Semiconductor device and display comprising same

• US 20050173734A1
• Filed: 03/26/2003
• Published: 08/11/2005
• Est. Priority Date: 05/22/2002
• Status: Active Grant

• Current Assignee: Hideo Ohno, Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.), Masashi Kawasaki
• Original Assignee: Hideo Ohno, Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.), Masashi Kawasaki
• Inventors: Ochi, Hisao, Yoshioka, Hiroto, Sugihara, Toshinori, Kawasaki, Masashi, Hara, Takeshi, Ohno, Hideo, Fujita, Tatsuya
• Granted Patent: US 7,205,640 B2
• Time in Patent Office: Days
• US Class Current: 257/202
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

In an inverse-stagger MOSFET (1), a gate insulating layer (4) made of amorphous aluminum oxide is so formed as to face a channel layer (5) which serves as the semiconductor layer, and which is made of zinc oxide. With this arrangement, a defect level at an interface between the channel layer (5) and the gate insulating layer (4) is reduced, thereby obtaining performance equivalent to that of a semiconductor apparatus in which all the layered films are crystalline. This technique is applicable to a staggered MOSFET and the like, and has high versatility.

Claims

1. A semiconductor apparatus including a semiconductor layer that contains a group II oxide, comprising:

a layer made of amorphous aluminum oxide, on at least one surface of the semiconductor layer.

2. The semiconductor apparatus as set forth in claim 1, wherein:

the group II oxide is zinc oxide.

3. The semiconductor apparatus as set forth in claim 1, wherein:

the semiconductor layer is made of zinc oxide, and has a film thickness not less than 5 nm but not more than 100 nm.

4. The semiconductor apparatus as set forth in claim 1, wherein:

the amorphous aluminum oxide has resistance not less than 1×

10¹⁴ Ω

·

cm not more than 2×

10¹⁷ Ω

·

cm.

5. A display apparatus, comprising:

the semiconductor apparatus as set forth in claim 1.