Apparatus for fabricating surface emitting semiconductor laser
First Claim
1. An apparatus for fabricating a surface emitting semiconductor laser comprising:
- a projection part projecting light onto an area including at least two kinds of monitor-use mesas respectively including III-V semiconductor layers that contain Al and have side surfaces exposed, when the side surfaces and a side surface of a III-V semiconductor layer of a laser-use mesa that contains Al and a side surface exposed are oxidized;
a photoelectric conversion part converting reflected lights from the monitor-use mesas into electrical signals;
an oxidization terminating time estimation part that detects times when the III-V semiconductor layers of the two kinds of monitor-use mesas are totally oxidized on the basis of the electrical signals, and estimates an oxidization terminating time when oxidization of the III-V semiconductor layer of the laser-use mesa should be terminated; and
an oxidization control part causing oxidization of the III-V semiconductor layer of the laser-use mesa to be terminated at the oxidization terminating time to thus define a current confinement layer in the laser-use mesa.
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Abstract
A method of fabricating a surface emitting semiconductor laser includes a first step of forming, on a substrate, multiple monitor-use semiconductor layers having stripes radiating from a center of the substrate, and a laser portion that includes semiconductor layers and is located on the periphery of the multiple monitor-use semiconductor layers, a second step of monitoring oxidized conditions on the multiple monitor-use semiconductor layers when a selectively oxidized region is formed in the laser portion, and a third step of controlling oxidization of the selectively oxidized region on the basis of the oxidized conditions thus monitored.
11 Citations
4 Claims
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1. An apparatus for fabricating a surface emitting semiconductor laser comprising:
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a projection part projecting light onto an area including at least two kinds of monitor-use mesas respectively including III-V semiconductor layers that contain Al and have side surfaces exposed, when the side surfaces and a side surface of a III-V semiconductor layer of a laser-use mesa that contains Al and a side surface exposed are oxidized;
a photoelectric conversion part converting reflected lights from the monitor-use mesas into electrical signals;
an oxidization terminating time estimation part that detects times when the III-V semiconductor layers of the two kinds of monitor-use mesas are totally oxidized on the basis of the electrical signals, and estimates an oxidization terminating time when oxidization of the III-V semiconductor layer of the laser-use mesa should be terminated; and
an oxidization control part causing oxidization of the III-V semiconductor layer of the laser-use mesa to be terminated at the oxidization terminating time to thus define a current confinement layer in the laser-use mesa. - View Dependent Claims (2, 3, 4)
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Specification