Semiconductor device and manufacturing method of the same
First Claim
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1. A semiconductor device, comprising:
- a semiconductor substrate;
gate electrodes formed above said semiconductor substrate;
a pair of impurity diffusion layers formed in a surface layer of said semiconductor substrate at both sides of each of said gate electrodes; and
drift layers formed in the surface layer of said semiconductor substrate between said gate electrodes and one of said impurity diffusion layers as a same conduction type as said impurity diffusion layers, wherein said gate electrodes are each formed in an overhang shape with metal including aluminum as a material.
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Abstract
Substitution reaction between polysilicon and Al (aluminum) is utilized. Namely, polysilicon films are formed by patterning at first as in the related art, and after an Al film is formed on an interlayer insulating film to be in contact with the polysilicon films, the polysilicon films in the interlayer insulating film 9 are replaced with Al by heat treatment. By patterning, gate electrodes constituted of Al low in gate parasite resistance and high in mobility is formed.
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Citations
11 Claims
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1. A semiconductor device, comprising:
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a semiconductor substrate;
gate electrodes formed above said semiconductor substrate;
a pair of impurity diffusion layers formed in a surface layer of said semiconductor substrate at both sides of each of said gate electrodes; and
drift layers formed in the surface layer of said semiconductor substrate between said gate electrodes and one of said impurity diffusion layers as a same conduction type as said impurity diffusion layers, wherein said gate electrodes are each formed in an overhang shape with metal including aluminum as a material. - View Dependent Claims (2, 3, 4, 5)
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6. A manufacturing method of a semiconductor device, comprising the steps of:
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forming polysilicon films each in an electrode shape via a gate insulating film on a semiconductor substrate;
introducing an impurity into a surface layer of the semiconductor substrate and forming a pair of impurity diffusion layers, and drift layers, respectively;
forming an interlayer insulating film above the semiconductor substrate to cover the polysilicon films;
exposing top surfaces of the polysilicon films by removing a surface layer of the interlayer insulating film;
forming openings in the interlayer insulating film to expose a part of a surface of each of the impurity diffusion layers;
forming a metallic film including aluminum on the interlayer insulating film to fill each of the openings;
selectively performing substitution reaction of polysilicon and aluminum and charging regions of formation of the polysilicon films in the interlayer insulating film with the material of the metallic film; and
forming a pair of electrodes connected to the respective impurity diffusion layers and gate electrodes integrally formed of the material of the metallic film by working the metallic film. - View Dependent Claims (7, 8, 9, 10, 11)
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Specification