Plasma reactor overhead source power electrode with low arcing tendency, cylindrical gas outlets and shaped surface

• US 20050178748A1
• Filed: 01/28/2005
• Published: 08/18/2005
• Est. Priority Date: 03/17/2000
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Horioka, Keiji, Hoffman, Daniel J., Buchberger, Douglas A. Jr., Carducci, James, Yang, Jang Gyoo, Regelman, Olga
• Granted Patent: US 7,196,283 B2
• Time in Patent Office: Days
• US Class Current: 219/121.480
• CPC Class Codes: H01J 37/32082 Radio frequency generated discharge H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence
• CPC Class Codes: H01J 37/32091 the radio frequency energy being capacitively coupled to the plasma
• CPC Class Codes: H01J 37/32174 Circuits specially adapted for controlling the RF discharge
• CPC Class Codes: H01J 37/32183 Matching circuits
• CPC Class Codes: H01J 37/3244 Gas supply means

Abstract

An overhead gas distribution electrode forming at least a portion of the ceiling of a plasma reactor has a bottom surface facing a processing zone of the reactor. The electrode includes a gas supply manifold for receiving process gas at a supply pressure at a top portion of the electrode and plural pressure-dropping cylindrical orifices extending axially relative to the electrode from the gas supply manifold at one end of each the orifice. A radial gas distribution manifold within the electrode extends radially across the electrode. Plural axially extending high conductance gas flow passages couple the opposite ends of respective ones of the plural pressure-dropping orifices to the radial gas distribution manifold. Plural high conductance cylindrical gas outlet holes are formed in the plasma-facing bottom surface of the electrode and extend axially to the radial gas distribution manifold.

Claims

1. In a plasma reactor for processing a workpiece on a support pedestal in a vacuum chamber of the reactor, a radially extending gas distribution electrode forming at least a portion of the ceiling of the reactor, the electrode being an RF plasma source power applicator of the reactor and having a bottom surface facing a processing zone of the reactor, the electrode comprising:

a gas supply manifold for receiving process gas at a supply pressure at a top portion of said electrode;

plural pressure-dropping cylindrical orifices extending axially relative to said electrode from said gas supply manifold at one end of each orifice;

a radial gas distribution manifold within said electrode extending radially across said electrode;

plural axially extending high conductance gas flow passages coupling the opposite ends of respective ones of said plural pressure-dropping orifices to said radial gas distribution manifold; and

plural high conductance cylindrical gas outlet holes formed in said bottom surface of said electrode and extending axially to said radial gas distribution manifold.

2. The electrode of claim 1 wherein the bottom surface of the electrode is a non-planar surface comprising one of:

(a) a curved surface;

(b) a stepped surface.

3. The electrode of claim 2 wherein the non-planar bottom surface is a center-high surface.

4. The electrode of claim 3 wherein the non-planar bottom surface has a center-to-edge height difference that is between about 20% and 100% of the diameter of the electrode.

5. The electrode of claim 3 further comprising a protective layer covering the bottom surface, the protective layer being formed of a process-compatible material, the gas outlet holes continuing through the protective layer.

6. The electrode of claim 5 wherein the protective layer comprises a semiconductor-containing material.

7. The electrode of claim 6 wherein the semiconductor-containing material comprises silicon carbide.

8. The electrode of claim 6 wherein the semiconductor-containing material comprises at least one of:

(a) silicon,

(b) carbon,

(c) germanium.

9. The electrode of claim 1 wherein the plural pressure-dropping orifices are on the order of one fifth the diameter of the gas outlet passages.

10. The electrode of claim 9 wherein the pressure-dropping orifices are on the order of 10 mil in diameter.

11. The electrode of claim 1 wherein the high conductance gas flow passages have an axial length defining a minimum axial displacement of the pressure-dropping orifices above the bottom surface.

12. The electrode of claim 11 wherein the minimum displacement is sufficient to prevent arcing or plasma breakdown within the pressure-dropping orifices.

13. The electrode of claim 11 wherein the minimum displacement is sufficient to maintain a radial electrical within each orifice sufficiently low whereby the combination of gas pressure and radial field values within the orifice are insufficient for plasma breakdown.

14. The electrode of claim 1 wherein the high conductance gas flow passages have an axial length on the order of about 70 mm.

15. The electrode of claim 1 wherein the pressure-dropping orifices have a sufficiently small gas conductance and the gas outlet holes have a sufficiently high gas conductance so that the pressure drop through each of the pressure-dropping orifices is at least 80% of the pressure difference between the supply pressure and the vacuum chamber.

16. The electrode of claim 15 wherein the pressure-dropping orifices are sufficiently displaced axially from the bottom surface so that the radial electric field in the pressure-dropping orifices is less than 10% of the maximum radial electric field in the gas outlet holes.

17. The electrode of claim 1 wherein the bottom surface comprises a center-high curved surface having a flat annular periphery.

18. A gas distribution metallic electrode of a plasma reactor, the electrode having a bottom surface facing a low pressure processing zone of the reactor, the electrode comprising:

plural pressure-dropping cylindrical orifices extending axially relative to the electrode and coupled to receive process gas at a supply pressure at one end of each orifice; and

plural axially extending high conductance cylindrical gas outlet holes formed in the bottom surface and coupled to a low pressure side of the pressure dropping orifices.

19. The electrode of claim 18 wherein the bottom surface of the electrode is a non-planar surface comprising one of:

(a) a curved surface;

(b) a stepped surface.

20. The electrode of claim 19 wherein the non-planar bottom surface is a center-high surface.

21. The electrode of claim 20 wherein the non-planar bottom surface has a center-to-edge height difference that is between about 20% and 100% of the diameter of the electrode.

22. The electrode of claim 21 further comprising a protective layer covering the bottom surface, the protective layer being formed of a process-compatible material, the gas outlet holes continuing through the protective layer.

23. The electrode of claim 22 wherein the protective layer comprises a semiconductor-containing material.

24. The electrode of claim 23 wherein the semiconductor-containing material comprises silicon carbide.

25. The electrode of claim 23 wherein the semiconductor-containing material comprises at least one of:

(a) silicon,

(b) carbon,

(c) germanium.

26. The electrode of claim 18 wherein the plural pressure-dropping orifices are on the order of one fifth the diameter of the gas outlet passages.

27. The electrode of claim 26 wherein the pressure-dropping orifices are on the order of 10 mil in diameter.

28. The electrode of claim 18 wherein the pressure-dropping orifices are located sufficiently far from the bottom surface to have a reduced radial electric field relative to the bottom surface, and the pressure-dropping orifices are sufficiently narrow to restrict pressure in the gas outlet holes to a pressure at or near a vacuum pressure of the chamber.

29. The electrode of claim 28 wherein the reduced radial electric field is sufficiently small to prevent arcing or plasma breakdown within the pressure-dropping orifices.

30. The electrode of claim 18 wherein the pressure-dropping orifices have a sufficiently small gas conductance and the gas outlet holes have a sufficiently high gas conductance so that the pressure drop through each of the pressure-dropping orifices is at least 80% of the pressure difference between the supply pressure and the vacuum chamber.

31. The electrode of claim 30 wherein the pressure-dropping orifices are sufficiently displaced axially from the bottom surface so that the radial electric field in the pressure-dropping orifices is less than 10% of the maximum radial electric field in the gas outlet holes.

32. The electrode of claim 18 wherein the bottom surface comprises a center-high curved surface having a flat annular periphery.

46. The electrode of claim 26 wherein the pressure-dropping orifices are on the order of 10 mil in diameter.

33. A plasma reactor comprising:

a vacuum chamber;

gas distribution metallic electrode forming a ceiling of the chamber and having an electrode reactance, the electrode having a bottom surface facing a low pressure processing zone of the reactor, the electrode comprising;

plural pressure-dropping cylindrical orifices extending axially relative to the electrode and coupled to receive process gas at a supply pressure at one end of each orifice;

plural axially extending high conductance cylindrical gas outlet holes formed in the bottom surface and coupled to a low pressure side of the pressure dropping orifices;

a VHF source power generator and a fixed impedance match element coupling the generator to the electrode; and

the VHF electrode having a reactance that forms a resonance with plasma in the chamber at a plasma resonant frequency that is the same as or nearly the same as the frequency of the VHF source power generator.

34. The reactor of claim 33 wherein the fixed impedance match element has a resonant frequency that is the same as or nearly the same as the resonant frequency.

35. The reactor of claim 34 wherein the fixed impedance match element comprises a tuning stub.

36. The reactor of claim 34 wherein the fixed impedance match element comprises a strip line circuit.

37. The reactor of claim 34 wherein the resonant frequency of the fixed impedance match element and the frequency of the VHF source power generator are offset from the plasma resonant frequency.

38. The electrode of claim 33 wherein the bottom surface of the electrode is a non-planar surface comprising one of:

(a) a curved surface;

(b) a stepped surface.

39. The electrode of claim 38 wherein the non-planar bottom surface is a center-high surface.

40. The electrode of claim 39 wherein the non-planar bottom surface has a center-to-edge height difference that is between about 20% and 100% of the diameter of the electrode.

41. The electrode of claim 33 further comprising a protective layer covering the bottom surface, the protective layer being formed of a process-compatible material, the gas outlet holes continuing through the protective layer.

42. The electrode of claim 41 wherein the protective layer comprises a semiconductor-containing material.

43. The electrode of claim 42 wherein the semiconductor-containing material comprises silicon carbide.

44. The electrode of claim 42 wherein the semiconductor-containing material comprises at least one of:

(a) silicon,

(b) carbon,

(c) germanium.

45. The electrode of claim 33 wherein the plural pressure-dropping orifices are on the order of one fifth the diameter of the gas outlet passages.

47. The electrode of claim 33 wherein the pressure-dropping orifices are located sufficiently far from the bottom surface to have a reduced radial electric field relative to the bottom surface, and the pressure-dropping orifices are sufficiently narrow to restrict pressure in the gas outlet holes to a pressure at or near a vacuum pressure of the chamber.

48. The electrode of claim 47 wherein the reduced radial electric field is sufficiently small to prevent arcing or plasma breakdown within the pressure-dropping orifices.