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MOCVD apparatus and MOCVD method

  • US 20050172895A1
  • Filed: 03/03/2003
  • Published: 08/11/2005
  • Est. Priority Date: 03/03/2003
  • Status: Active Grant
First Claim
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1. An MOCVD apparatus to supply a source gas, as a mixture of an MO source gas, with an oxidizing gas to a substrate to thereby form a film, the apparatus comprising:

  • a substrate holder to hold the substrate;

    a deposition chamber to house the substrate holder;

    a supply mechanism to supply the source gas to a surface of the substrate; and

    a heating device to heat the substrate held by the substrate holder;

    the deposition chamber including a substrate housing unit to house the substrate holder holding the substrate, and a passage housing unit which is formed by the slope of the upside of the deposition chamber and the substrate being connected to the substrate housing unit and constituting a passage to supply the source gas to the substrate, the passage having a cross-sectional area that is smaller than an area of a deposition plane of the substrate when the passage housing unit is cut in parallel with the deposition plane of the substrate, to thereby reduce an adiabatic expansion of the source gas to suppress a temperature decrease of the source gas.

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