Lighting system with high and improved extraction efficiency

• US 20050173714A1
• Filed: 07/16/2004
• Published: 08/11/2005
• Est. Priority Date: 02/06/2004
• Status: Abandoned Application

• Current Assignee: DiCon Fiber Optics Incorporated
• Original Assignee: DiCon Fiber Optics Incorporated
• Inventors: Lee, Ho-Shang, Birman, Alexander
• Application Number:
  US10/892,856
• Publication Number:
  US 20050173714A1
• Time in Patent Office: Days
• US Class Current: 257/84
• CPC Class Codes: H01L 2933/0083 Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction

Abstract

In an epitaxial structure of a solid state lighting system, electrical current injection into the active layer is used to excite the photon emission. The present invention employs a unique waveguide layer in the epitaxial structure for trapping the light generated by the active layer in the fundamental waveguide mode. Multiple photonic crystal regions with different characteristics located either outside or inside one or more current injection regions extract photons from the waveguide layer(s). The present invention creates solid state lighting with high optical output and high power efficiency.

Claims

1. A solid state light emitting device comprising:

an active layer emitting light in response to current injected into the layer;

a first structure adjacent to the active layer, said structure and said active layer trapping the light generated by the active layer; and

a second structure extracting the light that is trapped by the first structure, said second structure comprising a plurality of photonic crystal arrays with different parameters.

2. The device of claim 1, wherein two or more of the plurality of photonic crystal arrays have different orientations.

3. The device of claim 1, wherein two or more of the plurality of photonic crystal arrays have complementary orientations.

4. The device of claim 1, wherein two or more of the plurality of photonic crystal arrays have different lattice constants.

5. The device of claim 4, wherein two or more of the plurality of photonic crystal arrays have different orientations.

6. The device of claim 1, said second structure comprising three photonic crystal arrays with different parameters, wherein at least two of the three photonic crystal arrays have different orientations and at least two of the three photonic crystal arrays have different lattice constants.

7. The device of claim 1, wherein one of the plurality of photonic crystal arrays comprises elements and is arranged so that lines joining the elements of the one array form polygons or Archimedean-like tiles.

8. The device of claim 1, wherein each of at least some of the plurality of photonic crystal arrays comprises elements and is arranged so that lines joining the elements of such array form polygons or Archimedean-like tiles.

9. The device of claim 8, wherein each of said some of the plurality of groups of photonic crystal arrays includes a triangular, square or rectangular array.

10. The device of claim 8, wherein each of said some of the plurality of groups of photonic crystal arrays includes an equilateral triangular array.

11. The device of claim 10, wherein the equilateral triangular arrays of two of said some of the plurality of photonic crystal arrays are oriented so that their orientations are about 30 degrees rotated relative to each another.

12. The device of claim 1, said second structure comprising a plurality of arrays of an optical media or medium with one or more indices of refraction that are different from an adjoining optical medium.

13. The device of claim 12, wherein the optical media of at least two of said plurality of arrays have different indices of refraction.

14. The device of claim 12, said second structure comprising a plurality of arrays of holes in a layer adjacent to the active layer, in the first structure or in the active layer.

15. The device of claim 1, said device comprising an electrode injecting current to locations in the active layer or another layer near the active layer, said locations being located adjacent to said at least some of the plurality of photonic crystal arrays with different parameters.

16. The device of claim 15, wherein two or more of the plurality of photonic crystal arrays have different orientations.

17. The device of claim 15, wherein two or more of the plurality of photonic crystal arrays have complementary orientations.

18. The device of claim 15, wherein two or more of the plurality of photonic crystal arrays have different lattice constants.

19. The device of claim 18, wherein two or more of the plurality of photonic crystal arrays have different orientations.

20. The device of claim 15, wherein said locations are substantially surrounded by said at least some of the plurality of photonic crystal arrays with different parameters.

21. The device of claim 20, wherein said locations are substantially surrounded by a first region of photonic crystal arrays with a first parameter, wherein the first region is surrounded by at least a second region of photonic crystal arrays with a second parameter different from the first parameter.

22. The device of claim 15, wherein said plurality of arrays are distributed throughout the chip.

23. The device of claim 22, wherein said plurality of arrays are hexagonal in shape.

24. The device of claim 22, wherein said plurality of arrays are elongated in shape.

25. The device of claim 24, wherein said plurality of arrays are arranged in columns, where each of at least some of pairs of arrays with a first parameter in a column are separated by at least one array with a second parameter different from the first parameter.

26. The device of claim 1, further comprising a third structure that reflects light that is emitted from the active layer and that is not extracted when passing through the photonic crystal arrays back towards the arrays.

27. The device of claim 26, said third structure comprising a photonic crystal structure or a mirror surface.

28. The device of claim 26, said third structure surrounding the active layer and/or the first structure, so that light emitted by the active layer and not extracted by the photonic crystal arrays are reflected back towards such arrays.

29. The device of claim 1, wherein the first structure contains substantially a single optical mode or a few lower-order optical modes, and traps the light generated in the said optical mode(s).

30. The device of claim 1, wherein the first structure comprises at least one waveguide layer.

31. The device of claim 1, further comprising at least one conductive layer having a hexagonal shape injecting current to locations in the active layer or a layer near the active layer, at least one of the plurality of arrays forming a triangular pattern and surrounding said locations.

32. The device of claim 1, wherein the different parameters comprise two or more of the following:

array pattern, lattice constant, lattice orientation, size and index of refraction of array element.

33. A method for making a solid state light emitting device, comprising:

providing an semiconductor body, said body having an active layer that emits light when electrical current is injected into the layer, and at least another layer adjacent to the active layer;

forming at least one array of holes in said at least another layer to provide photonic crystal arrays; and

forming reflective structures each surrounding a portion of the active layer and some of the holes in the array.

34. The method of claim 33, wherein said reflective structures are formed by providing a resist layer on the body, developing a pattern of indentations onto the resist layer, and etching into the resist layer and the body to form trenches, depositing a light reflective layer onto surfaces of the trenches and removing the resist layer together with portions of the reflective layer attached to the resist layer.

35. A solid state light emitting device comprising a plurality of chips, each chip comprising:

an active layer emitting light in response to current injected into the layer;

a first structure adjacent to the active layer, said structure and said active layer trapping the light generated by the active layer; and

a second structure extracting the light that is trapped by the first structure, said second structure comprising a plurality of photonic crystal arrays with different parameters.

36. The device of claim 35, each of at least some of said plurality of chips comprising an electrode injecting current to locations in the portion of the active layer or another layer near the active layer in such chip, said locations being located adjacent to said at least some of the plurality of photonic crystal arrays with different parameters.

37. The device of claim 36, wherein said locations are substantially surrounded by said at least some of the plurality of photonic crystal arrays with different parameters.

38. The device of claim 37, wherein said locations are substantially surrounded by a first region of photonic crystal arrays with a first parameter, wherein the first region is surrounded by at least a second region of photonic crystal arrays with a second parameter different from the first parameter.

39. The device of claim 36, wherein said plurality of arrays are distributed throughout each of said at least some of said plurality of chips.

40. The device of claim 39, wherein said plurality of arrays in each of said at least some of said plurality of chips are hexagonal in shape.

41. The device of claim 39, wherein said plurality of arrays in each of said at least some of said plurality of chips are elongated in shape.

42. The device of claim 41, wherein said plurality of arrays in each of said at least some of said plurality of chips are arranged in columns, where each of at least some of pairs of arrays with a first parameter in such chip are separated by at least one array with a second parameter different from the first parameter.

43. The device of claim 35 wherein two or more of the plurality of photonic crystal arrays in each of said some of said plurality of chips have different orientations.

44. The device of claim 35, wherein two or more of the plurality of photonic crystal arrays have complementary orientations.

45. The device of claim 35, wherein two or more of the plurality of photonic crystal arrays in each of said some of said plurality of chips have different lattice constants.

46. The device of claim 45, wherein two or more of the plurality of photonic crystal arrays in each of said some of said plurality of chips have different orientations.

47. The device of claim 35, each of at least some of said plurality of chips further comprising a third structure that reflects light that is emitted from the active layer in such chip and that is not extracted when passing through the photonic crystal arrays in such chip back towards the arrays.

48. The device of claim 35, wherein at least two of said plurality of chips emit light of different wavelengths.

49. The device of claim 35, wherein said plurality of chips emit light within more than one of the red, yellow, green and blue wavelength ranges.