Semiconductor device

• US 20050174845A1
• Filed: 01/28/2005
• Published: 08/11/2005
• Est. Priority Date: 02/06/2004
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Koyama, Jun, Imai, Keitaro
• Granted Patent: US 7,699,232 B2
• Time in Patent Office: Days
• US Class Current: 365/185.40
• CPC Class Codes: G11C 17/16 using electrically-fusible links
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 27/13 combined with thin-film or thick-film passive components

Abstract

A semiconductor device which is used as an ID chip and capable of being rewritten data only one time. In addition, a semiconductor device used as an ID chip which is capable of being written data except when manufacturing the chip. The invention comprises a modulating circuit, a demodulating circuit, a logic circuit, a memory circuit, and an antenna circuit over an insulating substrate. The modulating circuit and the demodulating circuit are electrically connected to an antenna circuit, the demodulating circuit is connected to the logic circuit, the memory circuit stores an output signal of the logic circuit, and the memory circuit is a fuse memory circuit using a fuse element.

Claims

1. A semiconductor device, over an insulating substrate, comprising:

a modulating circuit;

a demodulating circuit;

a logic circuit;

a memory circuit; and

an antenna circuit,

wherein the modulating circuit and the demodulating circuit are electrically connected to the antenna circuit;

wherein the demodulating circuit is connected to the logic circuit;

wherein the memory circuit has a function of storing an output signal of the logic circuit; and

wherein the memory circuit is a fuse memory circuit using a fuse element.

2. The semiconductor device according to claim 1, wherein the fuse memory circuit comprises a control circuit for being written data only one time.

4. The semiconductor device according to claim 1, wherein the fuse element carries out a storage operation by blowing a metal wiring.

6. The semiconductor device according to claim 1, wherein the fuse element carries out a storage operation by blowing a semiconductor thin film.

8. The semiconductor device according to claim 1, wherein the fuse element carries out a storage operation by short-circuiting an insulating film.

10. The semiconductor device according to claim 1, wherein a power for carrying out a storage operation by the fuse memory circuit is obtained by rectifying a signal output from the antenna circuit and boosting a voltage of the signal output from the antenna circuit.

12. The semiconductor device according to claim 1, wherein a power for carrying out a storage operation by the fuse memory circuit is obtained with an external high voltage power source.

14. The semiconductor device according to claim 1, wherein at least one of the modulating circuit, the demodulating circuit, the logic circuit, and the memory circuit is configured by a thin film transistor.

16. The semiconductor device according to claim 1, wherein the antenna circuit, the modulating circuit, the demodulating circuit, the logic circuit, and the memory circuit are integrally formed over the same insulating substrate.

18. The semiconductor device according to claim 1, wherein the modulating circuit, the demodulating circuit, the logic circuit, and the memory circuit are integrally formed over the same insulating substrate and the antenna circuit is formed over another insulating substrate.

20. The semiconductor device according to claim 1, wherein the insulating substrate is a glass.

22. The semiconductor device according to claim 1, wherein the insulating substrate is a plastic.

24. The semiconductor device according to claim 1, wherein the insulating substrate is a film insulator.

26. The semiconductor device according to claim 1, wherein the antenna circuit is formed over at least one of the modulating circuit, the demodulating circuit, the logic circuit, and the memory circuit.

28. The semiconductor device according to claim 1, wherein a signal input to the antenna circuit is a radio frequency signal.

30. An IC card, an IC tag, an RFID, a transponder, a paper money, a valuable instrument, a passport, electronic equipment, a bag, and clothing each comprising the semiconductor device according to claim 1.

3. A semiconductor device, over an insulating substrate, comprising:

a modulating circuit;

a demodulating circuit;

a logic circuit;

a memory circuit; and

an antenna circuit,

wherein the modulating circuit and the demodulating circuit are electrically connected to the antenna circuit;

wherein the demodulating circuit is connected to the logic circuit;

wherein the memory circuit has a function of storing an output signal of the logic circuit;

wherein the memory circuit is a fuse memory circuit using a fuse element; and

wherein the logic circuit controls whether writing of the memory circuit is possible or not depending on data stored in the memory circuit.

5. The semiconductor device according to claim 3, wherein the fuse element carries out a storage operation by blowing a metal wiring.

7. The semiconductor device according to claim 3, wherein the fuse element carries out a storage operation by blowing a semiconductor thin film.

9. The semiconductor device according to claim 3, wherein the fuse element carries out a storage operation by short-circuiting an insulating film.

11. The semiconductor device according to claim 3, wherein a power for carrying out a storage operation by the fuse memory circuit is obtained by rectifying a signal output from the antenna circuit and boosting a voltage of the signal output from the antenna circuit.

13. The semiconductor device according to claim 3, wherein a power for carrying out a storage operation by the fuse memory circuit is obtained with an external high voltage power source.

15. The semiconductor device according to claim 3, wherein at least one of the modulating circuit, the demodulating circuit, the logic circuit, and the memory circuit is configured by a thin film transistor.

17. The semiconductor device according to claim 3, wherein the antenna circuit, the modulating circuit, the demodulating circuit, the logic circuit, and the memory circuit are integrally formed over the same insulating substrate.

19. The semiconductor device according to claim 3, wherein the modulating circuit, the demodulating circuit, the logic circuit, and the memory circuit are integrally formed over the same insulating substrate and the antenna circuit is formed over another insulating substrate.

21. The semiconductor device according to claim 3, wherein the insulating substrate is a glass.

23. The semiconductor device according to claim 3, wherein the insulating substrate is a plastic.

25. The semiconductor device according to claim 3, wherein the insulating substrate is a film insulator.

27. The semiconductor device according to claim 3, wherein the antenna circuit is formed over at least one of the modulating circuit, the demodulating circuit, the logic circuit, and the memory circuit.

29. The semiconductor device according to claim 3, wherein a signal input to the antenna circuit is a radio frequency signal.

31. An IC card, an IC tag, an RFID, a transponder, a paper money, a valuable instrument, a passport, electronic equipment, a bag, and clothing each comprising the semiconductor device according to claim 3.

32. A semiconductor device, over an insulating substrate, comprising:

a modulating circuit;

a demodulating circuit;

a logic circuit;

a memory circuit; and

an antenna circuit,

wherein the modulating circuit and the demodulating circuit are electrically connected to the antenna circuit;

wherein the demodulating circuit is connected to the logic circuit;

wherein the memory circuit has a function of storing an output signal of the logic circuit; and

wherein the memory circuit is capable of being rewritten data only one time.