the target member on a top surface thereof,

the target member which has surface area being larger than an area of the bonding portion of the backing plate, and said target member is bonded to said bonding portion so that the target member has a flange portion extending from a whole periphery of the bonding portion of the backing plate, and

the metal film which is formed on a side wall of the sputtering target so as to prevent the bonding agent from being exposed.

23. The sputtering target for manufacturing a mask blank according to claim 22, wherein the target member is positioned on a gravity direction side from the bonding agent when the thin film is to be formed.

24. A sputtering target for manufacturing a mask blank which is used for manufacturing a mask blank having a thin film to form a pattern on a substrate,

wherein said sputtering target for forming the thin film is wholly formed by a target member which is formed by a material to be sputtered.

25. The sputtering target for manufacturing a mask blank which is used for manufacturing a mask blank according to claim 24, wherein the target member is positioned on a gravity direction side from the bonding agent when the film is formed.

26. A sputtering target for manufacturing a mask blank which is used for manufacturing a mask blank having a thin film to form a pattern on a substrate, comprising a target member for forming the thin film, a backing plate, and a bonding agent by which the target member and backing plate are bonded to each other, wherein

the target member has such a thickness that the bonding agent is not eluted by an influence of a heat applied to the bonding agent during the sputtering target being used for forming the thin film.

27. The sputtering target for manufacturing a mask blank according to claim 26, wherein the sputtering target is provided in such a manner that the target member is positioned on a gravity direction side from the bonding agent when the thin film is to be formed.