Trench-gate semiconductor devices
First Claim
1. A trench-gate semiconductor device including:
- a semiconductor body (20) defining a trench (10) having an insulated gate (8) therein, the semiconductor body comprising a source region (2) and a drain region (4) of a first conductivity type which are separated by a channel-accommodating region (6) adjacent to the gate, the drain region comprising a drain drift region (4a) and a drain contact region (4b), with the drain drift region between the channel-accommodating region (6) and the drain contact region (4b), and the drain drift region (4a) doped to a lesser extent than the drain contact region (4b); and
an insulated field plate (24) in the trench (10) between the gate (8) and the drain contact region (4b), wherein the field plate (24) is for connection to a bias potential greater than the gate potential and near to the bulk breakdown voltage of the drain drift region (4a).
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Accused Products
Abstract
A trench-gate semiconductor device, for example a MOSFET or IGBT, includes a semiconductor body (20) having a drain region (4) comprising a drain drift region (4a) and a drain contact region (4b). An insulated field plate (24) is included in the trench (10) between the gate (8) and the drain contact region (4b), wherein the field plate (24) is for connection to a bias potential greater than the gate potential and near to the bulk breakdown voltage of the drain drift region (4a). The field plate (24) causes the potential drop across the drain drift region (4a) to be spread considerably more evenly, particularly at applied voltages greater than the bulk breakdown voltage, thereby substantially increasing the breakdown voltage of the device.
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Citations
12 Claims
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1. A trench-gate semiconductor device including:
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a semiconductor body (20) defining a trench (10) having an insulated gate (8) therein, the semiconductor body comprising a source region (2) and a drain region (4) of a first conductivity type which are separated by a channel-accommodating region (6) adjacent to the gate, the drain region comprising a drain drift region (4a) and a drain contact region (4b), with the drain drift region between the channel-accommodating region (6) and the drain contact region (4b), and the drain drift region (4a) doped to a lesser extent than the drain contact region (4b); and
an insulated field plate (24) in the trench (10) between the gate (8) and the drain contact region (4b), wherein the field plate (24) is for connection to a bias potential greater than the gate potential and near to the bulk breakdown voltage of the drain drift region (4a). - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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Specification