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Method of manufacturing non-volatile DRAM

  • US 20050170586A1
  • Filed: 04/06/2004
  • Published: 08/04/2005
  • Est. Priority Date: 01/29/2004
  • Status: Abandoned Application
First Claim
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1. A method of making an integrated circuit in a semiconductor substrate, the method comprising:

  • forming at least two isolation regions in the semiconductor substrate;

    forming a well between the two isolation regions, the well defining a body region;

    forming a first oxide layer above a first portion of the body region;

    forming a first dielectric layer above the first oxide layer;

    forming a first polysilicon layer above said first dielectric layer, said first polysilicon layer forming a control gate of a non-volatile device;

    forming a second dielectric layer above the first polysilicon layer;

    forming a first spacer above the body region and adjacent said first polysilicon layer;

    forming a second oxide layer above a second portion of the body region not covered by said first spacer;

    forming a second polysilicon layer over the second oxide layer, the first spacer and a portion of the second dielectric layer;

    said second polysilicon layer forming a guiding gate of the non-volatile device and a gate of an MOS transistor;

    delivering first implants to the body region to form lightly doped areas in the body region;

    delivering second implants to the defined source and drain regions;

    forming a second spacer above the body region to define regions receiving lightly dopes implants and to define a conducting region of a capacitor of the non-volatile cell.

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