Vertical GaN light emitting diode and method for manufacturing the same

• US 20050173692A1
• Filed: 06/24/2003
• Published: 08/11/2005
• Est. Priority Date: 12/27/2002
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electro-Mechanics Co., Ltd. (Samsung Group)
• Inventors: Yoo, Seung Jin, Hahm, Hun Joo, Park, Young Ho, Na, Jeong Seok
• Granted Patent: US 7,268,372 B2
• Time in Patent Office: Days
• US Class Current: 257/13
• CPC Class Codes: H01L 2221/68363 used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

Disclosed are a vertical GaN light emitting diode and a method for manufacturing the same. The vertical GaN light emitting diode comprises a first conductive GaN clad layer with an upper surface provided with a first contact formed thereon, an active layer formed on a lower surface of the first conductive GaN clad layer, a second conductive GaN clad layer formed on a lower surface of the active layer, a conductive adhesive layer formed on the second conductive GaN clad layer, and a conductive substrate, with a lower surface provided with a second contact formed thereon, formed on a lower surface of the conductive adhesive layer. The method for manufacturing the vertical GaN light emitting diodes comprises the step of removing the sapphire substrate from the light emitting structure so as to prevent the damages on a GaN single crystal plane of the structure.

Claims

1-4. -4. (canceled)

5. A GaN light emitting diode, comprising:

a first conductive GaN clad layer with an upper surface provided with a first contact formed thereon;

an active laser formed on a lower surface of the first conductive GaN clad layer;

a second conductive GaN clad layer formed on a lower surface of the active layer;

a conductive adhesive layer formed on the second conductive GaN clad layer; and

a conductive substrate, with a lower surface provided with a second contact formed thereon, formed on a lower surface of the conductive adhesive layer;

wherein the conductive adhesive layer is made of a material selected from the group consisting of Au—

Sn, Sn, In, Au—

Ag and Pb—

Sn.

18. The diode of claim 5, wherein the conductive adhesive layer is made of an Au—

Sn alloy.

19. The diode of claim 5, wherein the conductive adhesive layer is made of Sn.

20. The diode of claim 5, wherein the conductive adhesive layer is made of In.

21. The diode of claim 5, wherein the conductive adhesive layer is made of an Au—

Ag alloy.

22. The diode of claim 5, wherein the conductive adhesive layer is made of an Pb—

Sn alloy.

23. The diode of claim 5, wherein the conductive adhesive layer is a reflective layer made of a material selected from the group consisting of Au—

Sn, Sn, In, and Au—

Ag.

6-17. -17. (canceled)