Plasma generating apparatus and plasma processing apparatus

• US 20050173069A1
• Filed: 09/01/2004
• Published: 08/11/2005
• Est. Priority Date: 02/07/2004
• Status: Abandoned Application

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Ma, Dong-joon, Tolmachev, Yuri Nikolaevich, Navala, Sergiy Yakovlevich, Kim, Dae-il
• Application Number:
  US10/931,132
• Publication Number:
  US 20050173069A1
• Time in Patent Office: Days
• US Class Current: 156/345.360
• CPC Class Codes: H01J 37/32192 Microwave generated discharge H01J37/32357, H01J37/32366, H01J37/32394, H01J37/32403 take precedence
• CPC Class Codes: H01J 37/32247 Resonators

Abstract

Provided is a microwave plasma generating apparatus using a multiple open-ended cavity resonator, and a plasma processing apparatus including the microwave plasma generating apparatus. The plasma processing apparatus includes a container for forming a process chamber, a support unit that supports a material to be processed in the process chamber, a dielectric window formed on an upper part of the process chamber, a gas supply unit that inject a process gas into the process chamber, and a microwave supply unit that includes a plurality of resonators for supplying microwaves through the dielectric window.

Claims

1. A plasma processing apparatus comprising:

a container for forming a process chamber;

a support unit that supports a material to be processed in the process chamber;

a dielectric window formed on an upper part of the process chamber;

a gas supply unit that inject a process gas into the process chamber; and

a microwave supply unit that includes a plurality of open ended cavity resonators for supplying microwaves through the dielectric window.

2. The plasma processing apparatus of claim 1, wherein the gas supply unit comprises:

an upper gas supply unit mounted through the center of the dielectric window;

a first gas supply unit for supplying the process gas to a surface of the material to be processed at a predetermined angle; and

a second gas supply unit configured to have a radially uniform distribution of gas flux.

3. The plasma processing apparatus of claim 2, wherein gas flux through each of the gas supply units is independently controlled.

4. The plasma processing apparatus of claim 1, wherein the plurality of open-ended cavity resonators are open at portions contacting the dielectric window.

5. The plasma processing apparatus of claim 1, wherein the microwave supply unit comprises:

a microwave power source for generating microwaves;

a plurality of waveguides;

a coupler for distributing the microwaves generated by the microwave power source to the plurality of waveguides; and

a plurality of open ended cavity resonators connected to a plurality of waveguides, respectively.

6. The plasma processing apparatus of claim 5, wherein radial plasma uniformity in the process chamber can be improved by changing a ratio of microwave power transmitted to each of the waveguides.

7. The plasma processing apparatus of claim 5, wherein each of the waveguides are capable of rotation with respect to an axis of the process chamber.

8. The plasma processing apparatus of claim 5, wherein the plurality of waveguides are configured to be co-axial.

9. The plasma processing apparatus of claim 5, wherein adjacent waveguides share a common wall.

10. The plasma processing apparatus of claim 1, wherein the supporting means is able to move up and down to locate a substrate loaded on the supporting means at a level of optimum plasma uniformity.

11. A microwave supply unit comprising:

a microwave power source for generating microwaves;

a plurality of waveguides;

a coupler for distributing the microwaves generated by the microwave power source to the plurality of waveguides; and

a plurality of resonators.

12. The microwave supply unit of claim 11, wherein the coupler adjusts a ratio of microwave power transmitted to each of the waveguides.

13. The microwave supply unit of claim 11, wherein the waveguides are capable of rotation with respect to each other.

14. The microwave supply unit of claim 11, wherein portions of the plurality of open-ended cavity resonators opposite to the waveguides are open.

15. The microwave supply unit of claim 11, wherein the plurality of waveguides are configured co-axially.

16. The microwave supply unit of claim 11, wherein adjacent waveguides share a common wall.