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Semiconductor device and manufacturing method of the same

  • US 20050179085A1
  • Filed: 07/29/2004
  • Published: 08/18/2005
  • Est. Priority Date: 02/13/2004
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a semiconductor substrate;

    gate electrodes formed above said semiconductor substrate;

    a pair of impurity diffusion layers formed in a surface layer of said semiconductor substrate at both sides of each of said gate electrodes; and

    drift layers formed in the surface layer of said semiconductor substrate between said gate electrodes and one of said impurity diffusion layers as a same conduction type as said impurity diffusion layers, wherein said gate electrodes are each formed in an overhang shape with metal including aluminum as a material.

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