Method for making a semiconductor device including a superlattice and adjacent semiconductor layer with doped regions defining a semiconductor junction
First Claim
1. A method for making a semiconductor device comprising:
- forming a superlattice comprising a plurality of stacked groups of layers;
each group of layers of the superlattice comprising a plurality of stacked base silicon monolayers defining a base silicon portion and an energy band-modifying layer thereon;
the energy band-modifying layer comprising at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base silicon portions;
forming a semiconductor layer adjacent the superlattice and comprising at least one first region therein including a first conductivity type dopant; and
forming at least one second region in the superlattice including a second conductivity type dopant to define, with the at least one first region, at least one semiconductor junction.
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Abstract
A method for making a semiconductor device may include forming a superlattice comprising a plurality of stacked groups of layers. Each group of layers of the superlattice may include a plurality of stacked base silicon monolayers defining a base silicon portion and an energy band-modifying layer thereon. The energy band-modifying layer may include at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base silicon portions. The method may further include forming a semiconductor layer adjacent the superlattice and comprising at least one first region therein including a first conductivity type dopant. At least one second region may be formed in the superlattice including a second conductivity type dopant to define, with the at least one first region, at least one semiconductor junction.
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Citations
20 Claims
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1. A method for making a semiconductor device comprising:
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forming a superlattice comprising a plurality of stacked groups of layers;
each group of layers of the superlattice comprising a plurality of stacked base silicon monolayers defining a base silicon portion and an energy band-modifying layer thereon;
the energy band-modifying layer comprising at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base silicon portions;
forming a semiconductor layer adjacent the superlattice and comprising at least one first region therein including a first conductivity type dopant; and
forming at least one second region in the superlattice including a second conductivity type dopant to define, with the at least one first region, at least one semiconductor junction. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method for making a semiconductor device comprising:
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forming a superlattice comprising a plurality of stacked groups of layers;
each group of layers of the superlattice comprising a plurality of stacked base silicon monolayers defining a base silicon portion and an energy band-modifying layer thereon;
the energy band-modifying layer comprising at least one oxygen monolayer constrained within a crystal lattice of adjacent base silicon portions;
forming a semiconductor layer adjacent the superlattice and comprising at least one first region therein including a first conductivity type dopant; and
forming at least one second region in the superlattice including a second conductivity type dopant to define, with the at least one first region, at least one semiconductor junction, the at least one first region and the at least one second region being in direct contact with one another. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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Specification