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Method for energy-assisted atomic layer deposition and removal

  • US 20050175789A1
  • Filed: 06/23/2003
  • Published: 08/11/2005
  • Est. Priority Date: 06/23/2002
  • Status: Abandoned Application
First Claim
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1. A method of depositing a film on a substrate in a reaction chamber, comprising:

  • introducing a first gas into the reaction chamber;

    initiating a first pulse of electromagnetic irradiation to form radicals species from said first gas, where the radical species react with the surface of the substrate to form a radical terminated surface on the substrate;

    purging the reaction chamber;

    introducing a second gas into the reactor; and

    initiating a second pulse of electromagnetic irradiation to form second radicals species from said second gas, where the second radical species react with the radical terminated surface to form a layer of film on the substrate.

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