Film forming method and film forming apparatus

• US 20050178328A1
• Filed: 02/02/2005
• Published: 08/18/2005
• Est. Priority Date: 02/17/2004
• Status: Abandoned Application

• Current Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Original Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Inventors: Tanaka, Tomoya, Takamori, Yoshinori, Imamura, Hiroki
• Application Number:
  US11/047,655
• Publication Number:
  US 20050178328A1
• Time in Patent Office: Days
• US Class Current: 118/719
• CPC Class Codes: H01L 21/67201 characterized by the construction of the load-lock chamber
• CPC Class Codes: H01L 21/67207 comprising a chamber adapted to a particular process

Abstract

The object of the present invention is provide a film forming method and a film forming apparatus for suppressing mixing of an organic type foreign material into a film forming chamber when forming a film, thereby reducing a defect density after a film formation. In order to achieve the object, the film forming apparatus comprises a load lock for placing a cassette for holding a wafer, a film forming chamber for forming a thin film on the wafer, and an arm for conveying the wafer from the load lock to the film forming chamber, wherein a mass spectrograph for measuring a partial pressure of an organic substance under an atmosphere in the load lock is placed in the load lock. In the film forming method, an atmosphere in the load lock in which a cassette holding the wafer is placed is firstly exhausted. In this exhaust, the exhaust is performed until a partial pressure of the organic substance under the atmosphere in the load lock reaches 7.5×10⁻⁵ mTorr or less. The wafer is conveyed to a film forming chamber for a desired thin film to be formed.

Claims

1. A film forming method, including the steps of:

(a) exhausting an atmosphere in a load lock in which a cassette for holding a wafer is placed;

(b) conveying said wafer into a film forming chamber after said step (a); and

(c) forming a thin film on said wafer after said step (b)

wherein at said step (a), exhaust is performed until a partial pressure of an organic substance under an atmosphere in the load lock reaches a partial pressure of the organic substance when exhaust is performed in a state where said cassette is not contained in said load lock.

2. The film forming method according to claim 1, wherein the partial pressure of the organic substance when the exhaust is performed in the state where said cassette is not contained is 7.5×

10<sup>−

5</sup> mTorr or less.

3. The film forming method according to claim 1, wherein a composition of said organic substance includes at least one of an annular siloxane (D3, D7, D8, D9, D11, D12), a 2-ethyl-1-hexanol, an isopropenyl acetophenone, a glycol ester, and a Di-n-butyl phthalate (DBP).

7. The film forming apparatus according to claim 3, wherein a composition of said organic substance includes at least one of an annular siloxane (D3, D7, D8, D9, D11, D12), a 2-ethyl-1-hexanol, an isopropenyl acetophenone, a glycol ester, and a Di-n-butyl phthalate (DBP).

8. The film forming method according to claim 2, wherein a composition of said organic substance includes at least one of an annular siloxane (D3, D7, D8, D9, D11, D12), a 2-ethyl-1-hexanol, an isopropenyl acetophenone, a glycol ester, and a Di-n-butyl phthalate (DBP).

10. The film forming apparatus according to claim 8, wherein a composition of said organic substance includes at least one of an annular siloxane (D3, D7, D8, D9, D11, D12), a 2-ethyl-1-hexanol, an isopropenyl acetophenone, a glycol ester, and a Di-n-butyl phthalate (DBP).

4. A film forming apparatus, comprising:

a load lock for placing a cassette for holding a wafer;

a film forming chamber for forming a thin film on said wafer; and

an arm for conveying said wafer from said load lock to said film forming chamber,

wherein a mass spectrograph for measuring a partial pressure of an organic substance under an atmosphere in said load lock is placed in said load lock.

5. The film forming apparatus according to claim 4, wherein said load lock is designed to be able to perform evacuation until the partial pressure of the organic substance measured by said mass spectrograph reaches 7.5×

10<sup>−

5</sup> mTorr or less.

6. The film forming apparatus according to claim 4, wherein said cassette is composed of a metallic material.

9. The film forming apparatus according to claim 5, wherein said cassette is composed of a metallic material.

11. The film forming apparatus according to claim 4, wherein a composition of said organic substance includes at least one of an annular siloxane (D3, D7, D8, D9, D11, D12), a 2-ethyl-1-hexanol, an isopropenyl acetophenone, a glycol ester, and a Di-n-butyl phthalate (DBP).

12. The film forming apparatus according to claim 5, wherein a composition of said organic substance includes at least one of an annular siloxane (D3, D7, D8, D9, D11, D12), a 2-ethyl-1-hexanol, an isopropenyl acetophenone, a glycol ester, and a Di-n-butyl phthalate (DBP).