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Active matrix of thin-film transistors (tft) for an optical sensors or display screen

  • US 20050173703A1
  • Filed: 06/28/2002
  • Published: 08/11/2005
  • Est. Priority Date: 06/29/2001
  • Status: Active Grant
First Claim
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1. An active matrix of thin-film transistors or TFTs for an optical sensor or display screen, comprising:

  • a substrate;

    a matrix of TFT transistors formed on this substrate, each transistor comprising a gate (4), a first electrode or drain (8) and a second electrode or source (9);

    a set of row electrodes placed on the substrate for controlling the TFT transistors via their gates;

    a conducting level in a defined pattern forming a matrix of pixel electrodes being connected to one of the electrodes of the transistors;

    a set of columns for transferring charges through the transistors between the pixel electrodes and drive electronics, the columns being connected to the other electrode of the transistors; and

    an insulating layer between the pixel electrodes and the columns, this insulating layer being open locally to each pixel in order to bring the pixel electrode into contact with the other electrode of the transistor;

    a set of capacitive electrodes lying at the same level as the electrodes of the transistors so as to form, with the pixel electrodes, storage capacitors.

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